Philips PHU2N50E Datasheet
Philips Semiconductors Product specification
PowerMOS transistors PHU2N50E
Avalanche energy rated
FEATURES QUICK REFERENCE DATA
• Repetitive Avalanche Rated
• Fast switching V
• Stable off-state characteristics
• High thermal cycling performance I
• Low thermal resistance
• Extremely high dV/dt capability R
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor, intended for use in Compact Fluorescent Lamps (CFL)
andlowpowerballasts.ThePHU2N50Eiscompatiblewith self oscillating and IC driven circuits, includingtheUBA2021
ballast controller IC. Other applications include off line switched mode power supplies and D.C. to D.C. converters.
The PHU2N50E issupplied in the SOT533 (I-PAK) leaded package.
PINNING SYMBOL SOT533
= 500 V
DSS
= 2 A
D
DS(ON)
≤ 5 Ω
PIN DESCRIPTION
d
------------- --------------------------------1 gate
2 drain
3 source
tab drain
g
1
s
Top view
23
MBK915
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DSS
V
DGR
V
GS
I
D
I
DM
P
D
dV/dt Peak Diode Recovery Ids 2.0 A; dI/dt = 100 A/µs; - 5.2 V/ns
Tj, T
Drain-source voltage Tj = 25 ˚C to 150˚C - 500 V
Drain-gate voltage Tj = 25 ˚C to 150˚C; RGS = 20 kΩ - 500 V
Gate-source voltage - ± 30 V
Continuous drain current Tmb = 25 ˚C; VGS = 10 V - 2 A
Tmb = 100 ˚C; VGS = 10 V - 1.3 A
Pulsed drain current Tmb = 25 ˚C - 8 A
Total dissipation Tmb = 25 ˚C - 50 W
voltage slope. (See fig. 19) Vs = 8V; Tj < T
Operating junction and - 55 150 ˚C
stg
jmax
storage temperature range
May 1999 1 Rev 1.000
Philips Semiconductors Product specification
PowerMOS transistors PHU2N50E
Avalanche energy rated
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
E
AS
E
AR
IAS, I
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
Non-repetitive avalanche Unclamped inductive load, IAS = 1.26 A; - 82 mJ
energy tp = 0.2 ms; Tj prior to avalanche = 25˚C;
VDD ≤ 50 V; RGS = 50 Ω; VGS = 10 V; refer
to fig:17
Repetitive avalanche energy1IAR = 2 A; tp = 2.5 µs; Tj prior to - 3.3 mJ
avalanche = 25˚C; RGS = 50 Ω; VGS = 10 V;
refer to fig:18
Repetitive and non-repetitive - 2 A
AR
avalanche current
Thermal resistance junction - - 2.5 K/W
to mounting base
Thermal resistance junction In free air - 70 - K/W
to ambient
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
∆V
∆T
R
DS(ON)
V
GS(TO)
g
fs
I
DSS
I
GSS
Q
g(tot)
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
d
L
s
C
iss
C
oss
C
rss
(BR)DSS
j
Drain-source breakdown VGS = 0 V; ID = 0.25 mA 500 - - V
voltage
/ Drain-source breakdown VDS = VGS; ID = 0.25 mA - 0.1 - %/K
voltage temperature
coefficient
Drain-source on resistance VGS = 10 V; ID = 1 A - 3.1 5 Ω
Gate threshold voltage VDS = VGS; ID = 0.25 mA 2.0 3.0 4.0 V
Forward transconductance VDS = 30 V; ID = 1 A 0.5 1.3 - S
Drain-source leakage current VDS = 500 V; VGS = 0 V - 1 25 µA
VDS = 500 V; VGS = 0 V; Tj = 125 ˚C - 77 250 µA
Gate-source leakage current VGS = ±30 V; VDS = 0 V - 10 200 nA
Total gate charge ID = 2 A; V
= 400 V; VGS = 10 V - 20 25 nC
DD
Gate-source charge - 2 3 nC
Gate-drain (Miller) charge - 12 15 nC
Turn-on delay time VDD = 250 V; RD = 120 Ω; - 10 - ns
Turn-on rise time RG = 24 Ω -20-ns
Turn-off delay time - 60 - ns
Turn-off fall time - 20 - ns
Internal drain inductance Measured from tab to centre of die - 3.5 - nH
Internal source inductance Measured from source lead to source - 7.5 - nH
bond pad
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 236 - pF
Output capacitance - 40 - pF
Feedback capacitance - 22 - pF
1 pulse width and repetition rate limited by Tj max.
May 1999 2 Rev 1.000
Philips Semiconductors Product specification
PowerMOS transistors PHU2N50E
Avalanche energy rated
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous source current Tmb = 25˚C - - 2 A
(body diode)
Pulsed source current (body Tmb = 25˚C - - 8 A
diode)
Diode forward voltage IS = 2 A; VGS = 0 V - - 1.2 V
Reverse recovery time IS = 2 A; VGS = 0 V; dI/dt = 100 A/µs - 300 - ns
Reverse recovery charge - 2.1 - µC
May 1999 3 Rev 1.000
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