Philips PHT2NQ10T Datasheet

M3D087

1. Description

2. Features

3. Applications

PHT2NQ10T

N-channel TrenchMOS transistor

Rev. 01 — 16 October 2001 Product data

N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.

Product availability:

PHT2NQ10T in SOT223

■ TrenchMOS™ technology

■ Fast switching

■ Surface mount package.

■ Primary side switch in DC to DC converters

■ High speed driver

■ Fast, general purpose switch.

4. Pinning information

Table 1: Pinning - SOT223, simplified outline and symbol

Pin Description Simplified outline Symbol

1 gate (g)
2 drain (d)
3 source (s)
4 drain (d)

Top view

4

123

SOT223

MSB002 - 1

g

MBB076

d

s

1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.

Philips Semiconductors

PHT2NQ10T

N-channel TrenchMOS transistor

5. Quick reference data

Table 2: Quick reference data

Symbol Parameter Conditions Typ Max Unit

V
I

D

P
T
R

DS

tot
j
DSon

drain-source voltage (DC) 25°C ≤ to ≤ 150 °C − 100 V
drain current (DC) Tsp=25°C; VGS=10V − 2.5 A
total power dissipation Tsp=25°C − 6.25 W
junction temperature − 150 °C
drain-source on-state resistance VGS= 10 V; ID= 1.75 A 315 430 mΩ

6. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

DGR

V

GS

I

D

I

DM

P

tot

T

stg

T

j

Source-drain diode

I

S

I

SM

Avalanche ruggedness

E

AS

I

AS

drain-source voltage (DC) 25°C ≤ to ≤ 150 °C − 100 V
drain-gate voltage (DC) 25°C ≤ to ≤ 150 °C; RGS=20kΩ−100 V
gate-source voltage (DC) −±20 V
drain current (DC) Tsp=25°C; VGS=10V;Figure 2 and 3 − 2.5 A

= 100 °C; VGS=10V; − 1.6 A

T

sp

peak drain current Tsp=25°C; pulsed; tp≤ 10 µs; Figure 3 − 10 A
total power dissipation Tsp=25°C; Figure 1 − 6.25 W
storage temperature −65 +150 °C
operating junction temperature −65 +150 °C

source (diode forward) current (DC) Tsp=25°C − 2.5 A
peak source (diode forward) current Tsp=25°C; tp≤ 10 µs − 10 A

non-repetitive avalanche energy unclamped inductive load; ID=2.5 A;

= 0.2 ms; VDD≤ 15 V; RGS=50Ω;

t

p

= 10 V; starting Tj=25°C; Figure 4

V

GS

non-repetitive avalanche current unclamped inductive load; VDD≤ 15 V;

=50Ω; VGS=10V;Figure 4

R

GS

− 32 mJ

− 2.5 A

9397 750 08918

Product data Rev. 01 — 16 October 2001 2 of 12

© Koninklijke Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

PHT2NQ10T

N-channel TrenchMOS transistor

120

P

der

(%)

80

40

0

0 50 100 150 200

P

P

der

tot

----------------------

P

tot 25 C°()

100%×=

03aa17

T

(oC)

sp

Fig 1. Normalized total power dissipation as a

function of solder point temperature.

10
I

D

(A)

10

2

R

= VDS/ I

DSon

D

03ag27

tp = 10 µs

120

I

der

(%)

80

40

0

0 50 100 150 200

03aa25

(oC)

T

sp

VGS≥ 10 V

I

D

I

------------------ -

der

I

D25C°()

100%×=

Fig 2. Normalized continuous drain current as a

function of solder point temperature.

03ag34

I

AS

(A)

10

1

-1

10

-2

10

1 10 10

DC

100 µs

1 ms

10 ms
100 ms

2

1

Tj prior to avalanche = 125 ºC

-1

10

3

10

(V)

V

DS

10

-2

10

-1

25 ºC

1 10

(ms)

t

p

Tsp=25°C; IDM is single pulse. Unclamped inductive load; VDD≤ 15 V; RGS=50Ω;

VGS= 10 V; starting Tj=25°C and 125 °C.

Fig 3. Safe operatingarea; continuous and peak drain

currents as a function of drain-source voltage.

9397 750 08918

Fig 4. Non-repetitive avalanche ruggedness current

as a function of pulse duration.

© Koninklijke Philips Electronics N.V. 2001. All rights reserved.

Product data Rev. 01 — 16 October 2001 3 of 12

Philips Semiconductors

PHT2NQ10T

N-channel TrenchMOS transistor

7. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter Conditions Value Unit

R

th(j-sp)

R

th(j-a)

thermal resistance from junction to solder point mounted on a metal clad substrate; Figure 5 20 K/W
thermal resistance from junction to ambient mounted on a printed-circuit board;

150 K/W

minimum footprint

7.1 Transient thermal impedance

03ag26

t

p

δ =

T

t

T

t

(s)

p

Z

th(j-sp)

(K/W)

10

10

1

10

2

δ = 0.5

0.2

0.1

0.05

0.02

-1

-5

10

single pulse

10

-4

10

-3

10

-2

10

-1

P

t

p

1 10

Tsp=25°C

Fig 5. Transient thermal impedance from junction to solder point as a function of pulse duration.

9397 750 08918

© Koninklijke Philips Electronics N.V. 2001. All rights reserved.

Product data Rev. 01 — 16 October 2001 4 of 12