Philips PHT2NQ10T Datasheet

M3D087

1. Description

2. Features

3. Applications

PHT2NQ10T

N-channel TrenchMOS transistor

Rev. 01 — 16 October 2001 Product data

N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.

Product availability:

PHT2NQ10T in SOT223

■ TrenchMOS™ technology

■ Fast switching

■ Surface mount package.

■ Primary side switch in DC to DC converters

■ High speed driver

■ Fast, general purpose switch.

4. Pinning information

Table 1: Pinning - SOT223, simplified outline and symbol

Pin Description Simplified outline Symbol

1 gate (g)
2 drain (d)
3 source (s)
4 drain (d)

Top view

4

123

SOT223

MSB002 - 1

g

MBB076

d

s

1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.

Philips Semiconductors

PHT2NQ10T

N-channel TrenchMOS transistor

5. Quick reference data

Table 2: Quick reference data

Symbol Parameter Conditions Typ Max Unit

V
I

D

P
T
R

DS

tot
j
DSon

drain-source voltage (DC) 25°C ≤ to ≤ 150 °C − 100 V
drain current (DC) Tsp=25°C; VGS=10V − 2.5 A
total power dissipation Tsp=25°C − 6.25 W
junction temperature − 150 °C
drain-source on-state resistance VGS= 10 V; ID= 1.75 A 315 430 mΩ

6. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

DGR

V

GS

I

D

I

DM

P

tot

T

stg

T

j

Source-drain diode

I

S

I

SM

Avalanche ruggedness

E

AS

I

AS

drain-source voltage (DC) 25°C ≤ to ≤ 150 °C − 100 V
drain-gate voltage (DC) 25°C ≤ to ≤ 150 °C; RGS=20kΩ−100 V
gate-source voltage (DC) −±20 V
drain current (DC) Tsp=25°C; VGS=10V;Figure 2 and 3 − 2.5 A

= 100 °C; VGS=10V; − 1.6 A

T

sp

peak drain current Tsp=25°C; pulsed; tp≤ 10 µs; Figure 3 − 10 A
total power dissipation Tsp=25°C; Figure 1 − 6.25 W
storage temperature −65 +150 °C
operating junction temperature −65 +150 °C

source (diode forward) current (DC) Tsp=25°C − 2.5 A
peak source (diode forward) current Tsp=25°C; tp≤ 10 µs − 10 A

non-repetitive avalanche energy unclamped inductive load; ID=2.5 A;

= 0.2 ms; VDD≤ 15 V; RGS=50Ω;

t

p

= 10 V; starting Tj=25°C; Figure 4

V

GS

non-repetitive avalanche current unclamped inductive load; VDD≤ 15 V;

=50Ω; VGS=10V;Figure 4

R

GS

− 32 mJ

− 2.5 A

9397 750 08918

Product data Rev. 01 — 16 October 2001 2 of 12

© Koninklijke Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

PHT2NQ10T

N-channel TrenchMOS transistor

120

P

der

(%)

80

40

0

0 50 100 150 200

P

P

der

tot

----------------------

P

tot 25 C°()

100%×=

03aa17

T

(oC)

sp

Fig 1. Normalized total power dissipation as a

function of solder point temperature.

10
I

D

(A)

10

2

R

= VDS/ I

DSon

D

03ag27

tp = 10 µs

120

I

der

(%)

80

40

0

0 50 100 150 200

03aa25

(oC)

T

sp

VGS≥ 10 V

I

D

I

------------------ -

der

I

D25C°()

100%×=

Fig 2. Normalized continuous drain current as a

function of solder point temperature.

03ag34

I

AS

(A)

10

1

-1

10

-2

10

1 10 10

DC

100 µs

1 ms

10 ms
100 ms

2

1

Tj prior to avalanche = 125 ºC

-1

10

3

10

(V)

V

DS

10

-2

10

-1

25 ºC

1 10

(ms)

t

p

Tsp=25°C; IDM is single pulse. Unclamped inductive load; VDD≤ 15 V; RGS=50Ω;

VGS= 10 V; starting Tj=25°C and 125 °C.

Fig 3. Safe operatingarea; continuous and peak drain

currents as a function of drain-source voltage.

9397 750 08918

Fig 4. Non-repetitive avalanche ruggedness current

as a function of pulse duration.

© Koninklijke Philips Electronics N.V. 2001. All rights reserved.

