Philips PMBD352, PMBD353 Datasheet
DATA SH EET
Product specification
Supersedes data of 1996 Mar 20
1999 May 25
DISCRETE SEMICONDUCTORS
PMBD353
Schottky barrier double diode
ok, halfpage
M3D088
1999 May 25 2
Philips Semiconductors Product specification
Schottky barrier double diode PMBD353
FEATURES
• Low forward voltage
• Small SMD package
• Low capacitance.
APPLICATIONS
• UHF mixer
• Sampling circuits
• Modulators
• Phase detection.
DESCRIPTION
Planar Schottky barrier double diode in a SOT23 small plastic SMD package.
PINNING
PIN DESCRIPTION
1k
1
2a
2
3a
1
, k
2
Fig.1 Simplified outline (SOT23) pin configuration and symbol.
handbook, 2 columns
MGC487
12
3
handbook, 2 columns
21
3
MGC421
Top view
Marking code: A6p =made in Hong Kong; A6t = made in Malaysia.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
Per diode
V
R
continuous reverse voltage
−
4V
I
F
continuous forward current −
30 mA
T
stg
storage temperature
−65
+150 °C
T
j
junction temperature
−
100 °C
1999 May 25 3
Philips Semiconductors Product specification
Schottky barrier double diode PMBD353
ELECTRICAL CHARACTERISTICS
T
amb
=25°C unless otherwise specified.
Note
1. Pulse test: t
p
= 300 µs; δ = 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT23 standard mounting conditions.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Per diode
V
F
forward voltage see Fig.2
I
F
= 0.1 mA
350 mV
I
F
=1mA
450 mV
I
F
=10mA
600 mV
I
R
reverse current VR= 3 V; note 1; see Fig.3
0.25
µA
C
d
diode capacitance f = 1 MHz; VR= 0; see Fig.4
1pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 500 K/W
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