Philips PHB20N06T, PHP20N06T Datasheet

1. Description

2. Features

PHP20N06T; PHB20N06T

N-channel TrenchMOS™ transistor

Rev. 01 — 22 February 2001 Product specification

N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.

Product availability:

PHP20N06T in SOT78 (TO-220AB)
PHB20N06T in SOT404 (D

■ Very low on-state resistance

■ Fast switching.

2

-PAK).

3. Applications

■ Switched mode power supplies

■ DC to DC converters.

c

4. Pinning information

Table 1: Pinning - SOT78, SOT404, simplified outline and symbol

Pin Description Simplified outline Symbol

1 gate (g)
2 drain (d)
3 source (s)
mb mounting base;

connected to drain (d)

[1] It is not possible to make connection to pin 2 of the SOT404 package.

c

[1]

MBK106

12mb3

mb

2

13

MBK116

SOT78 (TO-220AB) SOT404 (D2-PAK)

g

MBB076

d

s

1. TrenchMOS is a trademark of Royal Philips Electronics.

Philips Semiconductors

PHP20N06T; PHB20N06T

N-channel TrenchMOS™ transistor

5. Quick reference data

Table 2: Quick reference data

Symbol Parameter Conditions Typ Max Unit

V
I
P
T
R

DS

D

tot
j
DSon

drain-source voltage (DC) Tj=25to175oC − 55 V
drain current (DC) Tmb=25°C; VGS=10V − 20.3 A
total power dissipation Tmb=25°C − 62 W
junction temperature − 175 °C
drain-source on-state resistance VGS= 10 V; ID=10A

=25°C6475mΩ

T

j

= 175 °C − 150 mΩ

T

j

6. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

DGR

V

GS

I

D

I

DM

P

tot

T

stg

T

j

Source-drain diode

I

DR

I

DRM

Avalanche ruggedness

W

DSS

drain-source voltage (DC) − 55 V
drain-gate voltage (DC) RGS=20kΩ−55 V
gate-source voltage (DC) −±20 V
drain current (DC) Tmb=25°C; VGS=10V;

− 20.3 A

Figure 2 and 3

T

= 100 °C; VGS=10V;Figure 2 − 14.3 A

mb

peak drain current Tmb=25°C; pulsed; tp≤ 10 µs;

− 81 A

Figure 3

total power dissipation Tmb=25°C; Figure 1 − 62 W
storage temperature −55 +175 °C
operating junction temperature −55 +175 °C

reverse drain current (DC) Tmb=25°C − 20.3 A
pulsed reverse drain current Tmb=25°C; pulsed; tp≤ 10 µs − 81 A

non-repetitive avalanche energy unclamped inductive load; ID=11A;

≤ 55 V; VGS= 10 V; RGS=50Ω;

V

DS

starting T

mb

=25°C

− 30.3 mJ

9397 750 07894

Product specification Rev. 01 — 22 February 2001 2 of 15

© Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

PHP20N06T; PHB20N06T

N-channel TrenchMOS™ transistor

120

P

der

(%)

100

80

60

40

20

0

0 25 50 75 100 125 150 175 200

P

P

der

tot

----------------------

P

tot 25 C°()

100%×=

03aa16

Tmb (oC)

Fig 1. Normalized total power dissipation as a

function of mounting base temperature.

3

10

I

D

(A)

2

10

10

1

R

= VDS/ I

DSon

P

δ =

D

t

p

T

120

I

der
(%)

100

80

60

40

20

0

0 25 50 75 100 125 150 175 200

03aa24

Tmb (oC)

VGS≥ 4.5 V

I

I

der

D

------------------ -

I

D25C°()

100%×=

Fig 2. Normalized continuous drain current as a

function of mounting base temperature.

003aaa043

tp = 10 us

100 us

D.C.

1 ms

10 ms

t

p

-1

10

1 10

t

T

2

VDS (V)

10

Tmb=25°C; IDM single pulse.

