Philips PHP33N10 Datasheet

Philips Semiconductors Product specification

PowerMOS transistor PHP33N10

GENERAL DESCRIPTION QUICK REFERENCE DATA

N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
field-effect power transistor in a
plastic envelope featuring stable V
blocking voltage, fast switching and I
high thermal cycling performance P
withlowthermalresistance.Intended R
for use in Switched Mode Power

DS

D

tot

DS(ON)

Supplies (SMPS), motor control
circuits and general purpose
switching applications.

PINNING - TO220AB PIN CONFIGURATION SYMBOL

Drain-source voltage 100 V
Drain current (DC) 34 A
Total power dissipation 175 W
Drain-source on-state resistance 0.057 Ω

PIN DESCRIPTION

tab

d

1 gate
2 drain
3 source

tab drain

123

g

s

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

D

I

DM

P

D

∆PD/∆TmbLinear derating factor Tmb > 25 ˚C - 1.167 W/K
V

GS

Tj, T

Continuous drain current Tmb = 25 ˚C; VGS = 10 V - 34 A

Tmb = 100 ˚C; VGS = 10 V - 24 A
Pulsed drain current Tmb = 25 ˚C - 136 A
Total dissipation Tmb = 25 ˚C - 150 W

Gate-source voltage - ± 30 V
Operating junction and - 55 175 ˚C

stg

storage temperature range

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R
R

th j-mb

th j-a

Thermal resistance junction to - - 1 K/W
mounting base
Thermal resistance junction to - 60 - K/W
ambient

April 1998 1 Rev 1.100

Philips Semiconductors Product specification

PowerMOS transistor PHP33N10

ELECTRICAL CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

∆V
∆T

R

DS(ON)

V

GS(TO)

g

fs

I

DSS

I

GSS

Q

g(tot)

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

d

L

d

L

s

C

iss

C

oss

C

rss

(BR)DSS
j

Drain-source breakdown VGS = 0 V; ID = 0.25 mA 100 - - V
voltage

/ Drain-source breakdown VDS = VGS; ID = 0.25 mA - 0.15 - V/K

voltage temperature coefficient
Drain-source on resistance VGS = 10 V; ID = 17 A - 0.052 0.057 Ω
Gate threshold voltage VDS = VGS; ID = 0.25 mA 2.0 3.0 4.0 V
Forward transconductance VDS = 50 V; ID = 17 A 12 16 - S
Drain-source leakage current VDS = 100 V; VGS = 0 V - 1 25 µA

VDS = 80 V; VGS = 0 V; Tj = 150 ˚C - 100 250 µA

Gate-source leakage current VGS = ±30 V; VDS = 0 V - 10 100 nA
Total gate charge ID = 17 A; V

Gate-source charge - 8 11 nC

= 80 V; VGS = 10 V - 42 50 nC

DD

Gate-drain (Miller) charge - 20 30 nC
Turn-on delay time VDD = 50 V; ID = 17 A; - 18 - ns

Turn-on rise time RG = 9.1 Ω; RD = 2.9 Ω -40-ns
Turn-off delay time - 125 - ns
Turn-off fall time - 50 - ns

Internal drain inductance Measured from contact screw on - 3.5 - nH

tab to centre of die

Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH

from package to centre of die

Internal source inductance Measured from source lead 6 mm - 7.5 - nH

from package to source bond pad

Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 1500 - pF
Output capacitance - 450 - pF
Feedback capacitance - 130 - pF

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous source current Tmb = 25˚C - - 34 A
(body diode)
Pulsed source current (body Tmb = 25˚C - - 136 A
diode)
Diode forward voltage IS = 34 A; VGS = 0 V - - 1.5 V

Reverse recovery time IS = 17 A; VGS = 0 V; - 200 - ns

dI/dt = 100 A/µs

Reverse recovery charge - 1.0 - µC

April 1998 2 Rev 1.100

Philips Semiconductors Product specification

PowerMOS transistor PHP33N10

PD%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140 160 180

Normalised Power Derating

Tmb / C

Fig.1. Normalised power dissipation.

PD% = 100⋅PD/P

ID%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140 160 180

Tmb / C

= f(Tmb)

D 25 ˚C

Normalised Current Derating

Fig.2. Normalised continuous drain current.

ID% = 100⋅ID/I

= f(Tmb); conditions: VGS ≥ 10 V

D 25 ˚C

10

1

0.1

0.01

0.001

Zth j-mb / (K/W)

D =

0.5

0.2

0.1

0.05

0.02

0

1E-05 1E-03 1E-01 1E+01

t / s

P

D

BUKx56-lv

p

t

D =

T

Fig.4. Transient thermal impedance.

Z

= f(t); parameter D = tp/T

th j-mb

ID / A

70
60
50
40
30
20
10

0

VGS / V =

0 2 4 6 8 10

20

15

VDS / V

10

BUK456-100A

8

Fig.5. Typical output characteristics

ID = f(VDS); parameter V

GS

p

t
T

t

7

6

5

4

.

1000

100

10

ID / A

RDS(ON) = VDS/ID

DC

1

1

10

VDS / V

BUK456-100A,B

A
B

tp = 10 us

100 us

1 ms
10 ms

100 ms

100

1000

Fig.3. Safe operating area. Tmb = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter t

RDS(ON) / Ohm

0.2

0.1

4.5 5 5.5

0

0 20 40 60 80

6

ID / A

Fig.6. Typical on-state resistance

R

p

= f(ID); parameter V

DS(ON)

6.5

BUK456-100A

VGS / V =

7

7.5

.

GS

8

10

20

April 1998 3 Rev 1.100