Philips PMBD6050 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
PMBD6050
High-speed diode
Product specification
Supersedes data of 1996 Sep 18
1999 May 11
Philips Semiconductors Product specification
High-speed diode PMBD6050
FEATURES
• Small plastic SMD package
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 70 V
DESCRIPTION
The PMBD6050 is a high-speed
switching diode fabricated in planar
technology, and encapsulated in the
small SOT23 plastic SMD package.
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 500 mA.
handbook, halfpage
21
APPLICATIONS
• High-speed switching in thick and
thin-film circuits.
Marking code: p5A =made in Hong Kong; t5A = made in Malaysia.
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
PINNING
3
PIN DESCRIPTION
1 anode
2 not connected
3 cathode
2
n.c.
3
1
MAM185
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
F
I
FRM
I
FSM
RRM
R
repetitive peak reverse voltage − 85 V
continuous reverse voltage − 70 V
continuous forward current note 1; see Fig.2 − 215 mA
repetitive peak forward current − 500 mA
non-repetitive peak forward
current
square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs − 4A
t=1ms − 1A
t=1s − 0.5 A
P
tot
T
stg
T
j
total power dissipation T
=25°C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 11 2
Philips Semiconductors Product specification
High-speed diode PMBD6050
ELECTRICAL CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
I
R
C
d
t
rr
V
fr
forward voltage see Fig.3
I
= 1 mA 715 mV
F
I
= 10 mA 855 mV
F
=50mA 1 V
I
F
I
= 150 mA 1.25 V
F
reverse current see Fig.5
= 50 V 100 nA
V
R
V
=50V; Tj= 150 °C50 µA
R
diode capacitance f = 1 MHz; VR= 0; see Fig.6 1.5 pF
reverse recovery time when switched from IF= 10 mA to
4ns
IR= 10 mA; RL= 100 Ω;
measured at IR= 1 mA; see Fig.7
forward recovery voltage when switched from IF= 10 mA;
1.75 V
tr= 20 ns; see Fig.8
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point 330 K/W
thermal resistance from junction to ambient note 1 500 K/W
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 11 3
Philips Semiconductors Product specification
High-speed diode PMBD6050
GRAPHICAL DATA
150
MSA562 -1
T
amb
o
(
C)
250
I
F
(mA)
200
150
100
50
0
0 50 100 200
Device mounted on an FR4 printed-circuit board.
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
300
handbook, halfpage
I
F
(mA)
200
100
0
02
(1) Tj= 150 °C; typical values.
(2) Tj=25°C; typical values.
(3) Tj=25°C; maximum values.
(1) (3)(2)
1
MBG382
VF (V)
Fig.3 Forward current as a function of forward
voltage.
2
10
handbook, full pagewidth
I
FSM
(A)
10
1
−1
10
1
Based on square wave currents.
=25°C prior to surge.
T
j
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
MBG704
10
2
10
3
10
tp (µs)
4
10
1999 May 11 4
Loading...