Philips PHB3N50E, PHP3N50E Datasheet

Philips Semiconductors Product specification

PowerMOS transistors PHP3N50E, PHB3N50E
Avalanche energy rated

FEATURES SYMBOL QUICK REFERENCE DATA

• Repetitive Avalanche Rated

• Fast switching V

d

= 500 V

DSS

• Stable off-state characteristics

• High thermal cycling performance I

• Low thermal resistance

g

s

= 3.4 A

D

R

DS(ON)

≤ 3 Ω

GENERAL DESCRIPTION

N-channel,enhancementmodefield-effect power transistor, intendedforusein off-line switched mode powersupplies,
T.V.andcomputer monitor powersupplies, d.c. to d.c.converters, motor controlcircuitsand general purpose switching
applications.

The PHP3N50E is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB3N50E is supplied in the SOT404 surface mounting package.

PINNING SOT78 (TO220AB) SOT404

PIN DESCRIPTION

1 gate
2 drain

1

3 source

tab drain

tab

123

tab

2

13

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DSS

V

DGR

V

GS

I

D

I

DM

P

D

Tj, T

December 1998 1 Rev 1.200

Drain-source voltage Tj = 25 ˚C to 150˚C - 500 V
Drain-gate voltage Tj = 25 ˚C to 150˚C; RGS = 20 kΩ - 500 V
Gate-source voltage - ± 30 V
Continuous drain current Tmb = 25 ˚C; VGS = 10 V - 3.4 A

Tmb = 100 ˚C; VGS = 10 V - 2.2 A
Pulsed drain current Tmb = 25 ˚C - 14 A
Total dissipation Tmb = 25 ˚C - 83 W
Operating junction and - 55 150 ˚C

stg

storage temperature range

Philips Semiconductors Product specification

PowerMOS transistors PHP3N50E, PHB3N50E
Avalanche energy rated

AVALANCHE ENERGY LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

E

AS

E

AR

IAS, I

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R

th j-mb

R

th j-a

Non-repetitive avalanche Unclamped inductive load, IAS = 2.1 A; - 212 mJ
energy tp = 0.31 ms; Tj prior to avalanche = 25˚C;

VDD ≤ 50 V; RGS = 50 Ω; VGS = 10 V; refer

to fig:17
Repetitive avalanche energy1IAR = 3.4 A; tp = 2.5 µs; Tj prior to - 5.5 mJ

avalanche = 25˚C; RGS = 50 Ω; VGS = 10 V;

refer to fig:18
Repetitive and non-repetitive - 3.4 A

AR

avalanche current

Thermal resistance junction - - 1.5 K/W
to mounting base
Thermal resistance junction SOT78 package, in free air - 60 - K/W
to ambient SOT404 package, pcb mounted, minimum - 50 - K/W

footprint

1 pulse width and repetition rate limited by Tj max.

December 1998 2 Rev 1.200

Philips Semiconductors Product specification

PowerMOS transistors PHP3N50E, PHB3N50E
Avalanche energy rated

ELECTRICAL CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

∆V
∆T

R

DS(ON)

V

GS(TO)

g

fs

I

DSS

I

GSS

Q

g(tot)

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

d

L

d

L

s

C

iss

C

oss

C

rss

(BR)DSS

j

Drain-source breakdown VGS = 0 V; ID = 0.25 mA 500 - - V
voltage

/ Drain-source breakdown VDS = VGS; ID = 0.25 mA - 0.1 - %/K

voltage temperature
coefficient
Drain-source on resistance VGS = 10 V; ID = 1.7 A - 2.5 3 Ω
Gate threshold voltage VDS = VGS; ID = 0.25 mA 2.0 3.0 4.0 V
Forward transconductance VDS = 30 V; ID = 1.7 A 1 2 - S
Drain-source leakage current VDS = 500 V; VGS = 0 V - 1 25 µA

VDS = 400 V; VGS = 0 V; Tj = 125 ˚C - 30 250 µA
Gate-source leakage current VGS = ±30 V; VDS = 0 V - 10 200 nA

Total gate charge ID = 3.4 A; V

= 400 V; VGS = 10 V - 26 30 nC

DD

Gate-source charge - 2 3 nC
Gate-drain (Miller) charge - 13 17 nC

Turn-on delay time VDD = 250 V; RD = 68 Ω; - 10 - ns
Turn-on rise time RG = 18 Ω -29-ns
Turn-off delay time - 66 - ns
Turn-off fall time - 32 - ns

