Philips PHB73N06T, PHP73N06T Datasheet

1. Description

2. Features

PHP73N06T; PHB73N06T

N-channel enhancement mode ﬁeld-effect transistor

Rev. 01 — 12 March 2001 Product speciﬁcation

N-channel enhancement mode ﬁeld-effect powertransistorina plastic package using TrenchMOS™1 technology.

Product availability:

PHP73N06T in SOT78 (TO-220AB) PHB73N06T in SOT404 (D2-PAK).

■ Fast switching

■ Very low on-state resistance.

3. Applications

■ General purpose switching

■ Switched mode power supplies.

c

4. Pinning information

Table 1: Pinning - SOT78 and SOT404, simpliﬁed outline and symbol

Pin Description Simpliﬁed outline Symbol

1 gate (g) 2 drain (d) 3 source (s) mb mounting base;

[1] It is not possible to make connection to pin 2 of the SOT404 package.

c

connected to drain (d)

[1]

12mb3

SOT78 (TO-220AB)

MBK106

mb

2

13

SOT404 (D

2-

PAK)

MBK116

g

MBB076

d

s

1. TrenchMOS is a trademark of Royal Philips Electronics.

Philips Semiconductors

PHP73N06T; PHB73N06T

N-channel enhancement mode ﬁeld-effect transistor

5. Quick reference data

Table 2: Quick reference data

Symbol Parameter Conditions Typ Max Unit

V I P T R

DS

D

tot j DSon

drain-source voltage (DC) Tj=25to175°C − 55 V drain current (DC) Tmb=25°C; VGS=10V − 73 A total power dissipation Tmb=25°C − 149 W junction temperature − 175 °C drain-source on-state resistance Tj=25°C; VGS= 10 V; ID= 25 A 12 14 mΩ

6. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

DGR

V

GS

I

D

I

DM

P

tot

T

stg

T

j

Source-drain diode

I

S

I

SM

Avalanche ruggedness

E

AS

drain-source voltage (DC) Tj=25to175°C − 55 V drain-gate voltage (DC) Tj=25to175°C; RGS=20kΩ−55 V gate-source voltage (DC) −±20 V drain current (DC) Tmb=25°C; VGS=10V;

− 73 A

Figure 2 and 3

T

= 100 °C; VGS=10V;

mb

− 52 A

Figure 2 and 3

peak drain current Tmb=25°C; pulsed; tp≤ 10 µs;

− 266 A

Figure 3

total power dissipation Tmb=25°C; Figure 1 − 166 W storage temperature −55 175 °C operating junction temperature −55 175 °C

source (diode forward) current (DC) Tmb=25°C − 73 A peak source (diode forward) current Tmb=25°C; pulsed; tp≤ 10 µs − 266 A

non-repetitive avalanche energy unclamped inductive load; IAS=50A;

= 0.1 ms; VDD≤ 25 V; RGS=50Ω;

t

p

= 5 V; starting Tj=25°C;

V

GS

− 125 mJ

Figure 4

9397 75008107

Product speciﬁcation Rev. 01 — 12 March 2001 2 of 14

Philips Semiconductors

PHP73N06T; PHB73N06T

N-channel enhancement mode ﬁeld-effect transistor

120

P

der

(%)

100

80

60

40

20

0

0 25 50 75 100 125 150 175 200

P

der

tot

----------------------

P

tot 25 C°()

100%×=

03aa16

Tmb (oC)

Fig 1. Normalized total power dissipation as a

function of mounting base temperature.

3

10

R

= VDS / I

DSon

I

D

(A)

2

10

D

003aaa083

tp = 1 µs

10 µs

100 µs

tp =

120

I

der (%)

100

80

60

40

20

0

0 25 50 75 100 125 150 175 200

03aa24

Tmb (oC)

VGS≥ 5V

I

der

D

------------------ -

I

D25C°()

100%×=

Fig 2. Normalized continuous drain current as a

function of mounting base temperature.

