Philips PHP8N20E Datasheet
Philips Semiconductors Product specification
PowerMOS transistor PHP8N20E
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
field-effect power transistor in a
plastic envelope featuring high V
avalanche energy capability, stable I
blocking voltage, fast switching and P
high thermal cycling performance R
withlowthermalresistance.Intended
DS
D
tot
DS(ON)
for use in Switched Mode Power
Supplies (SMPS), motor control
circuits and general purpose
switching applications.
PINNING - TO220AB PIN CONFIGURATION SYMBOL
Drain-source voltage 200 V
Drain current (DC) 9.2 A
Total power dissipation 90 W
Drain-source on-state resistance 0.4 Ω
PIN DESCRIPTION
tab
d
1 gate
2 drain
3 source
tab drain
123
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
D
I
DM
P
D
∆PD/∆TmbLinear derating factor Tmb > 25 ˚C - 0.6 W/K
V
GS
E
AS
I
AS
Tj, T
Continuous drain current Tmb = 25 ˚C; VGS = 10 V - 9.2 A
Tmb = 100 ˚C; VGS = 10 V - 6.5 A
Pulsed drain current Tmb = 25 ˚C - 37 A
Total dissipation Tmb = 25 ˚C - 90 W
Gate-source voltage - ± 30 V
Single pulse avalanche VDD ≤ 50 V; starting Tj = 25˚C; RGS = 50 Ω; - 250 mJ
energy VGS = 10 V
Peak avalanche current VDD ≤ 50 V; starting Tj = 25˚C; RGS = 50 Ω; - 9.2 A
VGS = 10 V
Operating junction and - 55 175 ˚C
stg
storage temperature range
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
February 1997 1 Rev 1.000
Thermal resistance junction to - - 1.67 K/W
mounting base
Thermal resistance junction to - 60 - K/W
ambient
Philips Semiconductors Product specification
PowerMOS transistor PHP8N20E
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
∆V
∆T
R
DS(ON)
V
GS(TO)
g
fs
I
DSS
I
GSS
Q
g(tot)
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
d
L
d
L
s
C
iss
C
oss
C
rss
(BR)DSS
j
Drain-source breakdown VGS = 0 V; ID = 0.25 mA 200 - - V
voltage
/ Drain-source breakdown VDS = VGS; ID = 0.25 mA - 0.25 - V/K
voltage temperature coefficient
Drain-source on resistance VGS = 10 V; ID = 6.4 A - 0.35 0.4 Ω
Gate threshold voltage VDS = VGS; ID = 0.25 mA 2.0 3.0 4.0 V
Forward transconductance VDS = 50 V; ID = 5.4 A 3.8 4.7 - S
Drain-source leakage current VDS = 200 V; VGS = 0 V - 1 25 µA
VDS = 160 V; VGS = 0 V; Tj = 125 ˚C - 30 250 µA
Gate-source leakage current VGS = ±30 V; VDS = 0 V - 10 100 nA
Total gate charge ID = 5.9 A; V
Gate-source charge - 4.5 6 nC
= 160 V; VGS = 10 V - 30 40 nC
DD
Gate-drain (Miller) charge - 15 20 nC
Turn-on delay time VDD = 100 V; ID = 5.9 A; - 12 - ns
Turn-on rise time RG = 12 Ω; RD = 16 Ω -45-ns
Turn-off delay time - 80 - ns
Turn-off fall time - 40 - ns
Internal drain inductance Measured from contact screw on - 3.5 - nH
tab to centre of die
Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH
from package to centre of die
Internal source inductance Measured from source lead 6 mm - 7.5 - nH
from package to source bond pad
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 700 - pF
Output capacitance - 100 - pF
Feedback capacitance - 50 - pF
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous source current Tmb = 25˚C - - 9.2 A
(body diode)
Pulsed source current (body Tmb = 25˚C - - 37 A
diode)
Diode forward voltage IS = 9 A; VGS = 0 V - - 1.5 V
Reverse recovery time IS = 5.9 A; VGS = 0 V; - 180 - ns
dI/dt = 100 A/µs
Reverse recovery charge - 1.2 - µC
February 1997 2 Rev 1.000
Philips Semiconductors Product specification
PowerMOS transistor PHP8N20E
PD%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Normalised Power Derating
Tmb / C
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/P
ID%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Tmb / C
= f(Tmb)
D 25 ˚C
Normalised Current Derating
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/I
= f(Tmb); conditions: VGS ≥ 10 V
D 25 ˚C
Zth / (K/W)
10
D =
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0
1E-07 1E-05 1E-03 1E-01 1E+01
t / s
P
D
t
p
T
BUKx54-lv
t
p
D =
T
t
Fig.4. Transient thermal impedance.
Z
= f(t); parameter D = tp/T
th j-mb
ID / A
20
15
10
VGS / V =
5
0
0 2 4 6 8 10 12 14 16 18 20
20
VDS / V
BUK444-200A
Fig.5. Typical output characteristics
ID = f(VDS); parameter V
GS
810
7
6
5
4
.
ID / A
100
A
B
10
1
0.1
1 10 100 1000
RDS(ON) = VDS/ID
DC
VDS / V
BUK454-200A,B
tp = 10 us
100 us
1 ms
10 ms
100 ms
Fig.3. Safe operating area. Tmb = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter t
RDS(ON) / Ohm
1.5
5.5
5
4.5
1.0
0.5
0
0 2 4 6 8 10 12 14 16 18 20
6 6.5
ID / A
Fig.6. Typical on-state resistance
R
p
= f(ID); parameter V
DS(ON)
BUK454-200A
VGS / V =
7
GS
7.5
8
10
20
.
February 1997 3 Rev 1.000
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