Philips PHX18NQ20T Datasheet

M3D308

1. Description

2. Features

PHX18NQ20T

N-channel enhancement mode field-effect transistor

Rev. 01 — 28 August 2000 Product specification

N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.

Product availability:

PHX18NQ20T in SOT186A.

■ TrenchMOS™ technology

■ Low on-state resistance

■ Fast switching

■ Low thermal resistance

■ Isolated tab.

3. Applications

c

c

■ Off-line switched mode power supplies

■ Television and computer monitor power supplies

■ DC to DC converters

■ Motor control circuits

4. Pinning information

Table 1: Pinning - SOT186A, simplified outline and symbol

Pin Description Simplified outline Symbol

1 gate (g)
2 drain (d)
3 source (s)
Tab isolated

1. TrenchMOS is a trademark of Royal Philips Electronics.

isolated tab

03ab49

123

d

g

03ab30

s

Philips Semiconductors

PHX18NQ20T

N-channel FET

5. Quick reference data

Table 2: Quick reference data

Symbol Parameter Conditions Typ Max Unit

V
I
P
T
R

DS

D

tot
j
DSon

drain-source voltage (DC) Tj=25to150°C − 200 V
drain current (DC) Ths=25°C; VGS=10V − 8.2 A
total power dissipation Ths=25°C − 30 W
junction temperature − 150 °C
drain-source on-state resistance VGS= 10 V; ID= 8 A; Tj=25oC 130 180 mΩ

= 10 V; ID= 8 A; Tj= 150 °C − 450 mΩ

V

GS

6. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

DGR

V

GS

I

D

I

DM

P

tot

T

stg

T

j

Source-drain diode

I

S

I

SM

drain-source voltage (DC) Tj=25to150°C − 200 V
drain-gate voltage (DC) Tj=25to150°C; RGS=20kΩ−200 V
gate-source voltage (DC) −±20 V
drain current (DC) Ths=25°C; VGS=10V;

− 8.2 A

Figure 2 and 3

T

= 100 °C; VGS=10V;Figure 2 − 5.2 A

hs

peak drain current Ths=25°C; pulsed; tp≤ 10 µs;

− 33 A

Figure 3

total power dissipation Ths=25°C; Figure 1 − 30 W
storage temperature −55 +150 °C
operating junction temperature −55 +150 °C

source (diode forward) current (DC) T
peak source (diode forward) current T

=25°C − 8.2 A

amb

=25°C; pulsed; tp≤ 10 µs − 33 A

amb

9397 750 07452

Product specification Rev. 01 — 28 August 2000 2 of 15

© Philips Electronics N.V. 2000. All rights reserved.

Philips Semiconductors

PHX18NQ20T

N-channel FET

120

100

P

der

(%)

80

60

40

20

0

0 25 50 75 100 125 150 175

P

P

der

tot

----------------------

P

tot 25 C°()

100%×=

03aa11

Tmb (oC)

Fig 1. Normalized total power dissipation as a

function of ambient temperature.

2

10

R

= VDS / I

ID

(A)

DSon

10

D

120

I

der

100

(%)

80

60

40

20

0

0 25 50 75 100 125 150 175

03aa19

T

(oC)

amb

VGS≥ 4.5 V

I

D

I

------------------ -

der

I

D25C°()

100%×=

Fig 2. Normalized continuous drain current as a

function of ambient temperature.

03ac74

tp = 10µs

100µs

t

p

δ

=

T

D.C.

t

T

10 ms

100 ms

3

2

VDS (V)

10

T

=25°C; IDM is single pulse.

amb

P

1

t

p

-1

10

11010

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

1 ms

9397 750 07452

© Philips Electronics N.V. 2000. All rights reserved.

Product specification Rev. 01 — 28 August 2000 3 of 15

Philips Semiconductors

(s)

PHX18NQ20T

N-channel FET

7. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter Conditions Value Unit

R

th(j-hs)

R

th(j-a)

thermal resistance from junction to heatsink 4.17 K/W
thermal resistance from junction to ambient vertical in still air;

55 K/W

lead length ≤ 5 mm; Figure 4

7.1 Transient thermal impedance

03ac73

t

p

δ

=

T

t

T

110

t

p

Z

th(j-a)

(K/W)

10

10

10

10

1

-2

-3
10

δ = 0.5

0.2

0.1

0.05

-1

0.02

single pulse

-6

10

-5

10

-4

10

-3

10

-2

10

P

t

p

-1

Fig 4. Transient thermal impedance from junction to ambient as a function of pulse

duration.

