Philips PMBF107 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
PMBF107
N-channel enhancement mode
vertical D-MOS transistor
Product specification
File under Discrete Semiconductors, SC13b
April 1995
Philips Semiconductors Product specification
N-channel enhancement mode vertical
D-MOS transistor
FEATURES
• Direct interface to C-MOS, TTL,
etc.
• High-speed switching
• No secondary breakdown.
DESCRIPTION
N-channel enhancement mode
vertical D-MOS transistor in a SOT23
envelope and intended for use as a
line current interruptor in telephone
sets and for applications in relay,
high-speed and line transformer
drivers.
PINNING - SOT23
PIN DESCRIPTION
1 gate
2 source
3 drain
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
DS
I
D
R
DS(on)
V
GS(th)
drain-source voltage 200 V
drain current DC value 100 mA
drain-source on-resistance ID = 20 mA
gate-source threshold voltage ID = 1 mA
PIN CONFIGURATION
dbook, halfpage
VGS = 2.6 V
VGS = V
3
12
Top view
MSB003
handbook, 2 columns
g
MBB076 - 1
PMBF107
28 Ω
2.4 V
DS
d
s
Fig.1 Simplified outline and symbol.
April 1995 2
Philips Semiconductors Product specification
N-channel enhancement mode vertical
PMBF107
D-MOS transistor
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
±V
GSO
I
D
I
DM
P
tot
T
stg
T
j
Note
1. Device mounted on an FR4 printboard.
THERMAL RESISTANCE
SYMBOL PARAMETER VALUE UNIT
R
th j-a
drain-source voltage − 200 V
gate-source voltage open drain − 20 V
drain current DC value − 100 mA
drain current peak value − 250 mA
total power dissipation T
= 25 °C (note 1) − 250 mW
amb
storage temperature range −65 150 °C
junction temperature − 150 °C
from junction to ambient (note 1) 500 K/W
Note
1. Device mounted on an FR4 printboard.
April 1995 3
Philips Semiconductors Product specification
N-channel enhancement mode vertical
PMBF107
D-MOS transistor
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
drain-source breakdown voltage ID = 10 µA
VGS = 0
I
DSS
drain-source leakage current VDS = 130 V
VGS = 0
I
DSX
drain cut-off current VDS = 70 V
VGS = 0.2 V
±I
GSS
gate-source leakage current ±VGS = 15 V
VDS = 0
V
GS(th)
gate-source threshold voltage ID = 1 mA
VGS = V
R
DS(on)
drain-source on-resistance ID = 20 mA
VGS = 2.6 V
I
D
VGS = 10 V
Y
transfer admittance ID = 250 mA
fs
VDS = 15 V
C
iss
input capacitance VDS = 10 V
VGS = 0
f = 1 MHz
C
oss
output capacitance VDS = 10 V
VGS = 0
f = 1 MHz
C
rss
feedback capacitance VDS = 10 V
VGS = 0
f = 1 MHz
DS
= 150 mA
200 −− V
−−30 nA
−−1 µA
−−10 nA
0.8 − 2.4 V
− 20 28 Ω
− 14 −Ω
90 180 − mS
− 50 65 pF
− 16 25 pF
− 410pF
Switching times (see Figs 2 and 3)
t
on
t
off
turn-on time ID = 250 mA
turn-off time ID = 200 mA
April 1995 4
= 50 V
V
DD
VGS = 0 to 10 V
VDD = 50 V
VGS = 0 to 10 V
− 210ns
− 520ns
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