1. Product profile
1.1 Description
1.2 Features
PIP3221-DC
Dual channel high-side TOPFET™
Rev. 01 — 20 February 2004 Product data
Monolithic temperature and overload protected dual high-side powerswitch based on
TOPFET™ Trench technology in a 7-pin surface mount plastic package.
■ Very low quiescent current ■ CMOS logic compatibility
■ Power TrenchMOS™ ■ Current limitation
■ Overtemperature protection ■ Soft latched overload protection
■ Over and undervoltage protection ■ ESD protection for all pins
■ Reverse battery protection ■ Diagnostic status indication
■ Low charge pump noise ■ Off-state open load detection
■ Loss of ground protection ■ Load dump protection
■ Negative load clamping ■ Internal ground resistor.
1.3 Applications
■ 12 and 24 V grounded loads ■ High inrush current loads
■ Inductive loads ■ Replacement for relays and fuses.
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter Min Max Units
R
BLon
I
L
I
L(nom)
I
L(lim)
V
BG(oper)
battery-load on-state resistance - 90 mΩ
load current - 4 A
nominal load current (ISO) 3.6 - A
self-limiting load current 8 16 A
battery-ground operating voltage 5.5 35 V
Philips Semiconductors
2. Pinning information
PIP3221-DC
Dual channel high-side TOPFET™
B
S
mb
1234567
Front view
No connection can be made to pin 4 (cropped). P represents protection circuitry.
MBK128
I1
I2
P
G
L1
L2
03pa68
Fig 1. Pinning; SOT427 (D2-PAK). Fig 2. Symbol; (Dual High-Side Switch) TOPFETTM.
2.1 Pin description
Table 2: Pin description
Symbol Pin I/O Description
L1 1 O load 1
G 2 - circuit common ground
I1 3 I input 1
B4 -
[1] [2]
S 5 O status
I2 6 I input 2
L2 7 O load 2
-m b -
[2]
battery
mounting base
[1] Pin 4 is cropped and cannot be connected to the PCB by surface mounting.
[2] The battery is connected to the mounting base.
3. Ordering information
Table 3: Ordering information
Type number Package
Name Description Version
2
PIP3221-DC D
-PAK Plastic single-ended surface mounted package (Philips version of D2-PAK);
7 leads (one lead cropped)
9397 750 12361
Product data Rev. 01 — 20 February 2004 2 of 16
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
SOT427
Philips Semiconductors
4. Block diagram
CHANNEL1
REGULATOR
CHARGE PUMP
CURRENT LIMIT
VOLTAGE
PIP3221-DC
Dual channel high-side TOPFET™
4/mb
B
POWER
MOSFET1
3
I1
6
I2
CONTROL
LOGIC1
STATUS DIAGNOSIS
CONTROL
LOGIC2
OPEN CIRCUIT
OVERVOLTAGE
PROTECTION
UNDERVOLTAGE
PROTECTION
SHORT CIRCUIT
PROTECTION
TEMPERATURE
CHANNEL2
REGULATOR
CHARGE PUMP
CURRENT LIMIT
OPEN CIRCUIT
OVERVOLTAGE
PROTECTION
UNDERVOLTAGE
PROTECTION
SHORT CIRCUIT
PROTECTION
TEMPERATURE
SENSOR
SENSOR
VOLTAGE
SENSOR
SENSOR
POWER
MOSFET2
R
LG1
R
LG2
1
L1
5
S
7
L2
R
2
G
G
03ap07
Fig 3. Elements of the dual high-side TOPFET switch.
9397 750 12361
Product data Rev. 01 — 20 February 2004 3 of 16
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Philips Semiconductors
PIP3221-DC
Dual channel high-side TOPFET™
5. Functional description
A diagnostic status ensures faster fault detection.
Active current limit is combined with a soft latched short circuit protection feature in
order to protect the device in the event of a short circuit.
Thermal shutdown for high temperature conditions has an automatic restart at a
lower temperature so providing protection against excessive power dissipation.
Active clamping protects the device against low energy spikes.
Undervoltage lockout means the device shuts down for low battery voltages, thus
avoiding faulty operation.