9397 750 07452

© Philips Electronics N.V. 2000. All rights reserved.

Product specification Rev. 01 — 28 August 2000 4 of 15

Philips Semiconductors

PHX18NQ20T

N-channel FET

8. Characteristics

Table 5: Characteristics

Tj=25°C unless otherwise specified

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

drain-source breakdown
voltage

V

I

DSS

I

GSS

R

GS(th)

DSon

gate-source threshold voltage ID= 1 mA; VDS=VGS;

drain-source leakage current VDS= 200 V; VGS=0V

gate-source leakage current VGS= ±10 V; VDS=0V − 10 100 nA
drain-source on-state

resistance

Dynamic characteristics

g

C
C
C
Q
Q
Q
t
t

fs

iss
oss
rss

g(tot)
gs

gd
on
off

forward transconductance VDS=25V;I=8A;

input capacitance VGS=0V; VDS=25V;
output capacitance − 170 _ pF
reverse transfer capacitance − 91 _ pF
total gate charge ID= 18 A; VDD= 160 V;
gate-source charge − 9 − nC
gate-drain (Miller) charge − 22 − nC
turn-on time VDD= 100 V; RD= 5.6 Ω;
turn-off time − 92 _ ns

Source-drain diode

V

SD

source-drain (diode forward)
voltage

t

rr

Q

r

reverse recovery time IS= 16 A;
recovered charge − 0.8 −µC

ID= 0.25 mA; VGS=0V

=25°C 200 −−V

T

j

= −55 °C 178 −−V

T

j

Figure 9

=25°C234 V

T

j

= 150 °C 1.2 −−V

T

j

= −55 °C −−6V

T

j

=25°C − 0.05 10 µA

T

j

= 150 °C −−100 µA

T

j

VGS=10V; ID=8A;

Figure 7 and 8

=25°C − 130 180 mΩ

T

j

= 150 °C −−450 mΩ

T

j

− 15 − S

Figure 11

− 1850 − pF

f = 1 MHz; Figure 12

− 40 − nC

=10V;Figure 14

V

GS

− 3_ns

=10V; RG= 5.6 Ω;

V

GS

Resistive load

IS= 16 A; VGS=0V;

− 0.9 1.2 V

Figure 13

− 130 − ns

/dt = −100 A/µs;

dI

S

=0V; VDS=25V

V

GS

9397 750 07452

Product specification Rev. 01 — 28 August 2000 5 of 15

© Philips Electronics N.V. 2000. All rights reserved.

Philips Semiconductors

PHX18NQ20T

N-channel FET

6 V

5.5 V

4.5 V

VDS (V)

03ac80

8V

ID(A)

03ac75

6 V

5 V

20
18

I

D

(A)

=25°C and 150 °C; VDS> ID× R

j

VDS > ID X R

16
14
12
10

8
6
4
2
0

0123456

DSon

DSon

Fig 6. Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

3

a

2.8

2.6

2.4

2.2
2

1.8

1.6

1.4

1.2
1

0.8

0.6

0.4

0.2
0

-60 -20 20 60 100 140 180

20
18

I

(A)

Tj = 25 oC

D

16
14
12
10

8
6
4
2
0

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

VGS = 10V

8 V

Tj=25°CT

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values.

0.3

R

DSon

(Ω)

4.5 V

0.25

0.2

0.15

0.1

0.05

0

0 2 4 6 8 10 12 14 16 18 20

5 V

Tj = 25 oC

5.5 V

VGS = 10 V

03ac82

150 oC

Tj = 25 oC

VGS (V)

03aa31

Tj (oC)

Tj=25°C

Fig 7. Drain-source on-state resistance as a function

of drain current; typical values.

9397 750 07452

Fig 8. Normalized drain-source on-state resistance

R

DSon

=

a

----------------------------

R

DSon 25 C°()

factor as a function of junction temperature.

© Philips Electronics N.V. 2000. All rights reserved.

