Philips PHB20N06T, PHP20N06T Datasheet
1. Description
2. Features
PHP20N06T; PHB20N06T
N-channel TrenchMOS™ transistor
Rev. 01 — 22 February 2001 Product specification
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
PHP20N06T in SOT78 (TO-220AB)
PHB20N06T in SOT404 (D
■ Very low on-state resistance
■ Fast switching.
2
-PAK).
3. Applications
■ Switched mode power supplies
■ DC to DC converters.
c
4. Pinning information
Table 1: Pinning - SOT78, SOT404, simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
2 drain (d)
3 source (s)
mb mounting base;
connected to drain (d)
[1] It is not possible to make connection to pin 2 of the SOT404 package.
c
[1]
MBK106
12mb3
mb
2
13
MBK116
SOT78 (TO-220AB) SOT404 (D2-PAK)
g
MBB076
d
s
1. TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors
PHP20N06T; PHB20N06T
N-channel TrenchMOS™ transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
V
I
P
T
R
DS
D
tot
j
DSon
drain-source voltage (DC) Tj=25to175oC − 55 V
drain current (DC) Tmb=25°C; VGS=10V − 20.3 A
total power dissipation Tmb=25°C − 62 W
junction temperature − 175 °C
drain-source on-state resistance VGS= 10 V; ID=10A
=25°C6475mΩ
T
j
= 175 °C − 150 mΩ
T
j
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
DR
I
DRM
Avalanche ruggedness
W
DSS
drain-source voltage (DC) − 55 V
drain-gate voltage (DC) RGS=20kΩ−55 V
gate-source voltage (DC) −±20 V
drain current (DC) Tmb=25°C; VGS=10V;
− 20.3 A
Figure 2 and 3
T
= 100 °C; VGS=10V;Figure 2 − 14.3 A
mb
peak drain current Tmb=25°C; pulsed; tp≤ 10 µs;
− 81 A
Figure 3
total power dissipation Tmb=25°C; Figure 1 − 62 W
storage temperature −55 +175 °C
operating junction temperature −55 +175 °C
reverse drain current (DC) Tmb=25°C − 20.3 A
pulsed reverse drain current Tmb=25°C; pulsed; tp≤ 10 µs − 81 A
non-repetitive avalanche energy unclamped inductive load; ID=11A;
≤ 55 V; VGS= 10 V; RGS=50Ω;
V
DS
starting T
mb
=25°C
− 30.3 mJ
9397 750 07894
Product specification Rev. 01 — 22 February 2001 2 of 15
© Philips Electronics N.V. 2001. All rights reserved.
Philips Semiconductors
PHP20N06T; PHB20N06T
N-channel TrenchMOS™ transistor
120
P
der
(%)
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
P
P
der
tot
----------------------
P
tot 25 C°()
100%×=
03aa16
Tmb (oC)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
3
10
I
D
(A)
2
10
10
1
R
= VDS/ I
DSon
P
δ =
D
t
p
T
120
I
der
(%)
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
03aa24
Tmb (oC)
VGS≥ 4.5 V
I
I
der
D
------------------ -
I
D25C°()
100%×=
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
003aaa043
tp = 10 us
100 us
D.C.
1 ms
10 ms
t
p
-1
10
1 10
t
T
2
VDS (V)
10
Tmb=25°C; IDM single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 07894
Product specification Rev. 01 — 22 February 2001 3 of 15
© Philips Electronics N.V. 2001. All rights reserved.
Philips Semiconductors
PHP20N06T; PHB20N06T
N-channel TrenchMOS™ transistor
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter Conditions Value Unit
R
th(j-a)
R
th(j-mb)
thermal resistance from junction to ambient vertical in still air; SOT78 package 60 K/W
mounted on printed circuit board;
50 K/W
minimum footprint; SOT404
package
thermal resistance from junction to mounting
Figure 4 2.4 K/W
base
7.1 Transient thermal impedance
003aaa044
t
p
δ =
T
t
p
-1
10
t
T
1
tp (s)
Z
th(j-mb)
(K/W)
10
1
10
10
-1
-2
10
δ = 0.5
0.2
0.1
0.05
0.02
Single Pulse
-6
P
-5
10
-4
10
-3
10
-2
10
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 07894
© Philips Electronics N.V. 2001. All rights reserved.
Product specification Rev. 01 — 22 February 2001 4 of 15
Philips Semiconductors
PHP20N06T; PHB20N06T
N-channel TrenchMOS™ transistor
8. Characteristics
Table 5: Characteristics
Tj=25°C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
V
I
DSS
I
GSS
R
GS(th)
DSon
gate-source threshold voltage ID= 1 mA; VDS=VGS;
drain-source leakage current VDS= 55 V; VGS=0V
gate-source leakage current VGS= ±20 V; VDS=0V − 2 100 nA
drain-source on-state
resistance
Dynamic characteristics
Q
Q
Q
C
C
C
t
d(on)
t
r
t
d(off)
t
f
L
L
g(tot)
gs
gd
iss
oss
rss
d
s
total gate charge ID= 25 A; VDD=44V;
gate-source charge − 3 − nC
gate-drain (Miller) charge − 6 − nC
input capacitance VGS=0V; VDS=25V;
output capacitance − 92 113 pF
reverse transfer capacitance − 64 90 pF
turn-on delay time VDD= 30 V; RL= 1.2 Ω;
rise time − 50 − ns
turn-off delay time − 70 − ns
fall time − 40 − ns
internal drain inductance from drain lead 6 mm from
internal source inductance from source lead to source
ID= 0.25 mA; VGS=0V
=25°C55−−V
T
j
= −55 °C50−−V
T
j
Figure 9
=25°C234V
T
j
= 175 °C1−−V
T
j
= −55 °C −−4.4 V
T
j
=25°C − 0.05 10 µA
T
j
= 175 °C −−500 µA
T
j
VGS=10V; ID=10A;
Figure 7 and 8
=25°C − 64 75 mΩ
T
j
= 175 °C −−150 mΩ
T
j
− 11 − nC
=10V;Figure 14
V
GS
− 320 483 pF
f = 1 MHz; Figure 12
− 10 − ns
=10V; RG=10Ω;
V
GS
− 4.5 − nH
package to centre of die
from contact screw on
− 3.5 − nH
mounting base to centre of
die SOT78
from upper edge of drain
− 2.5 − nH
mounting base to centre of
die SOT404
− 7.5 − nH
bond pad
9397 750 07894
Product specification Rev. 01 — 22 February 2001 5 of 15
© Philips Electronics N.V. 2001. All rights reserved.
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