Philips PHX18NQ20T Datasheet

M3D308

1. Description

2. Features

PHX18NQ20T

N-channel enhancement mode ﬁeld-effect transistor

Rev. 01 — 28 August 2000 Product speciﬁcation

N-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™1 technology.

Product availability:

PHX18NQ20T in SOT186A.

■ TrenchMOS™ technology

■ Low on-state resistance

■ Fast switching

■ Low thermal resistance

■ Isolated tab.

3. Applications

c

■ Off-line switched mode power supplies

■ Television and computer monitor power supplies

■ DC to DC converters

■ Motor control circuits

4. Pinning information

Table 1: Pinning - SOT186A, simpliﬁed outline and symbol

Pin Description Simpliﬁed outline Symbol

1 gate (g) 2 drain (d) 3 source (s) Tab isolated

1. TrenchMOS is a trademark of Royal Philips Electronics.

isolated tab

03ab49

123

d

g

03ab30

s

Philips Semiconductors

PHX18NQ20T

N-channel FET

5. Quick reference data

Table 2: Quick reference data

Symbol Parameter Conditions Typ Max Unit

V I P T R

DS

D

tot j DSon

drain-source voltage (DC) Tj=25to150°C − 200 V drain current (DC) Ths=25°C; VGS=10V − 8.2 A total power dissipation Ths=25°C − 30 W junction temperature − 150 °C drain-source on-state resistance VGS= 10 V; ID= 8 A; Tj=25oC 130 180 mΩ

= 10 V; ID= 8 A; Tj= 150 °C − 450 mΩ

V

GS

6. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

DGR

V

GS

I

D

I

DM

P

tot

T

stg

T

j

Source-drain diode

I

S

I

SM

drain-source voltage (DC) Tj=25to150°C − 200 V drain-gate voltage (DC) Tj=25to150°C; RGS=20kΩ−200 V gate-source voltage (DC) −±20 V drain current (DC) Ths=25°C; VGS=10V;

− 8.2 A

Figure 2 and 3

T

= 100 °C; VGS=10V;Figure 2 − 5.2 A

hs

peak drain current Ths=25°C; pulsed; tp≤ 10 µs;

− 33 A

Figure 3

total power dissipation Ths=25°C; Figure 1 − 30 W storage temperature −55 +150 °C operating junction temperature −55 +150 °C

source (diode forward) current (DC) T peak source (diode forward) current T

=25°C − 8.2 A

amb

=25°C; pulsed; tp≤ 10 µs − 33 A

amb

9397 750 07452

Product speciﬁcation Rev. 01 — 28 August 2000 2 of 15

Philips Semiconductors

PHX18NQ20T

N-channel FET

120

100

P

der

(%)

80

60

40

20

0

0 25 50 75 100 125 150 175

P

der

tot

----------------------

P

tot 25 C°()

100%×=

03aa11

Tmb (oC)

Fig 1. Normalized total power dissipation as a

function of ambient temperature.

2

10

R

= VDS / I

ID

(A)

DSon

10

D

120

I

der

100

(%)

80

60

40

20

0

0 25 50 75 100 125 150 175

03aa19

T

(oC)

amb

VGS≥ 4.5 V

I

D

I

------------------ -

der

I

D25C°()

100%×=

Fig 2. Normalized continuous drain current as a

function of ambient temperature.

03ac74

tp = 10µs

100µs

t

p

δ

=

T

D.C.

t

T

10 ms

100 ms

3

2

VDS (V)

10

T

=25°C; IDM is single pulse.

amb

P

1

t

p

-1

10

11010

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

1 ms

9397 750 07452

Product speciﬁcation Rev. 01 — 28 August 2000 3 of 15

Philips Semiconductors

(s)

PHX18NQ20T

N-channel FET

7. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter Conditions Value Unit

R

th(j-hs)

R

th(j-a)

thermal resistance from junction to heatsink 4.17 K/W thermal resistance from junction to ambient vertical in still air;

55 K/W

lead length ≤ 5 mm; Figure 4

7.1 Transient thermal impedance

03ac73

t

p

δ

=

T

t

T

110

t

p

Z

th(j-a)

(K/W)

10

1

-2

-3 10

δ = 0.5

0.2

0.1

0.05

-1

0.02

single pulse

-6

10

-5

10

-4

10

-3

10

-2

10

P

t

p

-1

Fig 4. Transient thermal impedance from junction to ambient as a function of pulse

duration.

9397 750 07452

Product speciﬁcation Rev. 01 — 28 August 2000 4 of 15

Philips Semiconductors

PHX18NQ20T

N-channel FET

8. Characteristics

Table 5: Characteristics

Tj=25°C unless otherwise speciﬁed

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

drain-source breakdown voltage

V

I

DSS

I

GSS

R

GS(th)

DSon

gate-source threshold voltage ID= 1 mA; VDS=VGS;

drain-source leakage current VDS= 200 V; VGS=0V

gate-source leakage current VGS= ±10 V; VDS=0V − 10 100 nA drain-source on-state

resistance

Dynamic characteristics

g

C C C Q Q Q t t

fs

iss oss rss

g(tot) gs

gd on off

forward transconductance VDS=25V;I=8A;

input capacitance VGS=0V; VDS=25V; output capacitance − 170 _ pF reverse transfer capacitance − 91 _ pF total gate charge ID= 18 A; VDD= 160 V; gate-source charge − 9 − nC gate-drain (Miller) charge − 22 − nC turn-on time VDD= 100 V; RD= 5.6 Ω; turn-off time − 92 _ ns

Source-drain diode

V

SD

source-drain (diode forward) voltage

t

rr

Q

r

reverse recovery time IS= 16 A; recovered charge − 0.8 −µC

ID= 0.25 mA; VGS=0V

=25°C 200 −−V

T

j

= −55 °C 178 −−V

T

j

Figure 9

=25°C234 V

T

j

= 150 °C 1.2 −−V

T

j

= −55 °C −−6V

T

j

=25°C − 0.05 10 µA

T

j

= 150 °C −−100 µA

T

j

VGS=10V; ID=8A;

Figure 7 and 8

=25°C − 130 180 mΩ

T

j

= 150 °C −−450 mΩ

T

j

− 15 − S

Figure 11

− 1850 − pF

f = 1 MHz; Figure 12

− 40 − nC

=10V;Figure 14

V

GS

− 3_ns

=10V; RG= 5.6 Ω;

V

GS

Resistive load

IS= 16 A; VGS=0V;

− 0.9 1.2 V

Figure 13

− 130 − ns

/dt = −100 A/µs;

dI

S

=0V; VDS=25V

V

GS

9397 750 07452

Product speciﬁcation Rev. 01 — 28 August 2000 5 of 15