Product specification Rev. 01 — 28 August 2000 6 of 15

Philips Semiconductors

PHX18NQ20T

N-channel FET

5

4.5

V

GS(th)

4

(V)

3.5
3

2.5
2

1.5
1

0.5
0

-60 -20 20 60 100 140 180

ID= 1 mA; VDS=V

max.

typ.

min

GS

03aa32

Tj (oC)

Fig 9. Gate-source threshold voltage as a function of

junction temperature.

25

gfs
(S)

VDS > ID X R

20

15

10

5

0

02468101214161820

DSon

03ac76

Tj = 25 oC

150 oC

ID (A)

-1

10

I

D

(A)

-2

10

-3

10

-4

10

-5

10

-6

10

012345

03aa35

maxtypmin

VGS (V)

Tj=25°C; VDS=5V

Fig 10. Sub-threshold drain current as a function of

gate-source voltage.

VDS (V)

03ac78

C

C

oss

C

iss

rss

2

4

10

C

, C

,

iss

oss

C

(pF)

rss

3

10

2

10

10

-1

10

11010

Tj=25°C and 150 °C; VDS> ID× R

DSon

Fig 11. Forward transconductance as a function of

drain current; typical values.

VGS= 0 V; f = 1 MHz

Fig 12. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical
values.

9397 750 07452

Product specification Rev. 01 — 28 August 2000 7 of 15

© Philips Electronics N.V. 2000. All rights reserved.

Philips Semiconductors

PHX18NQ20T

N-channel FET

Tj = 25oC

VSD (V)

03ac77

1.2

15
14

V
(V)

GS

ID = 18 A

13

Tj = 25 oC

12
11
10

9
8
7
6
5
4
3
2
1
0

0 5 10 15 20 25 30 35 40 45 50 55 60

VDD = 40V

20

VGS = 0 V

18

IS

16

(A)

14
12
10

8
6
4
2
0

0

0.2 0.4

150oC

0.6

0.8 1

03ac79

VDD = 160V

QG (nC)

Tj=25°C and 150 °C; VGS=0V

Fig 13. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical

Fig 14. Gate-source voltage as a function of gate

charge; typical values.

values.

9. Isolation characteristics

Table 6: Isolation characteristics

Symbol Parameter Conditions Min. Typ. Max. Unit

V

isol

RMS isolation voltage
from all three terminals
to external heatsink.

C

isol

Capacitance from pin 2
(drain) to external
heatsink.

f = 50-60 Hz; sinusoidal
waveform; RH ≤ 65%; clean
and dust-free.

−−2500 V

− 10 − pF

9397 750 07452

© Philips Electronics N.V. 2000. All rights reserved.

Product specification Rev. 01 — 28 August 2000 8 of 15

Philips Semiconductors

10. Package outline

Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3 lead TO-220 'full pack'

PHX18NQ20T

N-channel FET

SOT186A

E
P

q

D

1

D

L

2

b

L

1

b

2

23

1

b

e

e

1

T

L

w M

1

A

A

1

j

K

Q

c

0 5 10 mm

scale

DIMENSIONS (mm are the original dimensions)

A

A

b

UNIT

mm

Notes

1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned.

2. Both recesses are ∅ 2.5 × 0.8 max. depth

OUTLINE

VERSION

SOT186A 3-lead TO-220F

4.6

4.0

1

2.9

2.5

b

1

1.1

0.9

0.9

0.7

IEC JEDEC EIAJ

b

1.4

1.2

c

2

0.7

0.4

D

15.8

15.2

D

1

6.5

6.3

REFERENCES

E

10.3

9.7

e

2.54

e

5.08

j

2.7

2.3

K

0.6

0.4

1

14.4

13.5

L

3.30

2.79

1

(1)

L

2

max.

3.2

3

3.0

EUROPEAN

PROJECTION

2.6

2.3

(2)

qQPL

T

3.0

2.5 0.4

2.6

ISSUE DATE

97-06-11
99-09-13

w

Fig 15. SOT186A.

9397 750 07452

Product specification Rev. 01 — 28 August 2000 9 of 15

© Philips Electronics N.V. 2000. All rights reserved.

Philips Semiconductors

11. Revision history

Table 7: Revision history

Rev Date CPCN Description

01 20000828 - Product specification.

PHX18NQ20T

N-channel FET

9397 750 07452

Product specification Rev. 01 — 28 August 2000 10 of 15

© Philips Electronics N.V. 2000. All rights reserved.

