Philips PHP30NQ15T Datasheet

1. Description

2. Features

PHP30NQ15T; PHB30NQ15T

N-channel enhancement mode field-effect transistor

Rev. 02 — 12 March 2001 Product specification

N-channel enhancement mode field-effect powertransistorina plastic package using
TrenchMOS™1 technology.

Product availability:

PHP30NQ15T in SOT78 (TO-220AB)
PHB30NQ15T in SOT404 (D2-PAK).

■ Fast switching

■ Low on-state resistance.

3. Applications

■ DC to DC converters

■ Switched mode power supplies.

c

4. Pinning information

Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol

Pin Description Simplified outline Symbol

1 gate (g)
2 drain (d)
3 source (s)
mb drain (d)

[1] It is not possible to make connection to pin 2 of the SOT404 package.

c

[1]

MBK106

12mb3

mb

2

13

MBK116

SOT78 (TO-220AB) SOT404 (D2-PAK)

g

MBB076

d

s

1. TrenchMOS is a trademark of Royal Philips Electronics.

Philips Semiconductors

PHP30NQ15T; PHB30NQ15T

N-channel enhancement mode field-effect transistor

5. Quick reference data

Table 2: Quick reference data

Symbol Parameter Conditions Typ Max Unit

V
I
P
T
R

DS

D

tot
j
DSon

drain-source voltage (DC) Tj=25to175°C − 150 V
drain current (DC) Tmb=25°C; VGS=10V − 29 A
total power dissipation Tmb=25°C − 150 W
junction temperature − 175 °C
drain-source on-state resistance VGS=10V; ID=15A − 63 mΩ

6. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

DGR

V

GS

I

D

I

DM

P

tot

T

stg

T

j

Source-drain diode

I

S

I

SM

Avalanche ruggedness

E

AS

I

AS

drain-source voltage (DC) Tj=25to175°C − 150 V
drain-gate voltage (DC) Tj=25to175°C; RGS=20kΩ−150 V
gate-source voltage (DC) −±20 V
drain current (DC) Tmb=25°C; VGS=10V;

− 29 A

Figure 2 and 3

T

= 100 °C; VGS=10V;

mb

− 20 A

Figure 2

peak drain current Tmb=25°C; pulsed; tp≤ 10 µs;

− 116 A

Figure 3

total power dissipation Tmb=25°C; Figure 1 − 150 W
storage temperature −55 +175 °C
operating junction temperature −55 +175 °C

source (diode forward) current (DC) Tmb=25°C − 29 A
peak source (diode forward) current Tmb=25°C; pulsed; tp≤ 10 µs − 116 A

non-repetitive avalanche energy unclamped inductive load;

= 26 A; tp= 0.2 ms;

I

non-repetitive avalanche current − 29 A

AS

≤ 25 V; RGS=50Ω;

V

DD

= 10 V; starting Tj=25°C;

V

GS

− 502 mJ

Figure 4

9397 750 08037

Product specification Rev. 02 — 12 March 2001 2 of 14

© Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

PHP30NQ15T; PHB30NQ15T

N-channel enhancement mode field-effect transistor

120

P

der

(%)

100

80

60

40

20

0

0 25 50 75 100 125 150 175 200

P

P

der

tot

----------------------

P

tot 25 C°()

100%×=

03aa16

Tmb (oC)

Fig 1. Normalized total power dissipation as a

function of mounting base temperature.

tp = 10 µs

100 µs

1 ms

10 ms

100 ms

003aaa055

3

10

I

D

(A)

R

= VDS/ I

DSon

2

10

10

1

D

D.C.

120

I

der
(%)

100

80

60

40

20

0

0 25 50 75 100 125 150 175 200

03aa24

Tmb (oC)

VGS≥ 10 V

I

I

der

D

------------------ -

I

D25C°()

100%×=

Fig 2. Normalized continuous drain current as a

function of mounting base temperature.

