Philips PHP26N10E Datasheet

Philips Semiconductors Product specification

PowerMOS transistor PHP26N10E

GENERAL DESCRIPTION QUICK REFERENCE DATA

N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
field-effect power transistor in a
plastic envelope featuring high V
avalanche energy capability, stable I
blocking voltage, fast switching and P
high thermal cycling performance R
withlowthermalresistance.Intended

DS

D

tot

DS(ON)

for use in Switched Mode Power
Supplies (SMPS), motor control
circuits and general purpose
switching applications.

PINNING - TO220AB PIN CONFIGURATION SYMBOL

Drain-source voltage 100 V
Drain current (DC) 26 A
Total power dissipation 125 W
Drain-source on-state resistance 0.08 Ω

PIN DESCRIPTION

tab

d

1 gate
2 drain
3 source

tab drain

123

g

s

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

D

I

DM

P

D

∆PD/∆TmbLinear derating factor Tmb > 25 ˚C - 0.833 W/K
V

GS

E

AS

I

AS

Tj, T

Continuous drain current Tmb = 25 ˚C; VGS = 10 V - 26 A

Tmb = 100 ˚C; VGS = 10 V - 18 A
Pulsed drain current Tmb = 25 ˚C - 104 A
Total dissipation Tmb = 25 ˚C - 125 W

Gate-source voltage - ± 30 V
Single pulse avalanche VDD ≤ 50 V; starting Tj = 25˚C; RGS = 50 Ω; - 230 mJ
energy VGS = 10 V
Peak avalanche current VDD ≤ 50 V; starting Tj = 25˚C; RGS = 50 Ω; - 26 A

VGS = 10 V
Operating junction and - 55 175 ˚C

stg

storage temperature range

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R

th j-mb

R

th j-a

February 1997 1 Rev 1.000

Thermal resistance junction to - - 1.2 K/W
mounting base
Thermal resistance junction to - 60 - K/W
ambient

Philips Semiconductors Product specification

PowerMOS transistor PHP26N10E

ELECTRICAL CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

∆V
∆T

R

DS(ON)

V

GS(TO)

g

fs

I

DSS

I

GSS

Q

g(tot)

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

d

L

d

L

s

C

iss

C

oss

C

rss

(BR)DSS
j

Drain-source breakdown VGS = 0 V; ID = 0.25 mA 100 - - V
voltage

/ Drain-source breakdown VDS = VGS; ID = 0.25 mA - 0.15 - V/K

voltage temperature coefficient
Drain-source on resistance VGS = 10 V; ID = 17 A - 0.07 0.08 Ω
Gate threshold voltage VDS = VGS; ID = 0.25 mA 2.0 3.0 4.0 V
Forward transconductance VDS = 50 V; ID = 17 A 8.7 16 - S
Drain-source leakage current VDS = 100 V; VGS = 0 V - 1 25 µA

VDS = 80 V; VGS = 0 V; Tj = 150 ˚C - 100 250 µA

Gate-source leakage current VGS = ±30 V; VDS = 0 V - 10 100 nA
Total gate charge ID = 17 A; V

Gate-source charge - 7 9 nC

= 80 V; VGS = 10 V - 35 45 nC

DD

Gate-drain (Miller) charge - 17 25 nC
Turn-on delay time VDD = 50 V; ID = 17 A; - 18 - ns

Turn-on rise time RG = 9.1 Ω; RD = 2.9 Ω -40-ns
Turn-off delay time - 125 - ns
Turn-off fall time - 50 - ns

Internal drain inductance Measured from contact screw on - 3.5 - nH

tab to centre of die

Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH

from package to centre of die

Internal source inductance Measured from source lead 6 mm - 7.5 - nH

from package to source bond pad

Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 1650 - pF
Output capacitance - 350 - pF
Feedback capacitance - 100 - pF

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous source current Tmb = 25˚C - - 26 A
(body diode)
Pulsed source current (body Tmb = 25˚C - - 104 A
diode)
Diode forward voltage IS = 28 A; VGS = 0 V - - 1.7 V

Reverse recovery time IS = 17 A; VGS = 0 V; - 90 - ns

dI/dt = 100 A/µs

Reverse recovery charge - 0.8 - µC

February 1997 2 Rev 1.000

Philips Semiconductors Product specification

PowerMOS transistor PHP26N10E

PD%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140 160 180

Normalised Power Derating

Tmb / C

Fig.1. Normalised power dissipation.

PD% = 100⋅PD/P

ID%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140 160 180

Tmb / C

= f(Tmb)

D 25 ˚C

Normalised Current Derating

Fig.2. Normalised continuous drain current.

ID% = 100⋅ID/I

= f(Tmb); conditions: VGS ≥ 10 V

D 25 ˚C

Zth j-mb / (K/W)

10

D =

1

0.5

0.2

0.1

0.1

0.05

0.02

0.01

0.001

0

1E-07 1E-05 1E-03 1E-01 1E+01

t / s

P

D

BUKx55-lv

p

t

D =

T

Fig.4. Transient thermal impedance.

Z

= f(t); parameter D = tp/T

th j-mb

ID / A

50

40

30

20

10

0

0 2 4 6 8 10

20

15

10

VDS / V

BUK455-100A

8

VGS / V =

Fig.5. Typical output characteristics

ID = f(VDS); parameter V

GS

p

t
T

t

7

6

5

4

.

ID / A

1000

100

RDS(ON) = VDS/ID

10

DC

1

1

10

VDS / V

Fig.3. Safe operating area. Tmb = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter t

A
B

BUK455-100A,B

tp = 10 us

100 us

1 ms
10 ms

100 ms

100

1000

RDS(ON) / Ohm

0.5
5 5.5

4.5

0.4

0.3

0.2

0.1

0

0 20 40

6

ID / A

Fig.6. Typical on-state resistance

R

p

= f(ID); parameter V

DS(ON)

BUK455-100A

VGS / V =

6.5
7

7.5
10

20

.

GS

February 1997 3 Rev 1.000