Product data Rev. 01 — 16 October 2001 3 of 12

Philips Semiconductors

PHT2NQ10T

N-channel TrenchMOS transistor

7. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter Conditions Value Unit

R

th(j-sp)

R

th(j-a)

thermal resistance from junction to solder point mounted on a metal clad substrate; Figure 5 20 K/W
thermal resistance from junction to ambient mounted on a printed-circuit board;

150 K/W

minimum footprint

7.1 Transient thermal impedance

03ag26

t

p

δ =

T

t

T

t

(s)

p

Z

th(j-sp)

(K/W)

10

10

1

10

2

δ = 0.5

0.2

0.1

0.05

0.02

-1

-5

10

single pulse

10

-4

10

-3

10

-2

10

-1

P

t

p

1 10

Tsp=25°C

Fig 5. Transient thermal impedance from junction to solder point as a function of pulse duration.

9397 750 08918

© Koninklijke Philips Electronics N.V. 2001. All rights reserved.

Product data Rev. 01 — 16 October 2001 4 of 12

Philips Semiconductors

PHT2NQ10T

N-channel TrenchMOS transistor

8. Characteristics

Table 5: Characteristics

Tj=25°C unless otherwise specified

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

V

GS(th)

I

DSS

I

GSS

R

DSon

Dynamic characteristics

g

fs

Q

g(tot)

Q

gs

Q

gd

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Source-drain diode

V

SD

t

rr

Q

r

drain-source breakdown voltage ID= 250 µA; VGS=0V

=25°C 100 120 − V

T

j

= −55 °C89−−V

T

j

gate-source threshold voltage ID= 1 mA; VDS=VGS; Figure 10

=25°C 234V

T

j

= 150 °C 1.2 −−V

T

j

= −55 °C −−6V

T

j

drain-source leakage current VDS= 100 V; VGS=0V

=25°C − 125µA

T

j

= 150 °C − 4 250 µA

T

j

gate-source leakage current VGS= ±10 V; VDS=0V − 10 100 nA
drain-source on-state resistance VGS= 10 V; ID= 1.75 A; Figure 8 and 9

=25°C − 315 430 mΩ

T

j

= 150 °C − 725 990 mΩ

T

j

forward transconductance VDS=5V; ID= 2.5 A − 3 − S
total gate charge ID= 2.5 A; VDD=80V; VGS=10V;Figure 14 − 5.1 − nC
gate-source charge − 1 − nC
gate-drain (Miller) charge − 2.1 − nC
input capacitance VGS=0V; VDS= 25 V; f = 1 MHz; Figure 12 − 160 − pF
output capacitance − 29 − pF
reverse transfer capacitance − 18 − pF
turn-on delay time VDD=50V; RD=27Ω; VGS=10V; RG=6Ω− 4.5 − ns
rise time − 7.7 − ns
turn-off delay time − 7.8 − ns
fall time − 2.5 − ns

source-drain (diode forward) voltage IS= 2.5 A; VGS=0V;Figure 13 − 0.9 1.5 V
reverse recovery time IS= 2.5 A; dIS/dt = −100 A/µs; VGS=0V − 45 − ns
recovered charge − 90 − nC

9397 750 08918

Product data Rev. 01 — 16 October 2001 5 of 12

© Koninklijke Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

PHT2NQ10T

N-channel TrenchMOS transistor

10

I

D

T

= 25ºC

j

(A)

8

6

4

2

0

012345

03ag28

VGS = 10V

7 V

6.5 V

6 V

5.5 V

5 V

4.5 V

V

DS

(V)

Tj=25°CT

Fig 6. Output characteristics: drain current as a

Fig 7. Transfer characteristics: drain current as a

function of drain-source voltage; typical values.

03ag29

10 V

R

DSon

(Ω)

0.6

0.5

0.4

0.3

Tj = 25ºC

VGS = 6V

6.5 V 7 V

6

VDS > ID X R

I

D

(A)

4

2

0

02468

=25°C and 150 °C; VDS> ID× R

j

DSon

150ºC

function of gate-source voltage; typical values.

3

a

2.5

2

1.5

1

Tj = 25ºC

V

DSon

GS

03ag30

(V)

03aa29

0.2

0.1
0246810

(A)

I

D

Tj=25°C

Fig 8. Drain-source on-state resistance as a function

of drain current; typical values.

9397 750 08918

Fig 9. Normalized drain-source on-state resistance

0.5

0

-60 0 60 120 180

R

=

----------------------------

R

DSon 25 C°()

DSon

a

(oC)

T

j

factor as a function of junction temperature.

© Koninklijke Philips Electronics N.V. 2001. All rights reserved.

