Datasheet PMEG2005AEA, PMEG3005AEA, PMEG4005AEA Datasheet (Philips)

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DISCRETE SEMICONDUCTORS

DATA SH EET

book, halfpage

M3D049

PMEG2005AEA; PMEG3005AEA;
PMEG4005AEA

Very low V

MEGA Schottky barrier

F

rectifiers

Product specification 2003 Aug 20

Philips Semiconductors Product specification

Very low VF MEGA
Schottky barrier rectifiers

FEATURES

• Very low forward voltage

• High surge current

• Very small plastic SMD package.

APPLICATIONS

• Low voltage rectification

• High efficiency DC/DC conversion

• Voltage clamping

• Inverse polarity protection

• Low power consumption applications.

DESCRIPTION

Planar Maximum Efficiency General Application (MEGA)
Schottky barrier rectifier with an integrated guard ring for
stressprotection,encapsulatedin aSOD323 (SC-76)very
small SMD plastic package.

PMEG2005AEA; PMEG3005AEA;

PMEG4005AEA

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT

I

F

V

R

PINNING

lumns

forward current 0.5 A
reverse voltage

PMEG2005AEA 20 V
PMEG3005AEA 30 V
PMEG4005AEA 40 V

PIN DESCRIPTION

1 cathode
2 anode

1

ka

2

The marking bar indicates the cathode.

Fig.1 Simplified outline (SOD323; SC-76) and

symbol.

MARKING

TYPE NUMBER MARKING CODE

PMEG2005AEA E5
PMEG3005AEA E4
PMEG4005AEA E3

RELATED PRODUCTS

TYPE NUMBER DESCRIPTION FEATURE

PMEGxx05AEV 0.5 A; 20/30/40 V very low V
PMEG2005EB 0.5 A; 20 V very low V
PMEG2010EA 1 A; 20 V very low V

F

MEGA Schottky rectifier higher forward current

F

MEGA Schottky rectifier SOT666 package

F

MEGA Schottky rectifier smaller SOD523 (SC-79) package

MAM283

2003 Aug 20 2

Philips Semiconductors Product specification

Very low VF MEGA
Schottky barrier rectifiers

PMEG2005AEA; PMEG3005AEA;

PMEG4005AEA

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

R

continuous reverse voltage

PMEG2005AEA − 20 V
PMEG3005AEA − 30 V
PMEG4005AEA − 40 V

I

F

I

FRM

I

FSM

T
T
T

j
amb
stg

continuous forward current note 1 − 0.5 A
repetitive peak forward current tp≤ 1 ms; δ≤0.5 − 3.5 A
non-repetitive peak forward current tp= 8 ms; square wave − 10 A
junction temperature note 2 − 150 °C
operating ambient temperature note 2 −65 +150 °C
storage temperature −65 +150 °C

Notes

1. Refer to SOD323 (SC-76) standard mounting conditions.

2. For Schottkybarrier diodesthermal runawayhas to beconsidered, asin someapplications thereversepower losses
P

are asignificant part of thetotal power losses.Nomograms for determination ofthe reverse power lossesPRand

R

I

rating will be available on request.

F(AV)

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

R

th j-a

th j-s

thermal resistance from junction to
ambient

thermal resistance from junction to

in free air; notes 1 and 2 450 K/W
in free air; notes 2 and 3 210 K/W
note 4 90 K/W

soldering point

Notes

1. Refer to SOD323 (SC-76) standard mounting conditions.

2. For Schottkybarrier diodesthermal runawayhas to beconsidered, asin someapplications thereversepower losses
P

are asignificant part of thetotal power losses.Nomograms for determination ofthe reverse power lossesPRand

R

I

rating will be available on request.

F(AV)

3. Device mounted on an FR4 printed-circuit board with copper clad 10 × 10 mm.

4. Solder point of cathode tab.

2003 Aug 20 3

Philips Semiconductors Product specification

Very low VF MEGA
Schottky barrier rectifiers

ELECTRICAL CHARACTERISTICS

T

=25°C unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS

V

F

I

R

C

d

Note

1. Pulse test: t

forward voltage IF= 0.1 mA 90 130 90 130 95 130 mV

I

= 1 mA 150 190 150 200 155 210 mV

F

I

= 10 mA 210 240 215 250 220 270 mV

F

I

= 100 mA 280 330 285 340 295 350 mV

F

I

= 500 mA 355 390 380 430 420 470 mV

F

continuous reverse
current

VR= 10 V; note 1 15 40 12 30 7 20 µA
V

= 20 V; note 1 40 200 −−−−µA

R

V

= 30 V; note 1 −−40 150 −−µA

R

V

= 40 V; note 1 −−−−30 100 µA

R

diode capacitance VR= 1 V; f = 1 MHz 66 80 55 70 43 50 pF

≤ 300 µs; δ≤0.02.

p

PMEG2005AEA; PMEG3005AEA;

PMEG4005AEA

PMEG2005AEA PMEG3005AEA PMEG4005AEA

UNIT

TYP. MAX. TYP. MAX. TYP. MAX.

2003 Aug 20 4

Philips Semiconductors Product specification

Very low VF MEGA
Schottky barrier rectifiers

GRAPHICAL DATA

3

10

handbook, halfpage

I

F

(mA)

2

10

(1) (2) (3)

10

1

−1

10

0

PMEG2005AEA

(1) T
(2) T
(3) T

amb
amb
amb

= 150°C.
=85°C.
=25°C.

