Philips PHT4NQ10T Datasheet
1. Description
2. Features
PHT4NQ10T
N-channel enhancement mode field-effect transistor
Rev. 01 — 31 July 2000 Product specification
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
PHT4NQ10T in SOT223.
■ TrenchMOS™ technology
■ Very fast switching
■ Surface mount package.
3. Applications
■ Primary side switch in DC to DC converters
■ High speed line driver
c
c
■ Fast general purpose switch.
4. Pinning information
Table 1: Pinning - SOT223, simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
2 drain (d)
3 source (g)
4 drain (d)
4
03ab45
123
SOT223 N-channel MOSFET
d
g
03ab30
s
1. TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors
PHT4NQ10T
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
V
I
P
T
R
DS
D
tot
j
DSon
drain-source voltage (DC) Tj=25to150°C − 100 V
drain current (DC) Tsp=25°C; VGS=10V − 3.5 A
total power dissipation Tsp=25°C − 6.9 W
junction temperature − 150 °C
drain-source on-state resistance VGS= 10 V; ID= 1.75 A 200 250 mΩ
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
I
SM
Avalanche ruggedness
E
AS
I
AS
drain-source voltage (DC) Tj=25to150°C − 100 V
drain-gate voltage (DC) Tj=25to150°C; RGS=20kΩ−100 V
gate-source voltage (DC) −±20 V
drain current (DC) Tsp=25°C; VGS=10V;
− 3.5 A
Figure 2 and 3
T
= 100 °C; VGS=10V;Figure 2 − 2.2 A
sp
peak drain current Tsp=25°C; pulsed; tp≤ 10 µs;
− 14 A
Figure 3
total power dissipation Tsp=25°C; Figure 1 − 6.9 W
storage temperature −65 +150 °C
operating junction temperature −65 +150 °C
source (diode forward) current (DC) Tsp=25°C − 3.5 A
peak source (diode forward) current Tsp=25°C; pulsed; tp≤ 10 µs − 14 A
non-repetitive avalanche energy unclamped inductive load; ID= 3.5 A;
= 0.2 ms; VDD≤ 15 V; RGS=50Ω;
t
p
= 10 V; starting Tj=25°C;
V
GS
− 45 mJ
Figure 4
non-repetitive avalanche current unclamped inductive load; VDD≤ 15 V;
=50Ω; VGS=10V;Figure 4
R
GS
− 3.5 A
9397 750 07337
Product specification Rev. 01 — 31 July 2000 2 of 13
© Philips Electronics N.V. 2000. All rights reserved.
Philips Semiconductors
PHT4NQ10T
N-channel enhancement mode field-effect transistor
120
P
der
(%)
100
80
60
40
20
0
0 25 50 75 100 125 150 175
P
P
der
tot
----------------------
P
tot 25 C°()
100%×=
03aa17
Tsp (oC)
Fig 1. Normalized total power dissipation as a
function of solder point temperature.
2
10
I
D
(A)
10
1
-1
10
R
DSon=VDS/ID
D.C.
03aa88
tp=10µs
100µs
1ms
10 ms
100 ms
120
I
der
(%)
100
80
60
40
20
0
0 25 50 75 100 125 150 175
03aa25
Tsp (oC)
VGS≥ 10 V
I
I
der
D
------------------ -
I
D25C°()
100%×=
Fig 2. Normalized continuous drain current as a
function of solder point temperature.
10
I
AS
(A)
1
Tjprior to avalanche = 125oC
03aa97
25oC
-1
-2
10
11010210
VDS(V)
3
10
-2
10
-1
10
110
tp(ms)
Tsp=25°C; IDM is single pulse. Unclamped inductive load; VDD≤ 15 V; RGS=50Ω;
VGS= 10 V; starting Tj=25°C and 125°C.
Fig 3. Safe operating area; continuous and peak drain
currents as a function of drain-source voltage.
9397 750 07337
Fig 4. Non-repetitive avalanche ruggedness current
as a function of pulse duration.
© Philips Electronics N.V. 2000. All rights reserved.
Product specification Rev. 01 — 31 July 2000 3 of 13
Philips Semiconductors
PHT4NQ10T
N-channel enhancement mode field-effect transistor
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter Conditions Value Unit
R
th(j-sp)
R
th(j-a)
thermal resistance from junction to solder
point
thermal resistance from junction to ambient mounted on a printed circuit board;
7.1 Transient thermal impedance
mounted on a metal clad substrate;
Figure 5
minimum footprint
18 K/W
150 K/W
03aa87
t
p
δ =
T
t
T
110
tp (s)
Z
th(j-sp)
(K/W)
2
10
δ = 0.5
10
0.2
0.1
1
0.05
0.02
-1
10
single pulse
-2
10
-5
10
-4
10
-3
10
-2
10
P
t
p
-1
10
Mounted on a metal clad substrate.
Fig 5. Transient thermal impedance from junction to solder point as a function of
pulse duration.
9397 750 07337
© Philips Electronics N.V. 2000. All rights reserved.
Product specification Rev. 01 — 31 July 2000 4 of 13
Loading...