Philips PHP222 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D315
PHP222
Dual P-channel enhancement
mode MOS transistor
Preliminary specification
Supersedes data of 1998 Mar 24
File under Discrete Semiconductors, SC13
1998 Apr 01
Philips Semiconductors Preliminary specification
Dual P-channel enhancement
mode MOS transistor
FEATURES
• Very low on-state resistance
• High-speed switching
• No secondary breakdown
• Low threshold.
APPLICATIONS
• Power management
• DC-DC converters
• General purpose switch.
DESCRIPTION
Two P-channel enhancement mode MOS transistors in an
8-pin SOT96-1 (SO8) SMD plastic package.
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
PINNING - SOT96-1 (SO8)
PIN SYMBOL DESCRIPTION
1s
2g
3s
4g
5d
6d
7d
8d
handbook, halfpage
58
1
4
MAM119
1
1
2
2
2
2
1
1
source 1
gate 1
source 2
gate 2
drain 2
drain 2
drain 1
drain 1
d
d
1
1
gs
1
PHP222
d
2
2
1
d
2
gs
2
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
V
SD
V
GSO
V
GSth
I
D
R
DSon
P
tot
drain-source voltage (DC) −−30 V
source-drain diode forward voltage IS= −1.25 A; VGD=0 −−1.3 V
gate-source voltage (DC) open drain −±8V
gate-source threshold voltage ID= −1 mA; VDS=V
GS
−0.4 − V
drain current (DC) Ts=80°C −−3.2 A
drain-source on-state resistance ID= −1.6 A; VGS= −2.5 V − 220 mΩ
total power dissipation Ts=80°C − 3.5 W
1998 Apr 01 2
Philips Semiconductors Preliminary specification
Dual P-channel enhancement
PHP222
mode MOS transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per P-channel
V
DS
V
GSO
I
D
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
I
SM
drain-source voltage (DC) −−30 V
gate-source voltage (DC) open drain −±8V
drain current (DC) Ts=80°C; note 1 −−3.2 A
peak drain current note 2 −−12.8 A
total power dissipation Ts=80°C; note 3 − 3.5 W
T
=25°C; note 4 − 2.63 W
amb
T
=25°C; note 5 − 1.14 W
amb
=25°C; note 6 − 1.56 W
T
amb
storage temperature −55 +150 °C
operating junction temperature −55 +150 °C
source current (DC) Ts=80°C −−2.7 A
peak pulsed source current note 2 −−10.8 A
Notes
is the temperature at the soldering point of the drain lead.
1. T
s
2. Pulse width and duty cycle limited by maximum junction temperature.
3. Maximum permissible dissipation per MOS transistor. Both devices may be loaded up to 3.5 W at the same time.
4. Maximum permissible dissipation per MOS transistor. Device mounted on a printed-circuit board with an R
th a-tp
(ambient to tie-point) of 27.5 K/W.
5. Maximum permissible dissipation per MOS transistor. Device mounted on a printed-circuit board with an R
th a-tp
(ambient to tie-point) of 90 K/W.
6. Maximum permissible dissipation if only one MOS transistor dissipates. Device mounted on a printed-circuit board
with an R
(ambient to tie-point) of 90 K/W.
th a-tp
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point 20 K/W
1998 Apr 01 3
Loading...