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

9397 750 07894

Product specification Rev. 01 — 22 February 2001 3 of 15

© Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

PHP20N06T; PHB20N06T

N-channel TrenchMOS™ transistor

7. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter Conditions Value Unit

R

th(j-a)

R

th(j-mb)

thermal resistance from junction to ambient vertical in still air; SOT78 package 60 K/W

mounted on printed circuit board;

50 K/W
minimum footprint; SOT404
package

thermal resistance from junction to mounting

Figure 4 2.4 K/W

base

7.1 Transient thermal impedance

003aaa044

t

p

δ =

T

t

p

-1

10

t

T

1

tp (s)

Z

th(j-mb)

(K/W)

10

1

10

10

-1

-2
10

δ = 0.5

0.2

0.1

0.05

0.02

Single Pulse

-6

P

-5

10

-4

10

-3

10

-2

10

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.

9397 750 07894

© Philips Electronics N.V. 2001. All rights reserved.

Product specification Rev. 01 — 22 February 2001 4 of 15

Philips Semiconductors

PHP20N06T; PHB20N06T

N-channel TrenchMOS™ transistor

8. Characteristics

Table 5: Characteristics

Tj=25°C unless otherwise specified

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

drain-source breakdown
voltage

V

I

DSS

I

GSS

R

GS(th)

DSon

gate-source threshold voltage ID= 1 mA; VDS=VGS;

drain-source leakage current VDS= 55 V; VGS=0V

gate-source leakage current VGS= ±20 V; VDS=0V − 2 100 nA
drain-source on-state

resistance

Dynamic characteristics

Q
Q
Q
C
C
C
t

d(on)

t

r

t

d(off)

t

f

L

L

g(tot)
gs

gd
iss
oss
rss

d

s

total gate charge ID= 25 A; VDD=44V;
gate-source charge − 3 − nC
gate-drain (Miller) charge − 6 − nC
input capacitance VGS=0V; VDS=25V;
output capacitance − 92 113 pF
reverse transfer capacitance − 64 90 pF
turn-on delay time VDD= 30 V; RL= 1.2 Ω;
rise time − 50 − ns
turn-off delay time − 70 − ns
fall time − 40 − ns
internal drain inductance from drain lead 6 mm from

internal source inductance from source lead to source

ID= 0.25 mA; VGS=0V

=25°C55−−V

T

j

= −55 °C50−−V

T

j

Figure 9

=25°C234V

T

j

= 175 °C1−−V

T

j

= −55 °C −−4.4 V

T

j

=25°C − 0.05 10 µA

T

j

= 175 °C −−500 µA

T

j

VGS=10V; ID=10A;

Figure 7 and 8

=25°C − 64 75 mΩ

T

j

= 175 °C −−150 mΩ

T

j

− 11 − nC

=10V;Figure 14

V

GS

− 320 483 pF

f = 1 MHz; Figure 12

− 10 − ns

=10V; RG=10Ω;

V

GS

− 4.5 − nH

package to centre of die
from contact screw on

− 3.5 − nH
mounting base to centre of
die SOT78

from upper edge of drain

− 2.5 − nH
mounting base to centre of
die SOT404

− 7.5 − nH
bond pad

9397 750 07894

Product specification Rev. 01 — 22 February 2001 5 of 15

© Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

PHP20N06T; PHB20N06T

N-channel TrenchMOS™ transistor

Table 5: Characteristics

…continued

Tj=25°C unless otherwise specified

Symbol Parameter Conditions Min Typ Max Unit

Source-drain diode

V

SD

source-drain (diode forward)
voltage

t

rr

Q

r

reverse recovery time IS=20A;dIS/dt = −100 A/µs
recovered charge − 120 − nC

60

I

D

(A)

50

40

30

20

10

0

0246810

IS= 25 A; VGS=0V;

Figure 15

= −10 V; VDS=30V

V

GS

003aaa045

VGS (V) =

16

12

10

9.0

8.0

7.5

7.0

6.5

6.0

5.0

VDS (V)

R

− 0.85 1.2 V

− 32 − ns

160

DSon

(mΩ)

140

120

100

80

60

40

5101520

003aaa051

VGS (V)

Tj=25°C; tp= 300 µsT

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values.