Internal drain inductance Measured from tab to centre of die - 3.5 - nH
Internal drain inductance Measured from drain lead to centre of die - 4.5 - nH

(SOT78 package only)
Internal source inductance Measured from source lead to source - 7.5 - nH

bond pad
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 310 - pF

Output capacitance - 50 - pF
Feedback capacitance - 28 - pF

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous source current Tmb = 25˚C - - 3.4 A
(body diode)
Pulsed source current (body Tmb = 25˚C - - 14 A
diode)
Diode forward voltage IS = 3.4 A; VGS = 0 V - - 1.2 V

Reverse recovery time IS = 3.4 A; VGS = 0 V; dI/dt = 100 A/µs - 370 - ns
Reverse recovery charge - 2.7 - µC

December 1998 3 Rev 1.200

Philips Semiconductors Product specification

PowerMOS transistors PHP3N50E, PHB3N50E
Avalanche energy rated

PD%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140

Normalised Power Derating

Tmb / C

Fig.1. Normalised power dissipation.

PD% = 100⋅PD/P

ID%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140

Tmb / C

= f(Tmb)

D 25 ˚C

Normalised Current Derating

Fig.2. Normalised continuous drain current.

ID% = 100⋅ID/I

= f(Tmb); conditions: VGS ≥ 10 V

D 25 ˚C

Zth j-mb, Transient thermal impedance (K/W)

10

D = 0.5

1

0.2

0.1

0.01

0.001

single pulse

1us

0.1

0.05

0.02

10us 100us

tp, pulse width (s)

1ms 1s

P

D

10ms 100ms

PHP2N60

t

D =

p

T

t

t

p

T

Fig.4. Transient thermal impedance.

Z

= f(t); parameter D = tp/T

th j-mb

ID, Drain current (Amps)

8

Tj = 25 C

7
6
5
4
3
2
1
0

0 5 10 15 20 25 30

VDS, Drain-Source voltage (Volts)

Fig.5. Typical output characteristics

ID = f(VDS); parameter V

PHP3N50

7 V

VGS = 4.5 V

GS

10 V

5.5 V

.

6 V

5 V

ID, Drain current (Amps)

100

10

RDS(ON) = VDS/ID

1

DC

0.1
10 100 1000 10000

VDS, Drain-source voltage (Volts)

tp = 10 us

100 us

1 ms

10 ms

100 ms

PHP3N50

Fig.3. Safe operating area. Tmb = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter t

RDS(on), Drain-Source on resistance (Ohms)

6

4.5 V

5

Tj = 25 C

4

3

2

1

0

012345678

5 V 5.5 V

ID, Drain current (Amps)

VGS = 6 V

Fig.6. Typical on-state resistance

R

p

= f(ID); parameter V

DS(ON)

PHP3N50

10 V

7 V

.

GS

December 1998 4 Rev 1.200

Philips Semiconductors Product specification

PowerMOS transistors PHP3N50E, PHB3N50E
Avalanche energy rated

ID, Drain current (Amps)

8

VDS > ID x RDS(on)max

7
6
5
4
3
2
1
0

0246810

Tj = 150 C

Tj = 25 C

VGS, Gate-Source voltage (Volts)

PHP3N50

Fig.7. Typical transfer characteristics.

ID = f(VGS); parameter T

gfs, Transconductance (S)

3

VDS > ID x RDS(on)max

2.5

Tj = 25 C

2

1.5

1

0.5

j

PHP3N50

150 C

VGS(TO) / V

4

3

2

1

0

-60 -40 -20 0 20 40 60 80 100 120 140

max.

typ.

min.

Tj / C

Fig.10. Gate threshold voltage

V

= f(Tj); conditions: ID = 0.25 mA; VDS = V

GS(TO)

1E-01

1E-02

1E-03

1E-04

1E-05

ID / A

SUB-THRESHOLD CONDUCTION

2 %

typ

.

GS

98 %

0

012345678

Fig.8. Typical transconductance

a

2

1

0

-60 -40 -20 0 20 40 60 80 100 120 140

ID, Drain current (A)

gfs = f(ID); parameter T

Normalised RDS(ON) = f(Tj)

Tj / C

.

j

Fig.9. Normalised drain-source on-state resistance.

a = R

DS(ON)/RDS(ON)25 ˚C

= f(Tj); ID = 1.7 A; VGS = 10 V

1E-06

0 1 2 3 4

VGS / V

Fig.11. Sub-threshold drain current.

