Philips Semiconductors Objective Specification
PowerMOS transistor PHP1N50E
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope featuring high V avalanche energy capability, stable I blocking voltage, fast switching and P high thermal cycling performance R withlowthermalresistance.Intended
DS
D
tot
DS(ON)
for use in Switched Mode Power
Supplies (SMPS), motor control
circuits and general purpose
switching applications.
PINNING - TO220AB PIN CONFIGURATION SYMBOL
Drain-source voltage 500 V
Drain current (DC) 2 A
Total power dissipation 50 W
Drain-source on-state resistance 5 Ω
PIN DESCRIPTION
tab
d
1 gate
2 drain
3 source
tab drain
123
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
±V
I
D
I
DM
I
DR
I
DRM
P
T
T
DS
DGR
GS
tot
stg
j
Drain-source voltage - 500 V
Drain-gate voltage RGS = 20 kΩ - 500 V
Gate-source voltage - 30 V
Drain current (DC) Tmb = 25 ˚C - 2.0 A
Tmb = 100 ˚C - 1.3 A
Drain current (pulse peak Tmb = 25 ˚C - 8.0 A
value)
Source-drain diode current Tmb = 25 ˚C - 2.0 A
(DC)
Source-drain diode current Tmb = 25 ˚C - 8.0 A
(pulse peak value)
Total power dissipation Tmb = 25 ˚C - 50 W
Storage temperature -55 150 ˚C
Junction temperature - 150 ˚C
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
W
DSS
W
DSR
1. Pulse width and frequency limited by T
October 1996 1 Rev 1.000
Drain-source non-repetitive ID = 2 A ; VDD ≤ 50 V ; VGS = 10 V ;
unclamped inductive turn-off RGS = 50 Ω
energy Tj = 25˚C prior to surge - 120 mJ
1
Drain-source repetitive ID = 2 A ; VDD ≤ 50 V ; VGS = 10 V ; - 3.6 mJ
Tj = 100˚C prior to surge - 20 mJ
unclamped inductive turn-off RGS = 50 Ω ; Tj ≤ 150 ˚C
energy
j(max)
Philips Semiconductors Objective specification
PowerMOS transistor PHP1N50E
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GS(TO)
I
DSS
I
GSS
R
DS(ON)
V
SD
Thermal resistance junction to - - 2.5 K/W
mounting base
Thermal resistance junction to - 60 - K/W
ambient
Drain-source breakdown VGS = 0 V; ID = 0.25 mA 500 - - V
voltage
Gate threshold voltage VDS = VGS; ID = 0.25 mA 2.0 3.0 4.0 V
Drain-source leakage current VDS = 500 V; VGS = 0 V; Tj = 25 ˚C - 10 100 µA
VDS = 400 V; VGS = 0 V; Tj = 125 ˚C - 0.1 1.0 mA
Gate-source leakage current VGS = ±30 V; VDS = 0 V - 10 100 nA
Drain-source on-state VGS = 10 V; ID = 1 A - 4.5 5.0 Ω
resistance
Source-drain diode forward IF = 2 A ;VGS = 0 V - 0.8 1.2 V
voltage
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
g
fs
C
iss
C
oss
C
rss
Q
g(tot)
Q
gs
Q
gd
t
d on
t
r
t
d off
t
f
t
rr
Q
rr
L
d
L
d
L
s
Forward transconductance VDS = 15 V; ID = 1 A 0.5 0.9 - S
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 230 300 pF
Output capacitance - 35 50 pF
Feedback capacitance - 14 30 pF
Total gate charge VGS = 10 V; ID = 2 A; V
Gate to source charge - 1 - nC
= 400 V - 10 - nC
DS
Gate to drain (Miller) charge - 5 - nC
Turn-on delay time VDD = 30 V; ID = 2 A; - 10 15 ns
Turn-on rise time VGS = 10 V; RGS = 50 Ω; - 30 45 ns
Turn-off delay time R
Turn-off fall time - 20 30 ns
= 50 Ω - 3040ns
GEN
Source-drain diode reverse IF = 2 A; -dIF/dt = 100 A/µs; - 350 - ns
recovery time
Source-drain diode reverse VGS = 0 V; VR = 100 V - 2.5 - µC
recovery charge
Internal drain inductance Measured from contact screw on - 3.5 - nH
tab to centre of die
Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH
from package to centre of die
Internal source inductance Measured from source lead 6 mm - 7.5 - nH
from package to source bond pad
October 1996 2 Rev 1.000
Philips Semiconductors Objective specification
PowerMOS transistor PHP1N50E
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10,3
max
1,3
3,7
4,5
max
3,0 max
not tinned
1,3
max
(2x)
123
2,54 2,54
2,8
3,0
13,5
min
0,9 max (3x)
5,9
min
15,8
max
0,6
2,4
Fig.1. TO220AB; pin 2 connected to mounting base.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for TO220 envelopes.
3. Epoxy meets UL94 V0 at 1/8".
October 1996 3 Rev 1.000
Philips Semiconductors Objective specification
PowerMOS transistor PHP1N50E
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1996 4 Rev 1.000
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