Overvoltage shutdown in the on-state protects a load such as a lamp filament from
potentially destructive voltage spikes.
Table 4: Truth table
Abbreviations: L = logic LOW; H = logic HIGH; X = don’t care; 0 = condition not present; 1 = condition present;
UV = undervoltage; OV = overvoltage; OC = open circuit load; SC = short circuit; OT = overtemperature
Input Supply Load 1 Load 2 Load output Status Operating mode
1 2 UV OV OC SC OT OC SC OT 1 2
L L 0 X 0 X X 0 X X OFF OFF H both off & normal
LL0X1XXXXXO F FO F F Lboth off, one/both OC or
shorted to V
Figure 10
L H 0 X 1 X X 0 0 0 OFF ON L one off & OC, with other on
& normal
HL00000000O NO F FHone on & normal, with other
off & normal
HH00000000O NO N Hboth on & normal
H X 1 0 X X X 0 X X OFF OFF H supply undervoltage lockout
H X 0 1 X 0 0 X 0 0 OFF OFF H supply overvoltage
shutdown
HX0001XXXXO F FX Lone SC shutdown
HL0001X00XO F FO F FLo n e S C shutdown,with other
off & normal
HH0001X000O F FO N Lo n e S C shutdown,with other
on & normal
HX00001XXXO F FX Lone OT shutdown
HL0000100XO F FO F FLo n e O T shutdown, withother
off & normal
HH00001000O F FO N Lo n e O T shutdown, withother
on & normal
[1]
.
or battery;
S
[1] The status will continue to indicate OT (even if the input goes LOW) until the device cools below the reset threshold temperature.
See “Overtemperature protection” characteristics in Table 7 “Static characteristics” .
9397 750 12361
Product data Rev. 01 — 20 February 2004 4 of 16
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Philips Semiconductors
PIP3221-DC
Dual channel high-side TOPFET™
6. Limiting values
Table 5: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
BG
I
L
P
tot
T
stg
T
j
T
mb
battery-ground supply voltage
load current Tmb≤ 130 °C- 4 A
total power dissipation Tmb≤ 25 °C - 44.6 W
storage temperature − 55 +175 ° C
junction temperature − 40 +150 ° C
mounting base temperature during soldering (≤ 10 s) - 260 ° C
Reverse battery voltage
V
V
BGR
BGRR
reverse battery-ground supply voltage RI≥ 3.3 kΩ; RSS≥ 3.3 kΩ; Figure 10
repetitive reverse battery-ground
supply voltage
Input current
I
I
I
IRM
input current − 5+ 5m A
repetitive peak input current δ≤ 0.1; tp= 300 µ s − 50 +50 mA
Status current
I
S
I
SRM
status current − 5+ 5m A
repetitive peak status current δ≤ 0.1; tp= 300 µ s − 50 +50 mA
Inductive load clamping
E
BL(CL)S
non-repetitive battery-load clamping
energy
Electrostatic discharge voltage
V
esd
electrostatic discharge voltage Human Body Model 1; C = 100 pF;
Tj= 150 ° C prior to turn-off; VBG=13V;
= 5 A; (one channel) Figure 13
I
L
R = 1.5 kΩ
[1]
-4 5V
[2]
-1 6V
-3 2V
-6 0m J
-2k V
[1] The device will not be harmed by exposure to the maximum supply voltage, but normal operation isnot possiblebecause of overvoltage
shutdown - see Table 7 “Static characteristics” for the operating range.
[2] Reverse battery voltage is only allowed with external resistors to limit the input and status currents to a safe value. The connected load
must limit the reverse load current. The internal ground resistor limits the reverse battery ground current. See Figure 10 “Typical
dynamic response circuit diagram including reverse supply protection and open load detection.”
7. Thermal characteristics
Table 6: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
thermal resistance from junction to
mounting base
R
th(j-a)
thermal resistance from junction to
ambient
9397 750 12361
Product data Rev. 01 — 20 February 2004 5 of 16
per channel - 4 5.6 K/W
both channels - 2 2.8 K/W
mounted on printed circuit board;
- 50 - K/W
minimum footprint
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.