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M3D319
PMEG2005EB
Low V
MEGA Schottky barrier
F
diode
Product specification
Supersedes data of 2003 Feb 20
2003 Apr 04
Philips Semiconductors Product specification
Low VF MEGA Schottky barrier diode
FEATURES
• Forward current: 0.5 A
• Reverse voltage: 20 V
• Very low forward voltage
• Guard ring protected
• Ultra small SMD package.
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Low current rectification
• Low power consumption applications (e.g. handheld
devices).
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier diode, encapsulated in a SOD523
(SC-79) ultra small SMD plastic package.
PMEG2005EB
PINNING
PIN DESCRIPTION
1 cathode
2 anode
handbook, halfpage
Marking code: L5.
The marking bar indicates the cathode.
Fig.1 Simplified outline (SOD523; SC-79) and
ka
Top view
MAM403
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
I
F
I
FRM
I
FSM
T
stg
T
j
T
amb
continuous reverse voltage − 20 V
continuous forward current − 500 mA
repetitive peak forward current tp= 1 ms; δ≤0.25 − 3.5 A
non-repetitive peak forward current t = 8 ms square wave − 6A
storage temperature −65 +150 °C
junction temperature − 125 °C
operating ambient temperature −65 +125 °C
2003 Apr 04 2
Philips Semiconductors Product specification
Low VF MEGA Schottky barrier diode
PMEG2005EB
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
F
I
R
C
d
continuous forward voltage see Fig.2
I
= 0.1 mA 120 180 mV
F
I
= 1 mA 180 240 mV
F
= 10 mA 245 290 mV
I
F
I
= 100 mA 320 380 mV
F
= 500 mA 430 480 mV
I
F
continuous reverse current VR= 10 V; see Fig.3; note 1 7 30 µA
diode capacitance VR= 1 V; f = 1 MHz; see Fig.4 24 30 pF
Note
1. Pulsed test: t
= 300 µs; δ = 0.02.
p
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
note 1 400 K/W
ambient
Note
1. Refer to SOD523 (SC-79) standard mounting conditions.
2003 Apr 04 3
Philips Semiconductors Product specification
Low VF MEGA Schottky barrier diode
GRAPHICAL DATA
3
10
handbook, halfpage
I
F
(mA)
2
10
10
1
−1
10
−2
10
(1) T
(2) T
(3) T
amb
amb
amb
= 125°C.
=85°C.
=25°C.
(1) (3)(2)
0.1 0.2 0.3 0.4
MHC456
VF (V)
0.50
4
10
handbook, halfpage
I
R
(µA)
3
10
2
10
10
1
(1) T
(2) T
(3) T
amb
amb
amb
= 125 °C.
=85°C.
=25°C.
PMEG2005EB
MHC457
(1)
(2)
(3)
VR (V)
3020100
Fig.2 Forward current as a function of forward
voltage; typical values.
50
handbook, halfpage
C
d
(pF)
40
30
20
10
0
0
f = 1 MHz; T
510 20
=25°C.
amb
MHC458
15
VR (V)
Fig.3 Reverse current as a function of reverse
voltage; typical values.
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
2003 Apr 04 4
Philips Semiconductors Product specification
Low VF MEGA Schottky barrier diode
PMEG2005EB
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads SOD523
A
c
vM
H
E
D
12
b
E
p
(1)
OUTLINE
VERSION
SOD523 SC-79
IEC JEDEC JEITA
A
REFERENCES
A
DIMENSIONS (mm are the original dimensions)
UNIT b
Note
1. The marking bar indicates the cathode.
AH
0.65
mm
0.58
0 0.5 1 mm
scale
cD
p
0.34
0.17
0.26
1.25
0.11
1.15
EUROPEAN
PROJECTION
E
0.85
0.75
v
E
1.65
0.1
1.55
ISSUE DATE
98-11-25
02-12-13
2003 Apr 04 5
Philips Semiconductors Product specification
Low VF MEGA Schottky barrier diode
DATA SHEET STATUS
LEVEL
I Objective data Development This data sheet contains data from the objective specification for product
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
III Product data Production This data sheet contains data from the product specification. Philips
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
3. For datasheets describingmultipletype numbers,the highest-level productstatus determines thedata sheetstatus.
DATA SHEET
STATUS
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
(1)
PRODUCT
STATUS
(2)(3)
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITION
PMEG2005EB
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting valuesdefinition Limitingvalues givenare in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese orat anyother conditionsabovethose givenin the
Characteristics sectionsof the specification isnot implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentation orwarrantythat suchapplications willbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably beexpected toresult inpersonal injury.Philips
Semiconductorscustomers usingorselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design
and/or performance.When theproduct is infull production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductorsassumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
2003 Apr 04 6
Philips Semiconductors Product specification
Low VF MEGA Schottky barrier diode
NOTES
PMEG2005EB
2003 Apr 04 7
Philips Semiconductors – a w orldwide compan y
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document doesnot formpart of any quotation or contract, isbelieved tobe accurate and reliable and may bechanged
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands 613514/02/pp8 Date of release: 2003 Apr 04 Document order number: 9397 75011354
SCA75
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