Philips PHP54N06T Datasheet
M3D307
1. Description
2. Features
PHP54N06T
N-channel enhancement mode field-effect transistor
Rev. 01 — 14 February 2001 Product specification
N-channel enhancement mode field-effect powertransistorina plastic package using
TrenchMOS™1 technology.
Product availability:
PHP54N06T in SOT78 (TO-220AB).
■ Low on-state resistance
■ 175 °C rated.
3. Applications
■ DC to DC converters
■ Switched mode power supplies.
c
4. Pinning information
Table 1: Pinning - SOT78, simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
2 drain (d)
3 source (s)
mb mounting base;
connected to drain (d)
c
MBK106
12mb3
SOT78 (TO-220AB)
g
MBB076
d
s
1. TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors
PHP54N06T
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
V
I
P
T
R
DS
D
tot
j
DSon
drain-source voltage (DC) − 55 V
drain current (DC) Tmb=25°C; VGS=10V − 54 A
total power dissipation Tmb=25°C − 118 W
junction temperature − 175 °C
drain-source on-state resistance VGS= 10 V; ID=25A
=25°C1720mΩ
T
j
= 175 °C − 40 mΩ
T
j
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
I
SM
Avalanche ruggedness
W
DSS
drain-source voltage (DC) − 55 V
drain-gate voltage (DC) RGS=20kΩ−55 V
gate-source voltage (DC) −±20 V
drain current (DC) Tmb=25°C; VGS=10V;
− 54 A
Figure 2 and 3
T
= 100 °C; VGS=10V;Figure 2 − 38 A
mb
peak drain current Tmb=25°C; pulsed; tp≤ 10 µs;
− 217 A
Figure 3
total power dissipation Tmb=25°C; Figure 1 − 118 W
storage temperature −55 +175 °C
operating junction temperature −55 +175 °C
source (diode forward) current (DC) Tmb=25°C − 54 A
peak source (diode forward) current Tmb=25°C; pulsed; tp≤ 10 µs − 217 A
non-repetitive avalanche energy unclamped inductive load; ID=48A;
≤ 55 V; VGS= 10 V; RGS=50Ω;
V
DS
starting T
mb
=25°C
− 115 mJ
9397 750 08022
Product specification Rev. 01 — 14 February 2001 2 of 13
© Philips Electronics N.V. 2001. All rights reserved.
Philips Semiconductors
PHP54N06T
N-channel enhancement mode field-effect transistor
120
P
der
(%)
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
P
P
der
tot
----------------------
P
tot 25 C°()
100%×=
03na19
Tmb (oC)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
3
10
I
D
(A)
R
= VDS/ I
10
2
DSon
120
I
der
(%)
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
03aa24
Tmb (oC)
VGS≥ 4.5 V
I
I
der
D
------------------ -
I
D25C°()
100%×=
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
03nc66
D
tp = 10 us
100 us
t
P
10
t
p
1
1 10
p
δ
=
T
t
T
D.C.
VDS (V)
1 ms
10 ms
100 ms
10
2
Tmb=25°C; IDM single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 08022
© Philips Electronics N.V. 2001. All rights reserved.
Product specification Rev. 01 — 14 February 2001 3 of 13
Philips Semiconductors
PHP54N06T
N-channel enhancement mode field-effect transistor
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter Conditions Value Unit
R
th(j-a)
R
th(j-mb)
thermal resistance from junction to ambient vertical in still air 60 K/W
thermal resistance from junction to mounting
Figure 4 1.2 K/W
base
7.1 Transient thermal impedance
10
Z
th(j-mb)
(K/W)
1
10
10
10
δ = 0.5
0.2
0.1
-1
0.05
0.02
-2
Single Shot
-3
-6
10
-5
10
-4
10
-3
10
10
P
-2
10
03nc67
t
p
δ =
T
t
p
-1
t
T
1
tp (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 08022
© Philips Electronics N.V. 2001. All rights reserved.
Product specification Rev. 01 — 14 February 2001 4 of 13
Loading...