Philips PMBF4416, PMBF4416A Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
PMBF4416; PMBF4416A
N-channel field-effect transistor
Product specification
File under Discrete Semiconductors, SC07
April 1995
Philips Semiconductors Product specification
N-channel field-effect transistor PMBF4416; PMBF4416A
FEATURES
• Low noise
• Interchangeability of drain and
source connections
• High gain.
3
g
MAM385
d
s
DESCRIPTION
N-channel symmetrical silicon
junction FETs in a surface-mountable
SOT23 envelope. These devices are
intended for use in VHF/UHF
amplifiers, oscillators and mixers.
handbook, halfpage
12
Top view
PINNING - SOT23
PIN DESCRIPTION
1 source
2 drain
3 gate
Marking codes:
PMBF4416: P6A.
PMBF4416A: M16.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
drain-source voltage
PMBF4416 − 30 V
PMBF4416A − 35 V
I
DSS
drain-source current VDS = 15 V;
515mA
VGS = 0
P
tot
total power
up to T
= 25 °C − 250 mW
amb
dissipation
V
GS(off)
gate-source cut-off
voltage
VDS = 15 V;
ID = 1 nA
PMBF4416 −−6V
PMBF4416A −2.5 −6V
Y
common-source
fs
transfer admittance
VDS = 15 V;
VGS = 0; f = 1 kHz
4.5 7.5 mS
April 1995 2
Philips Semiconductors Product specification
N-channel field-effect transistor PMBF4416; PMBF4416A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
G
P
T
T
DS
GSO
GDO
tot
stg
j
drain-source voltage
PMBF4416 − 30 V
PMBF4416A − 35 V
gate-source voltage
PMBF4416 −−30 V
PMBF4416A −−35 V
gate-drain voltage
PMBF4416 −−30 V
PMBF4416A −−35 V
DC forward gate current − 10 mA
total power dissipation up to T
= 25 °C (note 1) − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
THERMAL RESISTANCE
SYMBOL PARAMETER THERMAL RESISTANCE
R
th j-a
from junction to ambient (note 1) 500 K/W
Note
1. Mounted on an FR4 printed-circuit board.
STATIC CHARACTERISTICS
= 25 °C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
(BR)GSS
gate-source breakdown voltage VDS = 0; IG = −1 µA
PMBF4416 −30 − V
PMBF4416A −35 − V
I
GSS
I
DSS
V
GSS
V
GS(off)
reverse gate leakage current VDS = 0; VGS = −15 V − 1nA
drain current VDS = 15 V; VGS = 0 5 15 mA
gate-source forward voltage VDS = 0; IG = 1 mA − 1V
gate-source cut-off voltage VDS = 15 V; ID = 1 nA
PMBF4416 −−6V
PMBF4416A −2.5 −6V
common source transfer admittance VDS = 15 V; VGS = 0 4.5 7.5 mS
Y
fs
common source output admittance VDS = 15 V; VGS = 0
Y
os
PMBF4416 − 50 µS
PMBF4416A − 50 µS
April 1995 3
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