Philips PMEG2010EA User Guide [en, ca]

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DISCRETE SEMICONDUCTORS
DATA SH EET
PMEG2010EA
Low V
F
diode
Product specification Supersedes data of 2002 Dec 10
2004 Feb 06
Page 2
Philips Semiconductors Product specification
Low VF (MEGA) Schottky barrier diode
FEATURES
• Forward current: 1 A
• Reverse voltage: 20 V
• Ultra high-speed switching
• Very low forward voltage
• Very small plastic SMD package.
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
• Protection circuits.
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stressprotection,encapsulatedin aSOD323 (SC-76)very small SMD plastic package.
PMEG2010EA
PINNING
PIN DESCRIPTION
1 cathode 2 anode
lumns
Marking code: E1. The marking bar indicates the cathode.
Fig.1 Simplified outline (SOD323; SC-76) and
12
MGU328
symbol.
ORDERING INFORMATION
TYPE
NUMBER
NAME DESCRIPTION VERSION
PACKAGE
PMEG2010EA − plastic surface mounted package; 2 leads SOD323
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V I
F
I
FSM
R
continuous reverse voltage − 20 V continuous forward current − 1A non-repetitive peak forward current tp= 8.3 ms half sinewave;
− 5A
JEDEC method
T
stg
T
j
T
amb
storage temperature −65 +150 °C junction temperature − 125 °C operating ambient temperature −65 +125 °C
2004 Feb 06 2
Page 3
Philips Semiconductors Product specification
Low VF (MEGA) Schottky barrier diode
PMEG2010EA
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
F
continuous forward voltage see Fig.2; note 1
= 10 mA 240 270 mV
I
F
IF= 100 mA 300 350 mV I
= 1000 mA 480 550 mV
F
I
R
continuous reverse current see Fig.3; note 1
VR=5V 5 10 µA VR=8V 7 20 µA VR= 15 V 10 50 µA
C
d
diode capacitance VR= 5 V; f = 1 MHz; see Fig.4 19 25 pF
Note
1. Pulsed test: t
= 300 µs; δ = 0.02.
p
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 220 K/W
note 2 180 K/W
Notes
1. Device mounted on an FR4 printed-circuit board with Cu clad 10 x 10 mm.
2. Device mounted on an FR4 printed-circuit board with Cu clad 40 x 40 mm.
2004 Feb 06 3
Page 4
Philips Semiconductors Product specification
Low VF (MEGA) Schottky barrier diode
GRAPHICAL DATA
VF (V)
MHC311
0.60.20 0.4
3
10
handbook, halfpage
I
F
(mA)
2
10
10
1
−1
10
(1) T (2) T (3) T
amb amb amb
= 125°C. =85°C. =25°C.
(1) (2) (3)
5
10
handbook, halfpage
I
R
(µA)
4
10
3
10
2
10
10
1
(1) T (2) T (3) T
amb amb amb
= 125 °C. =85°C. =25°C.
PMEG2010EA
MHC312
(1)
(2)
(3)
20
VR (V)
250 51015
Fig.2 Forward current as a function of forward
voltage; typical values.
15
MHC313
VR (V)
80
handbook, halfpage
C
d
(pF)
60
40
20
0
05
T
=25°C; f = 1 MHz.
amb
10 20
Fig.3 Reverse current as a function of reverse
voltage; typical values.
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
2004 Feb 06 4
Page 5
Philips Semiconductors Product specification
Low VF (MEGA) Schottky barrier diode
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
D
H
D
A
X
M
vA
PMEG2010EA
SOD323
E
(1)
01
DIMENSIONS (mm are the original dimensions)
A
1.1
0.8
1
b
A
max
c D E H
p
0.40
0.25
1.8
0.25
0.10
IEC JEDEC JEITA
1.6
1.35
1.15
D
2.7
2.3
REFERENCES
UNIT
mm 0.05
Note
1. The marking bar indicates the cathode
OUTLINE
VERSION
SOD323 SC-76
21
L
0.45
0.15
Q
b
p
scale
Q
0.25
0.15
v
0.2
p
A
A
2 mm
1
L
detail X
EUROPEAN
PROJECTION
p
c
ISSUE DATE
99-09-13 03-12-17
2004 Feb 06 5
Page 6
Philips Semiconductors Product specification
Low VF (MEGA) Schottky barrier diode
DATA SHEET STATUS
LEVEL
I Objective data Development This data sheet contains data from the objective specification for product
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
III Product data Production This data sheet contains data from the product specification. Philips
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
3. For datasheets describing multipletype numbers,the highest-level productstatus determines thedata sheetstatus.
DATA SHEET
STATUS
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
(1)
PRODUCT
STATUS
(2)(3)
development. Philips Semiconductors reserves the right to change the specification in any manner without notice.
Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product.
Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
DEFINITION
PMEG2010EA
DEFINITIONS Short-form specification The data in a short-form
specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.
Limiting valuesdefinition  Limitingvalues givenarein accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device atthese orat anyother conditionsabovethose givenin the Characteristics sectionsof the specification isnot implied. Exposure to limiting values for extended periods may affect device reliability.
Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make norepresentation orwarrantythatsuchapplications willbe suitable for the specified use without further testing or modification.
DISCLAIMERS Life support applications These products are not
designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably beexpected toresult inpersonal injury.Philips Semiconductorscustomers usingorselling theseproducts for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes  Philips Semiconductors reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design and/or performance.When theproduct is infull production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductorsassumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2004 Feb 06 6
Page 7
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Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected].
© Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not formpart ofany quotation or contract, is believed to be accurateand reliableand may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands R76/02/pp7 Date of release: 2004 Feb 06 Document order number: 9397 750 12626
SCA76
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