003aaa046

10

ID (A)

R

DSon
(mΩ)

Tj=25°C

180

VGS (V) =

5.566.5

160

140

120

100

80

60

40

0 1020304050

78

Fig 7. Drain-source on-state resistance as a function

of drain current; typical values.

=25°C; ID=25A

j

Fig 6. Drain-source on-state resistance as a function

of gate-source voltage; typical values.

2.2
2

a

1.8

1.6

1.4

1.2
1

0.8

0.6

0.4

0.2
0

-60 -20 20 60 100 140 180

R

=

----------------------------

R

DSon 25 C°()

DSon

a

Fig 8. Normalized drain-source on-state resistance

factor as a function of junction temperature.

03aa28

Tj (oC)

9397 750 07894

© Philips Electronics N.V. 2001. All rights reserved.

Product specification Rev. 01 — 22 February 2001 6 of 15

Philips Semiconductors

PHP20N06T; PHB20N06T

N-channel TrenchMOS™ transistor

5

4.5

V

GS(th)

4

(V)

3.5
3

2.5
2

1.5
1

0.5
0

-60 -20 20 60 100 140 180

ID= 1 mA; VDS=V

max.

typ.

min

GS

03aa32

Tj (oC)

Fig 9. Gate-source threshold voltage as a function of

junction temperature.

8

g

fs

(S)

6

4

003aaa047

-1

10

I

D

(A)

-2

10

-3

10

-4

10

-5

10

-6

10

012345

Tj=25°C; VDS=V

GS

03aa35

maxtypmin

VGS (V)

Fig 10. Sub-threshold drain current as a function of

gate-source voltage.

003aaa048

Ciss

Ciss, Coss,

Crss

(pF)

600

500

400

300

2

0

0 5 10 15 20 25

ID (A)

Tj=25°C; VDS=25V VGS= 0 V; f = 1 MHz

Fig 11. Forward transconductance as a function of

drain current; typical values.

Fig 12. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical
values.

200

100

Coss

Crss

0

-3

10

-2

10

1

10

VDS (V)

2

10

9397 750 07894

© Philips Electronics N.V. 2001. All rights reserved.

Product specification Rev. 01 — 22 February 2001 7 of 15

Philips Semiconductors

PHP20N06T; PHB20N06T

N-channel TrenchMOS™ transistor

25

I

D

(A)

20

15

10

5

0

Tj = 175 oC

Tj = 25 oC

0246810

003aaa049

VGS (V)

V

GS

(V)

VDS=25V Tj=25°C; ID=25A

Fig 13. Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

120

I

S

100

(A)

80

Fig 14. Gate-source voltage as a function of gate

charge; typical values.

003aaa052

10

V

= 44 V

8

V

= 14 V

DD

6

4

2

0

0 5 10 15

DD

QG (nC)

003aaa050

60

40

20

0

0 0.5 1.0 1.5 2.0

Tj = 175 oC

Tj = 25 oC

VSD (V)

VGS=0V

Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.

9397 750 07894

© Philips Electronics N.V. 2001. All rights reserved.

Product specification Rev. 01 — 22 February 2001 8 of 15

Philips Semiconductors

PHP20N06T; PHB20N06T

N-channel TrenchMOS™ transistor

9. Package outline

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78

AE

p

A

1

q

D

1

D

(1)

L

1

b

L

1

L

2

mounting

base

Q

123

b

e

e

0 5 10 mm

scale

c

DIMENSIONS (mm are the original dimensions)

L

(1)

b

A

4.5

4.1

A

1.39

1.27

1

UNIT

mm

Note

1. Terminals in this zone are not tinned.

OUTLINE
VERSION

SOT78 SC-463-lead TO-220AB

b

c

1

1.3

1.0

0.7

0.4

0.9

0.7

IEC JEDEC EIAJ

D

D

15.8

6.4

15.2

5.9

REFERENCES

e

E

1

10.3

9.7

2.54

L

15.0

13.5

L

3.30

2.79

2

1

max.

