Philips PHT6NQ10T Datasheet
Philips Semiconductors Product specification
N-channel TrenchMOS transistor PHT6NQ10T
FEATURES SYMBOL QUICK REFERENCE DATA
• ’Trench’ technology
d
• Low on-state resistance V
• Fast switching
• Low thermal resistance I
g
R
DS(ON)
s
GENERAL DESCRIPTION PINNING SOT223
N-channel enhancement mode PIN DESCRIPTION
field-effect transistor in a plastic
envelope using ’trench’ 1 gate
technology.
2 drain
Applications:-
• Motor and relay drivers 3 source
• d.c. to d.c. converters
4 drain (tab)
The PHT6NQ10Tis supplied in the
SOT223 surface mounting
package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
= 100 V
DSS
= 6.5 A
D
≤ 90 mΩ
1
4
23
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DSS
V
DGR
V
GS
I
D
I
D
I
DM
P
D
Tj, T
Drain-source voltage Tj = 25 ˚C to 150˚C - 100 V
Drain-gate voltage Tj = 25 ˚C to 150˚C; RGS = 20 kΩ - 100 V
Gate-source voltage - ± 20 V
Continuous drain current (dc) Tsp = 25 ˚C - 6.5 A
T
= 25 ˚C - 3 A
amb
Continuous drain current (dc) Tsp = 100 ˚C - 4.1 A
T
= 100 ˚C - 1.9 A
amb
Pulsed drain current - 26 A
Total power dissipation Tsp = 25 ˚C - 8.3 W
T
= 25 ˚C - 1.8 W
Operating junction and - 65 150 ˚C
stg
amb
storage temperature
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
R
th j-sp
th j-amb
Thermal resistance junction to surface mounted, FR4 12 15 K/W
solder point board
Thermal resistance junction to surface mounted, FR4 70 - K/W
ambient board
August 1999 1 Rev 1.000
Philips Semiconductors Product specification
N-channel TrenchMOS transistor PHT6NQ10T
ELECTRICAL CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GS(TO)
R
DS(ON)
I
GSS
I
DSS
Q
g(tot)
Q
gs
Q
gd
t
d on
t
r
t
d off
t
f
L
d
L
s
C
iss
C
oss
C
rss
Drain-source breakdown VGS = 0 V; ID = 0.25 mA; 100 - - V
voltage Tj = -55˚C 89 - - V
Gate threshold voltage VDS = VGS; ID = 1 mA 2 3 4 V
Tj = 150˚C 1.2 - - V
Tj = -55˚C - 6 V
Drain-source on-state VGS = 10 V; ID = 3 A - 57 90 mΩ
resistance Tj = 150˚C - - 216 mΩ
Gate source leakage current VGS = ±10 V; VDS = 0 V - 10 100 nA
Zero gate voltage drain VDS = 100 V; VGS = 0 V; - 0.05 10 µA
current Tj = 150˚C - - 500 µA
Total gate charge ID = 6 A; V
= 80 V; VGS = 10 V - 21 - nC
DD
Gate-source charge - 2.5 - nC
Gate-drain (Miller) charge - 8.2 - nC
Turn-on delay time VDD = 50 V; RD = 8.2 Ω;-6-ns
Turn-on rise time VGS = 10 V; RG = 5.6 Ω -15-ns
Turn-off delay time Resistive load - 20 - ns
Turn-off fall time - 10 - ns
Internal drain inductance Measured tab to centre of die - 2.5 - nH
Internal source inductance Measured from source lead to source - 5 - nH
bond pad
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 633 - pF
Output capacitance - 103 - pF
Feedback capacitance - 61 - pF
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous source current Tsp = 25 ˚C - - 5.5 A
(body diode)
Pulsed source current (body - - 26 A
diode)
Diode forward voltage IF = 6 A; VGS = 0 V - 0.8 1.2 V
Reverse recovery time IF = 6 A; -dIF/dt = 100 A/µs; - 55 - ns
Reverse recovery charge VGS = 0 V; VR = 25 V - 135 - nC
August 1999 2 Rev 1.000
Philips Semiconductors Product specification
N-channel TrenchMOS transistor PHT6NQ10T
Normalised Power Derating, PD (%)
100
90
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150
Solder Point temperature, Tsp (C)
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/P
Normalised Current Derating, ID (%)
100
90
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150
Solder Point temperature, Tsp (C)
D 25 ˚C
= f(Tsp)
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/I
= f(Tsp); VGS ≥ 10 V
D 25 ˚C
Transient thermal impedance, Zth j-sp (K/W)
100
D = 0.5
10
0.2
0.1
1
0.05
0.02
0.1
single pulse
0.01
1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01
Pulse width, tp (s)
P
D
tp
D = tp/T
T
Fig.4. Transient thermal impedance.
Z
= f(t); parameter D = tp/T
th j-sp
Drain Current, ID (A)
6
VGS = 10V
8 V
5
6 V
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
5.4 V
Tj = 25 C
Drain-Source Voltage, VDS (V)
5.2 V
5 V
4.8 V
4.6 V
4.4 V
Fig.5. Typical output characteristics, Tj = 25 ˚C
ID = f(VDS)
.
Peak Pulsed Drain Current, IDM (A)
100
RDS(on) = VDS/ ID
10
1
0.1
0.01
1 10 100 1000
D.C.
Drain-Source Voltage, VDS (V)
tp = 10 us
100 us
1 ms
10 ms
100 ms
Fig.3. Safe operating area
ID & IDM = f(VDS); IDM single pulse; parameter t
p
Drain-Source On Resistance, RDS(on) (Ohms)
0.2
4.6V
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
Tj = 25 C
0
0123456
4.8V
Drain Current, ID (A)
5 V
5.2 V
5.4 V
6V
8 V
VGS = 10V
Fig.6. Typical on-state resistance, Tj = 25 ˚C
R
= f(ID)
DS(ON)
.
August 1999 3 Rev 1.000
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