Philips PHW10N60E Datasheet

Philips Semiconductors Product specification

PowerMOS transistors PHP10N60E
Avalanche energy rated

FEATURES SYMBOL QUICK REFERENCE DATA

• Repetitive Avalanche Rated

• Fast switching V

DSS

= 600 V

• Stable off-state characteristics

• High thermal cycling performance I

D

= 9.6 A

• Low thermal resistance

R

DS(ON)

≤ 0.75 Ω

GENERAL DESCRIPTION PINNING SOT78 (TO220AB)

N-channel, enhancement mode PIN DESCRIPTION
field-effect power transistor,
intendedforuse in off-line switched 1 gate
mode power supplies, T.V. and
computer monitor power supplies, 2 drain
d.c.tod.c.converters,motorcontrol
circuits and general purpose 3 source
switching applications.

case drain
The PHP10N60E is supplied in the
SOT78 (TO220AB) conventional
leaded package.

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DSS

Drain-source voltage Tj = 25 ˚C to 150˚C - 600 V

V

DGR

Drain-gate voltage Tj = 25 ˚C to 150˚C; RGS = 20 kΩ - 600 V

V

GS

Gate-source voltage - ± 30 V

I

D

Continuous drain current Tmb = 25 ˚C; VGS = 10 V - 9.6 A

Tmb = 100 ˚C; VGS = 10 V - 6.1 A

I

DM

Pulsed drain current Tmb = 25 ˚C - 38 A

P

D

Total dissipation Tmb = 25 ˚C - 167 W

Tj, T

stg

Operating junction and - 55 150 ˚C
storage temperature range

AVALANCHE ENERGY LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

E

AS

Non-repetitive avalanche Unclamped inductive load, IAS = 9.4 A; - 731 mJ
energy tp = 0.2 ms; Tj prior to avalanche = 25˚C;

VDD ≤ 50 V; RGS = 50 Ω; VGS = 10 V

E

AR

Repetitive avalanche energy1IAR = 9.6 A; tp = 2.5 µs; Tj prior to - 18 mJ

avalanche = 25˚C; RGS = 50 Ω; VGS = 10 V

IAS, I

AR

Repetitive and non-repetitive - 9.6 A
avalanche current

d

g

s

123

tab

1 pulse width and repetition rate limited by Tj max.

December 1998 1 Rev 1.000

Philips Semiconductors Product specification

PowerMOS transistors PHP10N60E
Avalanche energy rated

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R

th j-mb

Thermal resistance junction - - 0.75 K/W
to mounting base

R

th j-a

Thermal resistance junction - 60 - K/W
to ambient

ELECTRICAL CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

Drain-source breakdown VGS = 0 V; ID = 0.25 mA 600 - - V
voltage

∆V

(BR)DSS

/ Drain-source breakdown VDS = VGS; ID = 0.25 mA - 0.1 - %/K

∆T

j

voltage temperature
coefficient

R

DS(ON)

Drain-source on resistance VGS = 10 V; ID = 5 A - 0.68 0.75 Ω

V

GS(TO)

Gate threshold voltage VDS = VGS; ID = 0.25 mA 2.0 3.0 4.0 V

g

fs

Forward transconductance VDS = 30 V; ID = 5 A 4 6.5 - S

I

DSS

Drain-source leakage current VDS = 600 V; VGS = 0 V - 2 100 µA

VDS = 480 V; VGS = 0 V; Tj = 125 ˚C - 80 1000 µA

I

GSS

Gate-source leakage current VGS = ±30 V; VDS = 0 V - 10 200 nA

Q

g(tot)

Total gate charge ID = 10 A; V

DD

= 480 V; VGS = 10 V - 75 100 nC

Q

gs

Gate-source charge - 6.8 12 nC

Q

gd

Gate-drain (Miller) charge - 37 55 nC

t

d(on)

Turn-on delay time VDD = 300 V; RD = 30 Ω; - 11 - ns

t

r

Turn-on rise time RG = 5.6 Ω -32-ns

t

d(off)

Turn-off delay time - 98 - ns

t

f

Turn-off fall time - 37 - ns

L

d

Internal drain inductance Measured from tab to centre of die - 3.5 - nH

L

d

Internal drain inductance Measured from drain lead to centre of die - 4.5 - nH

L

s

Internal source inductance Measured from source lead to source - 7.5 - nH

bond pad

C

iss

Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 1295 - pF

C

oss

Output capacitance - 163 - pF

C

rss

Feedback capacitance - 86 - pF

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

S

Continuous source current Tmb = 25˚C - - 9.6 A
(body diode)

I

SM

Pulsed source current (body Tmb = 25˚C - - 38 A
diode)

V

SD

Diode forward voltage IS = 10 A; VGS = 0 V - - 1.2 V

t

rr

Reverse recovery time IS = 10 A; VGS = 0 V; dI/dt = 100 A/µs - 600 - ns

Q

rr

Reverse recovery charge - 6 - µC

December 1998 2 Rev 1.000

Philips Semiconductors Product specification

PowerMOS transistors PHP10N60E
Avalanche energy rated

Fig.1. Normalised power dissipation.

PD% = 100⋅PD/P

D 25 ˚C

= f(Tmb)

Fig.2. Normalised continuous drain current.

ID% = 100⋅ID/I

D 25 ˚C

= f(Tmb); conditions: VGS ≥ 10 V

Fig.3. Safe operating area. Tmb = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter t

p

Fig.4. Transient thermal impedance.

Z

th j-mb

= f(t); parameter D = tp/T

Fig.5. Typical output characteristics

.

ID = f(VDS); parameter V

GS

Fig.6. Typical on-state resistance

.

R

DS(ON)

= f(ID); parameter V

GS

0 20 40 60 80 100 120 140

Tmb / C

PD%

Normalised Power Derating

120
110
100

90
80
70
60
50
40
30
20
10

0

PHP10N60E

0.001

0.01

0.1

1

1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01

pulse width, tp (s)

Transient Thermal Impedance, Zth j-a (K/W)

D = 0.5

0.2

0.1

0.05

0.02

Single pulse

tp

D = tp/T

T

P

t

D

0 20 40 60 80 100 120 140

Tmb / C

ID%

Normalised Current Derating

120
110
100

90
80
70
60
50
40
30
20
10

0

PHP10N60E

0

1

2

3

4

5

6

7

8

012345

Drain-Source Voltage, VDS (V)

Drain Current, ID (A)

4 V

4.2 V

4.4 V

4.6 V

Tj = 25 C

VGS = 10 V

4.8 V

5 V

PHP10N60E

0.1

1

10

100

10 100 1000

Drain-Source Voltage, VDS (V)

Peak Pulsed Drain Current, IDM (A)

d.c.

100 ms

10 ms

RDS(on) = VDS/ ID

tp = 10 us

1 ms

100 us

PHP10N60E

0

0.2

0.4

0.6

0.8

1

1.2

1.4

012345678

Drain Current, ID (A)

Drain-Source On Resistance, RDS(on) (Ohms)

VGS = 10 V

4.2V

4.6V

4.8V

5V

Tj = 25 C

4 V

4.4V

December 1998 3 Rev 1.000