3.0

qQ

p

3.8

3.0

3.6

2.7

EUROPEAN

PROJECTION

2.6

2.2

ISSUE DATE

00-09-07
01-02-16

Fig 16. SOT78 (TO-220AB).

9397 750 07894

Product specification Rev. 01 — 22 February 2001 9 of 15

© Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

PHP20N06T; PHB20N06T

N-channel TrenchMOS™ transistor

Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads
(one lead cropped)

E

D

1

D

H

D

mounting

base

2

A

1

SOT404

A

13

e e

DIMENSIONS (mm are the original dimensions)

0.64

0.46

D

max.

11

UNIT

mm

A

4.50

4.10

OUTLINE
VERSION

SOT404

A

1.40

1.27

b

1

0.85

0.60

IEC JEDEC EIAJ

D

1

1.60

10.30

1.20

9.70

REFERENCES

b

0 2.5 5 mm

scale

E

eLpH

2.90

2.54

2.10

D

15.80

14.80

Qc

2.60

2.20

L

p

c

Q

EUROPEAN

PROJECTION

ISSUE DATE

99-06-25
01-02-12

Fig 17. SOT404 (D2-PAK).

9397 750 07894

Product specification Rev. 01 — 22 February 2001 10 of 15

© Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

10. Soldering

PHP20N06T; PHB20N06T

N-channel TrenchMOS™ transistor

handbook, full pagewidth

8.15

7.95

4.85

8.35

2.25

4.60

2.15

1.50

0.30

3.00

1.50

10.85

10.60

10.50

7.50

7.40

1.70

8.275

5.40

8.075

0.20

solder lands

solder resist

occupied area

solder paste

Dimensions in mm.

Fig 18. Reflow soldering footprint for SOT404.

5.08

1.20

1.30

1.55

MSD057

9397 750 07894

© Philips Electronics N.V. 2001. All rights reserved.

Product specification Rev. 01 — 22 February 2001 11 of 15

Philips Semiconductors

PHP20N06T; PHB20N06T

11. Revision history

Table 6: Revision history

Rev Date CPCN Description

01 20010222 - Product specification; initial version

N-channel TrenchMOS™ transistor

9397 750 07894

Product specification Rev. 01 — 22 February 2001 12 of 15

© Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

12. Data sheet status

PHP20N06T; PHB20N06T

N-channel TrenchMOS™ transistor

Datasheet status Product status Definition

Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may

change in any manner without notice.

Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips

Semiconductors reserves the right to make changes at any time without notice in order to improve design and
supply the best possible product.

Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any

time without notice in order to improve design and supply the best possible product.

[1] Please consult the most recently issued data sheet before initiating or completing a design.

13. Definitions

Short-form specification — The data in a short-form specification is

extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.

Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.

Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.

[1]

14. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specified.

9397 750 07894

© Philips Electronics N.V. 2001 All rights reserved.

Product specification Rev. 01 — 22 February 2001 13 of 15

Philips Semiconductors

PHP20N06T; PHB20N06T

N-channel TrenchMOS™ transistor

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(SCA71)

9397 750 07894

Product specification Rev. 01 — 22 February 2001 14 of 15

© Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

Contents

1 Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

4 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

5 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2

6 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

7 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

7.1 Transient thermal impedance . . . . . . . . . . . . . . 4

8 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12

12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13

13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

14 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

PHP20N06T; PHB20N06T

N-channel TrenchMOS™ transistor

© Philips Electronics N.V. 2001. Printed in The Netherlands

All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.

The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.

Date of release: 22 February 2001 Document order number: 9397 750 07894