Philips PHD4ND40E, PHP4ND40E Datasheet
Philips Semiconductors Product specification
PowerMOS transistors PHP4ND40E, PHB4ND40E
FREDFET, Avalanche energy rated
FEATURES SYMBOL QUICK REFERENCE DATA
• Repetitive Avalanche Rated V
DSS
= 400 V
• Fast switching
• Stable off-state characteristics I
D
= 4.4 A
• High thermal cycling performance
• Low thermal resistance R
DS(ON)
≤ 1.8 Ω
• Fast reverse recovery diode
trr = 180 ns
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED).
This gives improved switching performance in half bridge ansd full bridge converters making this device particularly
suitable for inverters, lighting ballasts and motor control circuits.
The PHP4ND40E is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB4ND40E is supplied in the SOT404 surface mounting package.
PINNING SOT78 (TO220AB) SOT404
PIN DESCRIPTION
1 gate
2 drain
1
3 source
tab drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DSS
Drain-source voltage Tj = 25 ˚C to 150˚C - 400 V
V
DGR
Drain-gate voltage Tj = 25 ˚C to 150˚C; RGS = 20 kΩ - 400 V
V
GS
Gate-source voltage - ± 30 V
I
D
Continuous drain current Tmb = 25 ˚C; VGS = 10 V - 4.4 A
Tmb = 100 ˚C; VGS = 10 V - 2.7 A
I
DM
Pulsed drain current Tmb = 25 ˚C - 18 A
P
D
Total dissipation Tmb = 25 ˚C - 83 W
Tj, T
stg
Operating junction and - 55 150 ˚C
storage temperature range
d
g
s
123
tab
13
tab
2
August 1998 1 Rev 1.100
Philips Semiconductors Product specification
PowerMOS transistors PHP4ND40E, PHB4ND40E
FREDFET, Avalanche energy rated
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
E
AS
Non-repetitive avalanche Unclamped inductive load, IAS = 1.5 A; - 190 mJ
energy tp = 0.3 ms; Tj prior to avalanche = 25˚C;
VDD ≤ 50 V; RGS = 50 Ω; VGS = 10 V; refer
to fig:17
E
AR
Repetitive avalanche energy1IAR = 4.4 A; tp = 1 µs; Tj prior to - 5.5 mJ
avalanche = 25˚C; RGS = 50 Ω; VGS = 10 V;
refer to fig:18
IAS, I
AR
Repetitive and non-repetitive - 4.4 A
avalanche current
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction - - 1.5 K/W
to mounting base
R
th j-a
Thermal resistance junction SOT78 package, in free air - 60 - K/W
to ambient SOT404 package, pcb mounted, minimum - 50 - K/W
footprint
1 pulse width and repetition rate limited by Tj max.
August 1998 2 Rev 1.100
Philips Semiconductors Product specification
PowerMOS transistors PHP4ND40E, PHB4ND40E
FREDFET, Avalanche energy rated
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown VGS = 0 V; ID = 0.25 mA 400 - - V
voltage
∆V
(BR)DSS
/ Drain-source breakdown VDS = VGS; ID = 0.25 mA - 0.1 - %/K
∆T
j
voltage temperature
coefficient
R
DS(ON)
Drain-source on resistance VGS = 10 V; ID = 2.2 A - 1.3 1.8 Ω
V
GS(TO)
Gate threshold voltage VDS = VGS; ID = 0.25 mA 2.0 3.0 4.0 V
g
fs
Forward transconductance VDS = 30 V; ID = 2.2 A 1.3 2.2 - S
I
DSS
Drain-source leakage current VDS = 400 V; VGS = 0 V - 1 25 µA
VDS = 320 V; VGS = 0 V; Tj = 125 ˚C - 30 250 µA
I
GSS
Gate-source leakage current VGS = ±30 V; VDS = 0 V - 10 200 nA
Q
g(tot)
Total gate charge ID = 4.4 A; V
DD
= 320 V; VGS = 10 V - 26 30 nC
Q
gs
Gate-source charge - 2 4 nC
Q
gd
Gate-drain (Miller) charge - 14 17 nC
t
d(on)
Turn-on delay time VDD = 200 V; RD = 47 Ω; - 10 - ns
t
r
Turn-on rise time RG = 18 Ω -30-ns
t
d(off)
Turn-off delay time - 55 - ns
t
f
Turn-off fall time - 38 - ns
L
d
Internal drain inductance Measured from tab to centre of die - 3.5 - nH
L
d
Internal drain inductance Measured from drain lead to centre of die - 4.5 - nH
(SOT78 package only)
L
s
Internal source inductance Measured from source lead to source - 7.5 - nH
bond pad
C
iss
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 310 - pF
C
oss
Output capacitance - 60 - pF
C
rss
Feedback capacitance - 36 - pF
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
S
Continuous source current Tmb = 25˚C - - 4.4 A
(body diode)
I
SM
Pulsed source current (body Tmb = 25˚C - - 18 A
diode)
V
SD
Diode forward voltage IS = 4.4 A; VGS = 0 V - - 1.5 V
t
rr
Reverse recovery time IS = 4.4 A; VGS = 0 V; dI/dt = 100 A/µs - 180 - ns
IS = 4.4 A; VGS = 0 V; dI/dt = 100 A/µs; - 220 - ns
125˚C
Q
rr
Reverse recovery charge IS = 4.4 A; VGS = 0 V; dI/dt = 100 A/µs - 0.65 - µC
IS = 4.4 A; VGS = 0 V; dI/dt = 100 A/µs; - 2.6 - µC
125˚C
I
rrm
Peak reverse recovery IS = 4.4 A; VGS = 0 V; dI/dt = 100 A/µs; - 15 - A
current 125˚C
August 1998 3 Rev 1.100
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