Philips PHT4NQ10LT Datasheet

M3D087

1. Description

2. Features

PHT4NQ10LT

N-channel enhancement mode field-effect transistor

Rev. 01 — 11 September 2000 Product specification

N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.

Product availability:

PHT4NQ10LT in SOT223.

■ TrenchMOS™ technology

■ Fast switching

■ Low on-state resistance

■ Surface mount package

■ Logic level compatible.

3. Applications

c

c

■ Primary side switch in DC to DC convertors

■ High speed driver

■ Fast general purpose switch.

4. Pinning information

Table 1: Pinning - SOT223, simplified outline and symbol

Pin Description Simplified outline Symbol

1 gate (g)
2 drain (d)
3 source (s)
4 drain (d)

123

Top view

SOT223

1. TrenchMOS is a trademark of Royal Philips Electronics

4

MSB002 - 1

g

MBB076

d

s

Philips Semiconductors

PHT4NQ10LT

N-channel enhancement mode field-effect transistor

5. Quick reference data

Table 2: Quick reference data

Symbol Parameter Conditions Typ Max Unit

V
I
P
T
R

DS

D

tot
j
DSon

drain-source voltage (DC) Tj=25to150°C − 100 V
drain current (DC) Tsp=25°C; VGS=5V − 3.5 A
total power dissipation Tsp=25°C − 6.9 W
junction temperature − 150 °C
drain-source on-state resistance VGS=5V; ID= 1.75 A 200 250 mΩ

6. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

DGR

V

GS

I

D

I

DM

P

tot

T

stg

T

j

Source-drain diode

I

S

I

SM

Avalanche ruggedness

E

AS

I

AS

drain-source voltage (DC) Tj=25to150°C − 100 V
drain-gate voltage (DC) Tj=25to150°C; RGS=20kΩ−100 V
gate-source voltage (DC) −±16 V
drain current (DC) Tsp=25°C; VGS=5V;Figure 2 and 3 − 3.5 A

= 100 °C; VGS=5V; − 2.2 A

T

sp

peak drain current Tsp=25°C; pulsed; tp≤ 10 µs; Figure 3 − 14 A
total power dissipation Tsp=25°C; Figure 1 − 6.9 W
storage temperature −65 +150 °C
operating junction temperature −65 +150 °C

source (diode forward) current (DC) Tsp=25°C − 3.5 A
peak source (diode forward) current Tsp=25°C; tp≤ 10 µs − 14 A

non-repetitive avalanche energy unclamped inductive load; ID= 3.5 A;

= 0.2 ms; VDD≤ 15 V; RGS=50Ω;

t

p

= 5 V; starting Tj=25°C; Figure 4

V

GS

non-repetitive avalanche current unclamped inductive load; VDD≤ 15 V;

=50Ω; VGS=5V;Figure 4

R

GS

− 45 mJ

− 3.5 A

9397 750 07342

Product specification Rev. 01 — 11 September 2000 2 of 13

© Philips Electronics N.V. 2000. All rights reserved.

Philips Semiconductors

PHT4NQ10LT

N-channel enhancement mode field-effect transistor

120

P

der

(%)

100

80

60

40

20

0

0 25 50 75 100 125 150 175

P

P

der

tot

----------------------

P

tot 25 C°()

100%×=

03aa17

Tsp (oC)

Fig 1. Normalized total power dissipation as a

function of solder point temperature.

03ac48

tp = 10 µs

100 µs

1 ms
10 ms

100 ms

(A)

2

10
I

R

P

DSon

= VDS/ I

D.C.

δ

=

D

t

p

T

D

10

1

-1

10

120

I

der

(%)

100

80

60

40

20

0

0 25 50 75 100 125 150 175

03aa25

Tsp (oC)

VGS≥ 5V

I

I

der

D

------------------ -

I

D25C°()

100%×=

Fig 2. Normalized continuous drain current as a

function of solder point temperature.

03ac92

25ºC

I
(A)

10

AS

1

Tjprior to avalanche = 125ºC

t

t

p

-2

10

T

11010210

3

V

DS

-1

10

-2

10

-1

10

110

t

(ms)

p

Tsp=25°C; IDM is single pulse Unclamped inductive load; VDD≤ 15 V; RGS=50Ω;

VGS= 5 V; starting Tj=25°C and 125 °C.

Fig 3. Safe operatingarea; continuous and peak drain

currents as a function of drain-source voltage.

9397 750 07342

Fig 4. Non-repetitive avalanche ruggedness current

as a function of pulse duration.

© Philips Electronics N.V. 2000. All rights reserved.

Product specification Rev. 01 — 11 September 2000 3 of 13

Philips Semiconductors

PHT4NQ10LT

N-channel enhancement mode field-effect transistor

7. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter Conditions Value Unit

R

th(j-sp)

R

th(j-a)

thermal resistance from junction to solder point mounted on a metal clad substrate; Figure 5 18 K/W
thermal resistance from junction to ambient mounted on a printed-circuit board;

150 K/W

minimum footprint

7.1 Transient thermal impedance

03ac84

t

p

δ

=

T

t

p

110

t

T

t

(s)

p

Z

th(j-sp)

(K/W)

2

10

10

δ

= 0.5

0.2

0.1

1

0.05

0.02

-1

10

single pulse

-2

10

-5

10

-4

10

-3

10

-2

10

10

P

-1

Tsp=25°C

Fig 5. Transient thermal impedance from junction to solder point as a function of

pulse duration.

9397 750 07342

© Philips Electronics N.V. 2000. All rights reserved.

Product specification Rev. 01 — 11 September 2000 4 of 13