2

10

I

AS
(A)

10

1

Tj prior to avalanche = 150 oC

003aaa054

25 oC

-1

10

2101

10

VDS (V)

3

10

-1

10

-3

10

-2

10

-1

10

110

tp (ms)

Tmb=25°C; IDM is single pulse. Unclamped inductive load; VDD≤ 25 V; RGS=50Ω;

VGS= 10 V; starting Tj=25°C and 150 °C.

Fig 3. Safe operating area; continuous and peak drain

currents as a function of drain-source voltage.

9397 750 08037

Fig 4. Non-repetitive avalanche ruggedness current

as a function of pulse duration.

© Philips Electronics N.V. 2001. All rights reserved.

Product specification Rev. 02 — 12 March 2001 3 of 14

Philips Semiconductors

PHP30NQ15T; PHB30NQ15T

N-channel enhancement mode field-effect transistor

7. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter Conditions Value Unit

R

th(j-mb)

R

th(j-a)

thermal resistance from junction to mounting
base

thermal resistance from junction to ambient SOT78 package; vertical in still air 60 K/W

7.1 Transient thermal impedance

Figure 5 1 K/W

SOT404 package; mounted on

50 K/W
printed circuit board; minimum
footprint.

003aaa056

t

p

δ =

T

t

p

t

T

-1

10

tp (s)

1

Z

th(j-mb)

(K/W)

10

1

δ = 0.5

0.2

0.1

-1

10

0.05

0.02

-5

10

Single Pulse

10

-4

-3

10

-2

10

-3

10

-6

10

P

-2

10

Fig 5. Transient thermal impedance from junction to mounting base as a function of

pulse duration.

9397 750 08037

© Philips Electronics N.V. 2001. All rights reserved.

Product specification Rev. 02 — 12 March 2001 4 of 14

Philips Semiconductors

PHP30NQ15T; PHB30NQ15T

N-channel enhancement mode field-effect transistor

8. Characteristics

Table 5: Characteristics

Tj=25°C unless otherwise specified

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

drain-source breakdown
voltage

V

I

DSS

I

GSS

R

GS(th)

DSon

gate-source threshold voltage ID= 1 mA; VDS=VGS;

drain-source leakage current VGS=0V; VDS= 150 V

gate-source leakage current VDS=0V; VGS= ±10 V − 0.02 100 nA
drain-source on-state

resistance

Dynamic characteristics

Q
Q
Q
C
C
C
t

d(on)

t

r

t

d(off)

t

f

g(tot)
gs

gd
iss
oss
rss

total gate charge ID= 30 A; VDS= 120 V;
gate-source charge − 10 − nC
gate-drain (Miller) charge − 20 27 nC
input capacitance VGS=0V; VDS=25V;
output capacitance − 240 − pF
reverse transfer capacitance − 98 − pF
turn-on delay time VDD= 75 V; RD= 2.7 Ω;
rise time − 50 − ns
turn-off delay time − 48 − ns
fall time − 38 − ns

Source-drain diode

V

SD

source-drain (diode forward)
voltage

t

rr

Q

r

reverse recovery time IS=20A;
recovered charge − 0.55 µC

ID= 250 µA; VGS=0V 150 −−V

Figure 10

=25°C234V

T

j

= 175 °C1−−V

T

j

=25°C − 0.05 10 µA

T

j

= 175 °C −−500 µA

T

j

VGS=10V; ID=15A;

Figure 8 and 9

=25oC − 60 63 mΩ

T

j

= 175 °C −−176 mΩ

T

j

− 55 − nC

=10V;Figure 15

V

GS

− 2390 − pF

f = 1 MHz; Figure 13

− 14 − ns

=10V; RG= 5.6 Ω

V

GS

IS= 25 A; VGS=0V;

− 0.9 1.2 V

Figure 14

− 105 − ns

/dt = −100 A/µs;

dI

S

=0V; VR=25V

V

GS

9397 750 08037

Product specification Rev. 02 — 12 March 2001 5 of 14

© Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

PHP30NQ15T; PHB30NQ15T

N-channel enhancement mode field-effect transistor

003aaa062

VGS (V)

DSon

003aaa064

Tj (oC)

35

I

D

(A)

30

25

20

15

10

5

0

0 0.4 0.8 1.2 1.6 2.0

Tj=25°CT

Fig 6. Output characteristics: drain current as a

function of drain-source voltage; typical values.