2

10

I

AS (A)

10

003aaa085

25 oC

VDS (V)

1 ms

10 1

10 ms

100 ms

2

10

P

1

t

p

D.C.

δ =

T

t

p

T

10

Tj prior to avalanche = 150 oC

1

-3

10

-2

10

-1

10

tp ms

101

Tmb=25°C; IDM is single pulse Unclamped inductive load; VDD≤ 25 V; RGS=50Ω;

VGS= 5 V; starting Tj=25°C and 150 °C

Fig 3. Safe operating area; continuous and peak drain

currents as a function of drain-source voltage.

9397 750 08107

Fig 4. Non-repetitive avalanche ruggedness current

as a function of pulse duration.

Product speciﬁcation Rev. 01 — 12 March 2001 3 of 14

Philips Semiconductors

PHP73N06T; PHB73N06T

N-channel enhancement mode ﬁeld-effect transistor

7. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter Conditions Value Unit

R

th(j-mb)

R

th(j-a)

thermal resistance from junction to mounting base

thermal resistance from junction to ambient SOT78 package; vertical in still air 60 K/W

7.1 Transient thermal impedance

Figure 5 0.9 K/W

SOT404 package; mounted on

50 K/W printed circuit board; minimum footprint.

Z

th (j-mb)

(K/W)

10

δ = 0.5

1

δ =

0.5

0.2

-1

10

0.1

0.05

0.02

-2

-3

-7

10

Single pulse

-6

10

-4

-5

-3

10

P

-1

-2

10

003aaa084

t

p

δ =

T

t

p

t

T

101

tp (s)

Fig 5. Transient thermal impedance from junction to mounting base as a function of

pulse duration.

9397 750 08107

Product speciﬁcation Rev. 01 — 12 March 2001 4 of 14

Philips Semiconductors

PHP73N06T; PHB73N06T

N-channel enhancement mode ﬁeld-effect transistor

8. Characteristics

Table 5: Characteristics

Tj=25°C unless otherwise speciﬁed

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

V

GS(th)

I

DSS

I

GSS

R

DSon

Dynamic characteristics

Q

g(tot)

Q

gs

Q

gd

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Source-drain diode

V

SD

t

rr

Q

r

drain-source breakdown voltage ID= 250 µA; VGS=0V 55 −−V gate-source threshold voltage ID= 1 mA; VDS=VGS;

Figure 10

=25°C 234V

T

j

= 175 °C1−−V

T

j

drain-source leakage current VDS=55V; VGS=0V

=25°C − 0.05 10 µA

T

j

= 175 °C −−500 µA

T

j

gate-source leakage current VGS= ±20 V; VDS=0V − 2 100 nA drain-source on-state resistance VGS= 10 V; ID=25A;

Figure 8 and 9

=25oC − 12 14 mΩ

T

j

= 175 °C −−28 mΩ

T

j

total gate charge ID= 50 A; VDD=44V;

=10V;Figure 15

V

gate-source charge − 10 − nC

GS

− 54 − nC

gate-drain (Miller) charge − 19 − nC input capacitance VGS=0V; VDS=25V; output capacitance − 421 506 pF

f = 1 MHz; Figure 13

− 1848 2464 pF

reverse transfer capacitance − 231 317 pF turn-on delay time VDD=30V; RD= 1.2 Ω;

=5V; RG=10Ω

V

rise time − 79 119 ns

GS

− 17 26 ns

turn-off delay time − 57 80 ns fall time − 51 71 ns

source-drain (diode forward) voltage IS= 25 A; VGS=0V;

− 0.85 1.2 V

Figure 14

reverse recovery time IS=73A;

/dt = −100 A/µs;

dI

recovered charge − 0.12 −µC

S

= −10 V; VR=30V

V

GS

− 54 − ns

9397 750 08107

Product speciﬁcation Rev. 01 — 12 March 2001 5 of 14