Philips PHT8N06T Datasheet
Philips Semiconductors Product specification
TrenchMOS transistor PHT8N06T
Standard level FET
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT
level field-effectpowertransistorina
plastic envelope suitable for surface V
mounting. Using ’trench’ technolgy I
thedevice features very low on-state P
resistance and has integral zener T
diodes giving ESD protection. It is R
DS
D
tot
j
DS(ON)
intended for use in DC-DC resistance VGS = 10 V
converters and general purpose
switching applications.
PINNING - SOT223 PIN CONFIGURATION SYMBOL
Drain-source voltage 55 V
Drain current 7.5 A
Total power dissipation 1.8 W
Junction temperature 150 ˚C
Drain-source on-state 80 mΩ
PIN DESCRIPTION
4
d
1 gate
2 drain
3 source
4 drain (tab)
1
23
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
±V
I
D
I
D
I
D
I
DM
P
P
T
DS
DGR
tot
tot
stg
GS
, T
j
Drain-source voltage - - 55 V
Drain-gate voltage RGS = 20 kΩ -55V
Gate-source voltage - - 20 V
Drain current (DC) Tsp = 25 ˚C - 7.5 A
Drain current (DC) On PCB in Fig.2 - 3.5 A
T
= 25 ˚C
amb
Drain current (DC) On PCB in Fig.2 - 2.2 A
T
= 100 ˚C
amb
Drain current (pulse peak value) Tsp = 25 ˚C - 40 A
Total power dissipation Tsp = 25 ˚C - 8.3 W
Total power dissipation On PCB in Fig.2 - 1.8 W
T
= 25 ˚C
amb
Storage & operating temperature - - 55 150 ˚C
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
December 1997 1 Rev 1.100
Electrostatic discharge capacitor Human body model - 2 kV
voltage (100 pF, 1.5 kΩ)
Philips Semiconductors Product specification
TrenchMOS transistor PHT8N06T
Standard level FET
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-sp
R
th j-amb
STATIC CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GS(TO)
I
DSS
I
GSS
±V
(BR)GSS
R
DS(ON)
From junction to solder point Mounted on any PCB 12 15 K/W
From junction to ambient Mounted on PCB of Fig.2 - 70 K/W
Drain-source breakdown VGS = 0 V; ID = 0.25 mA 55 - - V
voltage Tj = -55˚C 50 - - V
Gate threshold voltage VDS = VGS; ID = 1 mA 2 3 4 V
Tj = 150˚C 1.2 - - V
Zero gate voltage drain current VDS = 55 V; VGS = 0 V; - 0.05 10 µA
Tj = 150˚C - - 100 µA
Gate source leakage current VGS = ±10 V - 0.04 1 µA
Tj = 150˚C - - 10 µA
Gate-source breakdown IG = ±1 mA; 16 - - V
voltage
Drain-source on-state VGS = 10 V; ID = 5 A - 65 80 mΩ
resistance Tj = 150˚C - - 148 mΩ
DYNAMIC CHARACTERISTICS
Tmb = 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
g
Q
Q
Q
C
C
C
t
t
t
t
fs
g(tot)
gs
gd
iss
oss
rss
d on
r
d off
f
Forward transconductance VDS = 25 V; ID = 5 A; Tj = 25˚C 1 - - S
Total gate charge ID = 7 A; V
= 44 V; VGS = 10 V - 13.5 - nC
DD
Gate-source charge - 2.5 - nC
Gate-drain (Miller) charge - 5.5 - nC
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 365 500 pF
Output capacitance - 110 135 pF
Feedback capacitance - 60 85 pF
Turn-on delay time VDD = 30 V; ID = 7 A; - 9 14 ns
Turn-on rise time VGS = 10 V; RG = 10 Ω; - 15 25 ns
Turn-off delay time - 18 27 ns
Turn-off fall time Tj = 25˚C - 12 18 ns
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = -55 to 175˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
DR
I
DRM
V
t
rr
Q
SD
rr
Continuous reverse drain Tsp = 25˚C - - 7.5 A
current
Pulsed reverse drain current Tsp = 25˚C - - 40 A
Diode forward voltage IF = 5 A; VGS = 0 V - 0.85 1.1 V
Reverse recovery time IF = 5 A; -dIF/dt = 100 A/µs; - 38 - ns
Reverse recovery charge VGS = -10 V; VR = 30 V - 0.2 - µC
December 1997 2 Rev 1.100
Philips Semiconductors Product specification
TrenchMOS transistor PHT8N06T
Standard level FET
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
W
DSS
Drain-source non-repetitive ID = 2.5 A; VDD ≤ 25 V; - - 30 mJ
unclamped inductive turn-off VGS = 10 V; RGS = 50 Ω; Tsp = 25 ˚C
energy
December 1997 3 Rev 1.100
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