Philips Semiconductors

12. Data sheet status

PHX18NQ20T

N-channel FET

Datasheet status Product status Definition

Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may

change in any manner without notice.

Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips

Semiconductors reserves the right to make changes at any time without notice in order to improve design and
supply the best possible product.

Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any

time without notice in order to improve design and supply the best possible product.

[1] Please consult the most recently issued data sheet before initiating or completing a design.

13. Definitions

Short-form specification — The data in a short-form specification is

extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.

Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.

Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.

[1]

14. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specified.

9397 750 07452

© Philips Electronics N.V. 2000 All rights reserved.

Product specification Rev. 01 — 28 August 2000 11 of 15

Philips Semiconductors

PHX18NQ20T

N-channel FET

9397 750 07452

Product specification Rev. 01 — 28 August 2000 12 of 15

© Philips Electronics N.V. 2000. All rights reserved.

Philips Semiconductors

PHX18NQ20T

N-channel FET

9397 750 07452

Product specification Rev. 01 — 28 August 2000 13 of 15

© Philips Electronics N.V. 2000. All rights reserved.

Philips Semiconductors

PHX18NQ20T

Philips Semiconductors - a worldwide company

N-channel FET

Argentina: see South America
Australia: Tel. [phone], Fax. [phone]
Austria: Tel. [phone], Fax. [phone]
Belarus: Tel. [phone], Fax. [phone]
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Tel. [phone], Fax. [phone]
Canada: Tel. [phone]
China/Hong Kong: Tel. [phone], Fax. [phone]
Colombia: see South America
Czech Republic: see Austria
Denmark: Tel. [phone], Fax. [phone]
Finland: Tel. [phone], Fax. [phone]
France: Tel. [phone], Fax. [phone]
Germany: Tel. [phone], Fax. [phone]
Hungary: see Austria
India: Tel. [phone], Fax. [phone]
Indonesia: see Singapore
Ireland: Tel. [phone], Fax. [phone]
Israel: Tel. [phone], Fax. [phone]
Italy: Tel. [phone], Fax [phone]
Japan: Tel. [phone], Fax. [phone]
Korea: Tel. [phone], Fax. [phone]
Malaysia: Tel. [phone], Fax. [phone]
Mexico: Tel. [phone]
Middle East: see Italy

Netherlands: Tel. [phone], Fax. [phone]
New Zealand: Tel. [phone], Fax. [phone]
Norway: Tel. [phone], Fax. [phone]
Philippines: Tel. [phone], Fax. [phone]
Poland: Tel. [phone], Fax. [phone]
Portugal: see Spain
Romania: see Italy
Russia: Tel. [phone], Fax. [phone]
Singapore: Tel. [phone], Fax. [phone]
Slovakia: see Austria
Slovenia: see Italy
South Africa: Tel. [phone], Fax. [phone]
South America: Tel. [phone], Fax. [phone]
Spain: Tel. [phone], Fax. [phone]
Sweden: Tel. [phone], Fax. [phone]
Switzerland: Tel. [phone], Fax. [phone]
Taiwan: Tel. [phone], Fax. [phone]
Thailand: Tel. [phone], Fax. [phone]
Turkey: Tel. [phone], Fax. [phone]
Ukraine: Tel. [phone], Fax. [phone]
United Kingdom: Tel. [phone], Fax. [phone]
United States: Tel. [phone]
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: Tel. [phone], Fax. [phone]

For all other countries apply to: Philips Semiconductors,

Marketing Communications,
Building BE, P.O. Box 218, 5600 MD EINDHOVEN,
The Netherlands, Fax. [phone]

Internet: http://www.semiconductors.philips.com

(SCA70)

9397 750 07452

Product specification Rev. 01 — 28 August 2000 14 of 15

© Philips Electronics N.V. 2000. All rights reserved.

Philips Semiconductors

Contents

1 Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

4 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

5 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2

6 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

7 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

7.1 Transient thermal impedance . . . . . . . . . . . . . . 4

8 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

9 Isolation characteristics . . . . . . . . . . . . . . . . . . 8

10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11

13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

14 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

PHX18NQ20T

N-channel FET

© Philips Electronics N.V. 2000. Printed in The Netherlands

All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.

The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.

Date of release: 28 August 2000 Document order number: 9397 750 07452