0.20

4.4 V

4.6 V

4.8 V

5.0 V

5.2 V

5.4 V

R

DSon

(Ω)

0.16

0.12

0.06

0.04

0

0 5 10 15 20 25

VGS = 10 V

6.0 V

VGS = 10V

003aaa057

6 V

5.4 V

5.2 V

5.0 V

4.8 V

4.6 V

4.4 V

V

DS

003aaa061

8.0 V

ID (A)

8 V

30

I

D

(A)

25

20

15

10

5

0

012345678910

(V)

=25°C and 175 °C; VDS> ID× R

j

Tj = 175 oC

Tj = 25 oC

Fig 7. Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

3.0

2.8

a

2.6

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

30

0-40 40 80 120 160

Tj=25°C

Fig 8. Drain-source on-state resistance as a function

of drain current; typical values.

9397 750 08037

Fig 9. Normalized drain-source on-state resistance

R

DSon

=

a

----------------------------

R

DSon 25 C°()

factor as a function of junction temperature.

© Philips Electronics N.V. 2001. All rights reserved.

Product specification Rev. 02 — 12 March 2001 6 of 14

Philips Semiconductors

PHP30NQ15T; PHB30NQ15T

N-channel enhancement mode field-effect transistor

4.5
4

V

GS(th)

(V)

3.5
3

2.5
2

1.5

1

0.5
0

-60 -20 20

ID= 1 mA; VDS=V

min

60 100 140 180

GS

003aaa023

max

typ

Tj (oC)

Fig 10. Gate-source threshold voltage as a function of

junction temperature.

40

g

fs

35

(S)

30

25

20

15

10

5

0

0

51015202530

Tj = 25 oC

Tj = 175 oC

003aaa063

ID (A)

max

4

VGS (V)

003aaa024

5

-2

10

I

D

-3

(A)

10

10

10

10

10

min

-4

-5

-6

-7

1

2

typ

3

Tj=25°C

Fig 11. Sub-threshold drain current as a function of

gate-source voltage.

4

10

C

, C

,

iss

oss

C

rss

(pF)

3

10

2

10

10

-1

10

11010

003aaa065

C

VDS (V)

C

iss

oss

C

rss

2

Tj=25°C and 175 °C; VDS> ID× R

DSon

Fig 12. Forward transconductance as a function of

drain current; typical values.

VGS= 0 V; f = 1 MHz

Fig 13. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical
values.

9397 750 08037

Product specification Rev. 02 — 12 March 2001 7 of 14

© Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

PHP30NQ15T; PHB30NQ15T

N-channel enhancement mode field-effect transistor

30

I

S

25

(A)

20

15

10

5

0

Tj = 175 oC

0 0.2 0.4

0.6

003aaa067

Tj = 25 oC

0.8 1.0 1.2
VSD (V)

14

V

GS

(V)

12

10

8

6

4

2

0

0102030405060

Tj=25°C and 175 °C; VGS=0V ID= 30 A; VDD= 30 V and 120 V

Fig 14. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical

Fig 15. Gate-source voltage as a function of gate

charge; typical values.

values.

003aaa066

VDD = 30 V

VDD = 120 V

QG (nC)

9397 750 08037

© Philips Electronics N.V. 2001. All rights reserved.

