Philips PMBD2835 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
PMBD2835; PMBD2836
High-speed double diodes
Product specification
Supersedes data of April 1996
1996 Sep 18
Philips Semiconductors Product specification
High-speed double diodes PMBD2835; PMBD2836
FEATURES
• Small plastic SMD package
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 35 V and 75 V respectively
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 450 mA.
APPLICATIONS
• High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
The PMD2835, PMD2836 consist of
two high-speed switching diodes with
common anodes, fabricated in planar
technology, and encapsulated in
small plastic SMD SOT23 packages.
MARKING
TYPE NUMBER
PMBD2835 pA3
PMBD2836 pA2
handbook, 4 columns
21
Top view
Fig.1 Simplified outline (SOT23) and symbol.
MARKING
CODE
3
PINNING
PIN DESCRIPTION
1 cathode (k1)
2 cathode (k2)
3 common anode
21
3
MAM206
1996 Sep 18 2
Philips Semiconductors Product specification
High-speed double diodes PMBD2835; PMBD2836
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
V
V
I
F
I
FRM
I
FSM
P
T
T
RRM
R
tot
stg
j
repetitive peak reverse voltage
PMBD2835 − 85 V
PMBD2836 − 85 V
continuous reverse voltage
PMBD2835 − 35 V
PMBD2836 − 75 V
continuous forward current single diode loaded; see Fig.2;
− 215 mA
note 1
double diode loaded; see Fig.2;
− 125 mA
note 1
repetitive peak forward current 450 mA
non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs − 4A
t=1ms − 1A
t=1s − 0.5 A
total power dissipation T
=25°C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 18 3
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