VF (V)

MDB675

PMEG2005AEA; PMEG3005AEA;

PMEG4005AEA

5

10

handbook, halfpage

I

R

(µA)

4

10

3

10

2

10

10

0.60.40.2

1

01051520

PMEG2005AEA

(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C.
=85°C.
=25°C.

(1)

(2)

(3)

MDB676

V

(V)

R

Fig.2 Forward current as a function of forward

voltage; typical values.

150

handbook, halfpage

C

d

(pF)

100

50

0

01051520

PMEG2005AEA

f = 1 MHz; T

amb

=25°C.

MDB677

V

(V)

R

Fig.3 Reverse current as a function of reverse

voltage; typical values.

Fig.4 Diode capacitance as a function of reverse

voltage; typical values.

2003 Aug 20 5

Philips Semiconductors Product specification

Very low VF MEGA
Schottky barrier rectifiers

3

10

handbook, halfpage

I

F

(mA)

2

10

(1) (2) (3)

10

1

−1

10

0

PMEG3005AEA

(1) T
(2) T
(3) T

amb
amb
amb

= 150°C.
=85°C.
=25°C.

VF (V)

MDB672

PMEG2005AEA; PMEG3005AEA;

PMEG4005AEA

VR (V)

MDB673

3020100

5

10

handbook, halfpage

I

R

(µA)

4

10

3

10

2

10

10

0.60.40.2

1

PMEG3005AEA

(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C.
=85°C.
=25°C.

(1)

(2)

(3)

Fig.5 Forward current as a function of forward

voltage; typical values.

120

handbook, halfpage

C

d

(pF)

80

40

0

0 5 10 20

PMEG3005AEA

f = 1 MHz; T

amb

=25°C.

MDB674

15

VR (V)

Fig.6 Reverse current as a function of reverse

voltage; typical values.

Fig.7 Diode capacitance as a function of reverse

voltage; typical values.

2003 Aug 20 6

Philips Semiconductors Product specification

Very low VF MEGA
Schottky barrier rectifiers

3

10

handbook, halfpage

I

F

(mA)

2

10

(1) (2) (3)

10

1

−1

10

PMEG4005AEA

(1) T
(2) T
(3) T

amb
amb
amb

= 150°C.
=85°C.
=25°C.

VF (V)

MDB669

PMEG2005AEA; PMEG3005AEA;

PMEG4005AEA

5

10

handbook, halfpage

I

R

(µA)

4

10

3

10

2

10

10

0.60.40.20

1

02010 30 40

PMEG4005AEA

(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C.
=85°C.
=25°C.

(1)

(2)

(3)

MDB670

VR (V)

Fig.8 Forward current as a function of forward

voltage; typical values.

100

handbook, halfpage

C

d

(pF)

80

60

40

20

0

0 5 10 20

PMEG4005AEA

f = 1 MHz; T

amb

=25°C.

MDB671

15

VR (V)

Fig.9 Reverse current as a function of reverse

voltage; typical values.

Fig.10 Diode capacitance as a function of reverse

voltage; typical values.

2003 Aug 20 7

Philips Semiconductors Product specification

Very low VF MEGA
Schottky barrier rectifiers

PACKAGE OUTLINE

Plastic surface mounted package; 2 leads

A

A

1

PMEG2005AEA; PMEG3005AEA;

c

L

p

H

E

v M

PMEG4005AEA

SOD323

Q

A

D

12

b

E

p

(1)

0 1 2 mm

DIMENSIONS (mm are the original dimensions)

A

UNIT b

1.1

mm

0.8

Note

1. The marking bar indicates the cathode.

OUTLINE
VERSION

SOD323 SC-76

1

A

max.

0.40

+ 0.05

0.25

− 0.05

cD

p

0.25

1.8

0.10

1.6

IEC JEDEC EIAJ

H

E

1.35

2.7

1.15

2.3

REFERENCES

E

L

0.45

0.15

p

A

scale

Qv

0.25

0.15

0.2

EUROPEAN

PROJECTION

ISSUE DATE

98-09-14
99-09-13

2003 Aug 20 8

Philips Semiconductors Product specification

Very low VF MEGA
Schottky barrier rectifiers

DATA SHEET STATUS

LEVEL

I Objective data Development This data sheet contains data from the objective specification for product

II Preliminary data Qualification This data sheet contains data from the preliminary specification.

III Product data Production This data sheet contains data from the product specification. Philips

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

3. For datasheets describing multipletype numbers,the highest-level productstatus determines thedata sheetstatus.

DATA SHEET

STATUS

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

(1)

PRODUCT

STATUS

(2)(3)

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).

PMEG2005AEA; PMEG3005AEA;

PMEG4005AEA

DEFINITION

DEFINITIONS
Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting valuesdefinition  Limitingvalues givenarein
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese orat anyother conditionsabovethose givenin the
Characteristics sectionsof the specification isnot implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentation orwarrantythat suchapplications willbe
suitable for the specified use without further testing or
modification.

DISCLAIMERS
Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably beexpected toresult inpersonal injury.Philips
Semiconductorscustomers usingorselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design
and/or performance.When theproduct is infull production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductorsassumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2003 Aug 20 9

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [e-mail].

© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not formpart ofany quotation or contract, is believed to be accurateand reliableand may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands 613514/01/pp10 Date of release: 2003 Aug 20 Document order number: 9397 750 11615

SCA75