ID = f(V

Junction capacitances (pF)

1000

100

10

1

1 10 100 1000

Fig.12. Typical capacitances, C

C = f(VDS); conditions: VGS = 0 V; f = 1 MHz

; conditions: Tj = 25 ˚C; VDS = V

GS)

Ciss

Coss

Crss

VDS, Drain-Source voltage (Volts)

, C

iss

PHP3N50

oss

, C

GS

rss

.

December 1998 5 Rev 1.200

Philips Semiconductors Product specification

PowerMOS transistors PHP3N50E, PHB3N50E
Avalanche energy rated

VGS, Gate-Source voltage (Volts)

15

ID = 3.4 A

Tj = 25 C

10

5

0

0 10203040

Qg, Gate charge (nC)

240 V

100 V

PHP3N50

VDD = 400 V

Fig.13. Typical turn-on gate-charge characteristics.

V

= f(QG); parameter V

GS

Switching times (ns)

1000

VDD = 250 V

VGS = 10 V
RD = 68 Ohms

Tj = 25 C

100

td(off)

tf

tr

10

td(on)

1

0 102030405060

RG, Gate resistance (Ohms)

Fig.14. Typical switching times; t

d(on)

DS

, tr, t

PHP3N50

, tf = f(RG)

d(off)

IF, Source-Drain diode current (Amps)

20

VGS = 0 V

15

10

5

0

0 0.5 1 1.5

VSDS, Source-Drain voltage (Volts)

150 C

PHP3N50

Tj = 25 C

Fig.16. Source-Drain diode characteristic.

IF = f(V

Non-repetitive Avalanche current, IAS (A)

10

1

VDS

tp

ID

0.1
1E-06 1E-05 1E-04 1E-03 1E-02

); parameter T

SDS

Tj prior to avalanche = 25 C

125 C

Avalanche time, tp (s)

j

PHP3N50E

Fig.17. Maximum permissible non-repetitive

avalanche current (IAS) versus avalanche time (tp);

unclamped inductive load

Normalised Drain-source breakdown voltage

1.15

V(BR)DSS @ Tj
V(BR)DSS @ 25 C

1.1

1.05

1

0.95

0.9

0.85

-100 -50 0 50 100 150
Tj, Junction temperature (C)

Fig.15. Normalised drain-source breakdown voltage

V

(BR)DSS/V(BR)DSS 25 ˚C

= f(Tj)

;

Maximum Repetitive Avalanche Current, IAR (A)

10

1

0.1

0.01
1E-06 1E-05 1E-04 1E-03 1E-02

Avalanche time, tp (s)

Tj prior to avalanche = 25 C

125 C

PHP3N50E

Fig.18. Maximum permissible repetitive avalanche

current (IAR) versus avalanche time (tp)

December 1998 6 Rev 1.200

Philips Semiconductors Product specification

PowerMOS transistors PHP3N50E, PHB3N50E
Avalanche energy rated

MECHANICAL DATA

Dimensions in mm
Net Mass: 2 g

10,3
max

1,3

3,7

4,5
max

3,0 max

not tinned

1,3

max

(2x)

123

2,54 2,54

2,8

3,0

13,5

min

0,9 max (3x)

5,9

min

15,8

max

0,6

2,4

Fig.19. SOT78 (TO220AB); pin 2 connected to mounting base.

Notes

1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.

2. Refer to mounting instructions for SOT78 (TO220) envelopes.

3. Epoxy meets UL94 V0 at 1/8".

December 1998 7 Rev 1.200

Philips Semiconductors Product specification

PowerMOS transistors PHP3N50E, PHB3N50E
Avalanche energy rated

MECHANICAL DATA

Dimensions in mm
Net Mass: 1.4 g

2.54 (x2)

MOUNTING INSTRUCTIONS

Dimensions in mm

10.3 max

11 max

15.4

0.85 max
(x2)

4.5 max

1.4 max

0.5

Fig.20. SOT404 : centre pin connected to mounting base.

11.5

2.5

9.0

17.5

2.0

3.8

5.08

Fig.21. SOT404 : soldering pattern for surface mounting

.

Notes

1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.

2. Epoxy meets UL94 V0 at 1/8".

December 1998 8 Rev 1.200

Philips Semiconductors Product specification

PowerMOS transistors PHP3N50E, PHB3N50E
Avalanche energy rated

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 1998

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

December 1998 9 Rev 1.200