Philips PHU11NQ10T User Manual
M3D445
1. Description
2. Features
PHU11NQ10T
TrenchMOS™ standard level FET
Rev. 01 — 28 May 2002 Product data
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
PHU11NQ10T in SOT533 (I-pak).
■ TrenchMOS™ technology
■ Fast switching
■ Low on-state resistance.
3. Applications
■ Relay driver
■ High speed line driver
■ General purpose switch.
4. Pinning information
Table 1: Pinning - SOT533, simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
2 drain (d)
3 source (s)
tab drain (d)
1
23
Top view
MBK915
SOT533
g
MBB076
d
s
Philips Semiconductors
PHU11NQ10T
TrenchMOS™ standard level FET
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
V
I
D
P
T
R
DS
tot
j
DSon
drain-source voltage (DC) 25 °C ≤ Tj≤ 175 °C - 100 V
drain current (DC) Tmb=25°C; VGS= 10 V - 10.9 A
total power dissipation Tmb=25°C - 57.7 W
junction temperature - 175 °C
drain-source on-state resistance VGS= 10 V; ID= 9 A; Tj=25°C 150 180 mΩ
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
I
SM
Avalanche ruggedness
E
DS(AL)S
drain-source voltage (DC) 25 °C ≤ Tj≤ 175 °C - 100 V
drain-gate voltage (DC) 25 °C ≤ Tj≤ 175 °C; RGS=20kΩ - 100 V
gate-source voltage (DC) - ±20 V
drain current (DC) Tmb=25°C; VGS=10V;Figure 2 and 3 - 10.9 A
= 100 °C; VGS=10V;Figure 2 - 7.7 A
T
mb
peak drain current Tmb=25°C; pulsed; tp≤ 10 µs; Figure 3 - 43.6 A
total power dissipation Tmb=25°C; Figure 1 - 57.7 W
storage temperature −55 +175 °C
junction temperature −55 +175 °C
source (diode forward) current (DC) Tmb=25°C - 10.9 A
peak source (diode forward) current Tmb=25°C; tp≤ 10 µs - 43.6 A
non-repetitive drain-source
avalanche energy
unclamped inductive load; ID= 3.2 A;
= 0.2 ms; VDD≤ 15 V; RGS=50Ω;
t
p
= 10 V; starting Tj=25°C
V
GS
-35mJ
9397 750 09528
Product data Rev. 01 — 28 May 2002 2 of 12
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Philips Semiconductors
03aa16
0
40
80
120
0 50 100 150 200
Tmb (°C)
P
der
(%)
PHU11NQ10T
TrenchMOS™ standard level FET
P
P
der
tot
----------------------
P
tot 25 C°()
100%×= I
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
2
10
120
I
der
(%)
80
40
0
0 50 100 150 200
I
D
der
------------------ -
I
D25C°()
100%×=
03aa24
Tmb (°C)
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
03ai94
I
D
(A)
10
1
-1
10
1 10 10
Limit R
DSon
= V
DS
/ I
D
tp = 10 µs
100 µs
DC
1 ms
2
VDS (V)
10
3
Tmb=25°C; IDM is single pulse; VGS = 10V.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 09528
Product data Rev. 01 — 28 May 2002 3 of 12
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Philips Semiconductors
PHU11NQ10T
TrenchMOS™ standard level FET
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
R
th(j-a)
thermal resistance from junction to mounting base Figure 4 - - 2.6 K/W
thermal resistance from junction to ambient SOT533 package; vertical in still air - 70 - K/W
7.1 Transient thermal impedance
p
tp (s)
03ai93
δ =
T
Z
th(j-mb)
(K/W)
10
1
10
10
δ = 0.5
0.2
0.1
0.05
0.02
-1
single pulse
-2
10
-5
10
-4
10
-3
10
P
t
-2
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
t
p
T
t
-1
10
9397 750 09528
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data Rev. 01 — 28 May 2002 4 of 12
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