Product data Rev. 01 — 16 October 2001 6 of 12

Philips Semiconductors

PHT2NQ10T

N-channel TrenchMOS transistor

T

(oC)

j

03aa32

5

V

GS(th)

(V)

4

3

2

1

0

-60 0 60 120 180

ID= 1 mA; VDS=V

GS

max

typ

min

Fig 10. Gate-source threshold voltage as a function of

junction temperature.

3

10

C

(pF)

-1

10

I

D

(A)

-2

10

-3

10

-4

10

-5

10

-6

10

01 2

3

03aa35

maxtypmin

5

4

(V)

V

GS

Tj=25°C; VDS=10V

Fig 11. Sub-threshold drain current as a function of

gate-source voltage.

03ag32

C

iss

2

10

C

oss

C

10

10

-1

1 10 10

rss

2

V

(V)

DS

VGS= 0 V; f = 1 MHz

Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.

9397 750 08918

© Koninklijke Philips Electronics N.V. 2001. All rights reserved.

Product data Rev. 01 — 16 October 2001 7 of 12

Philips Semiconductors

PHT2NQ10T

N-channel TrenchMOS transistor

Tj = 25ºC

(V)

V

SD

03ag31

15

V

ID = 2.5 A

GS

(V)

Tj = 25ºC

12

9

V

6

3

0

02468

6

VGS = 0 V

I

S

(A)

4

2

150ºC

0

0 0.4 0.8 1.2

Tj=25°C and 150 °C; VGS=0V ID= 2.5 A; VDD= 80 V, 20V

Fig 13. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical

Fig 14. Gate-source voltage as a function of gate

charge; typical values.

values.

= 20 V VDD = 80 V

DD

03ag33

(nC)

Q

G

9397 750 08918

© Koninklijke Philips Electronics N.V. 2001. All rights reserved.

Product data Rev. 01 — 16 October 2001 8 of 12

Philips Semiconductors

PHT2NQ10T

N-channel TrenchMOS transistor

9. Package outline

Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223

D

y

b

1

132

e

1

e

E

c

H

E

AB

X

v M

A

4

Q

A

A

1

L

p

b

p

w M

B

detail X

0 2 4 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT A1b

A

0.10

1.8

mm

OUTLINE

VERSION

SOT223 SC-73

1.5

0.01

p

0.80

0.60

IEC JEDEC EIAJ

b

3.1

2.9

1

cD

0.32

6.7

0.22

6.3

e

E

3.7

4.6

3.3

REFERENCES

e1HELpQywv

7.3

1.1

2.3

6.7

0.7

0.95

0.85

0.1 0.10.2

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28
99-09-13

Fig 15. SOT223.

9397 750 08918

Product data Rev. 01 — 16 October 2001 9 of 12

© Koninklijke Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

10. Revision history

Table 6: Revision history

Rev Date CPCN Description

01 20001016 - Product specification; initial version

PHT2NQ10T

N-channel TrenchMOS transistor

9397 750 08918

Product data Rev. 01 — 16 October 2001 10 of 12

© Koninklijke Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

Philips Semiconductors

11. Data sheet status

PHT2NQ10T

PHT2NQ10T

N-channel TrenchMOS transistor

N-channel TrenchMOS transistor

Data sheet status

Objective data Development This data sheet contains data from the objectivespecification for product development.Philips Semiconductors

Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a

Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to

[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[1]

Product status

12. Definitions

Short-form specification — The data in a short-form specification is

extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.

Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.

Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.

[2]

Definition

reserves the right to change the specification in any manner without notice.

later date. Philips Semiconductors reserves the right to change the specification without notice, in order to
improve the design and supply the best possible product.

make changes at any time in order to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change Notification (CPCN) procedure
SNW-SQ-650A.

13. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warrantiesthattheseproducts are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.

Contact information

For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: [e-mail]. Fax: [phone]

© Koninklijke Philips Electronics N.V. 2001. All rights reserved.

9397 750 08918

9397 750 08918

Product data Rev. 01 — 16 October 2001 11 of 12

Product data Rev. 01 — 16 October 2001 11 of 12

© Koninklijke Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

Contents

1 Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

4 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

5 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2

6 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

7 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

7.1 Transient thermal impedance . . . . . . . . . . . . . . 4

8 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11

12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

PHT2NQ10T

N-channel TrenchMOS transistor

© Koninklijke Philips Electronics N.V. 2001.
Printed in The Netherlands

All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.

The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.

Date of release: 16 October 2001 Document order number: 9397 750 08918