Product specification Rev. 02 — 12 March 2001 8 of 14

Philips Semiconductors

PHP30NQ15T; PHB30NQ15T

N-channel enhancement mode field-effect transistor

9. Package outline

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78

AE

p

A

1

q

D

1

D

(1)

L

1

b

L

1

L

2

mounting

base

Q

123

b

e

e

0 5 10 mm

scale

c

DIMENSIONS (mm are the original dimensions)

L

(1)

b

A

4.5

4.1

A

1.39

1.27

1

UNIT

mm

Note

1. Terminals in this zone are not tinned.

OUTLINE
VERSION

SOT78 SC-463-lead TO-220AB

b

c

1

1.3

1.0

0.7

0.4

0.9

0.7

IEC JEDEC EIAJ

D

D

15.8

6.4

15.2

5.9

REFERENCES

e

E

1

10.3

9.7

2.54

L

15.0

13.5

L

3.30

2.79

2

1

max.

3.0

PROJECTION

qQ

p

3.8

3.0

3.6

2.7

EUROPEAN

2.6

2.2

ISSUE DATE

00-09-07
01-02-16

Fig 16. SOT78

9397 750 08037

Product specification Rev. 02 — 12 March 2001 9 of 14

© Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

PHP30NQ15T; PHB30NQ15T

N-channel enhancement mode field-effect transistor

Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads
(one lead cropped)

A

E

D

1

D

H

D

mounting

base

2

A

1

SOT404

13

e e

DIMENSIONS (mm are the original dimensions)

0.64

0.46

D

max.

11

UNIT

mm

A

4.50

4.10

OUTLINE
VERSION

SOT404

A

1.40

1.27

b

1

0.85

0.60

IEC JEDEC EIAJ

D

1

1.60

10.30

1.20

9.70

REFERENCES

b

0 2.5 5 mm

scale

E

eLpH

2.90

2.54

2.10

D

15.80

14.80

Qc

2.60

2.20

L

p

c

Q

EUROPEAN

PROJECTION

ISSUE DATE

99-06-25
01-02-12

Fig 17. SOT404 (D2-PAK).

9397 750 08037

Product specification Rev. 02 — 12 March 2001 10 of 14

© Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

PHP30NQ15T; PHB30NQ15T

N-channel enhancement mode field-effect transistor

10. Revision history

Table 6: Revision history

Rev Date CPCN Description

02 20010312 Product specification; second version; supersedes initial version

PHB_PHP30NQ15T_1 of Aug. 1999

Max Qgd value added, Table 1

•

01 Aug. 1999 - Product specification; initial version

9397 750 08037

Product specification Rev. 02 — 12 March 2001 11 of 14

© Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

11. Data sheet status

PHP30NQ15T; PHB30NQ15T

N-channel enhancement mode field-effect transistor

Datasheet status Product status Definition

Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may

change in any manner without notice.

Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips

Semiconductors reserves the right to make changes at any time without notice in order to improve design and
supply the best possible product.

Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any

time without notice in order to improve design and supply the best possible product.

[1] Please consult the most recently issued data sheet before initiating or completing a design.

12. Definitions

Short-form specification — The data in a short-form specification is

extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.

Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.

Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.

[1]

13. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specified.

9397 750 08037

© Philips Electronics N.V. 2001 All rights reserved.

Product specification Rev. 02 — 12 March 2001 12 of 14

Philips Semiconductors

PHP30NQ15T; PHB30NQ15T

N-channel enhancement mode field-effect transistor

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(SCA72)

9397 750 08037

Product specification Rev. 02 — 12 March 2001 13 of 14

© Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

PHP30NQ15T; PHB30NQ15T

Contents

1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

4 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

5 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2

6 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

7 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

7.1 Transient thermal impedance. . . . . . . . . . . . . . 4

8 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12

12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

N-channel enhancement mode field-effect transistor

© Philips Electronics N.V. 2001. Printed in The Netherlands

All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.

The information presented in this document does not form part of any quotation or
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liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.

Date of release: 12 March 2001 Document order number: 9397 750 08037