Philips PHB14NQ20T, PHP14NQ20T Datasheet
Philips Semiconductors Product specification
TrenchMOS transistor PHP14NQ20T, PHB14NQ20T
FEATURES SYMBOL QUICK REFERENCE DATA
• ’Trench’ technology
• Low on-state resistance V
d
= 200 V
DSS
• Fast switching
• High thermal cycling performance I
• Low thermal resistance
g
s
R
DS(ON)
= 14 A
D
≤ 230 mΩ
GENERAL DESCRIPTION
N-channelenhancementmode field-effect power transistor in a plastic envelope using ’trench’ technology. The device
hasverylowon-stateresistance.It isintendedforuse indctodc convertersandgeneralpurposeswitchingapplications.
The PHP14NQ20T is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB14NQ20T is supplied in the SOT404 (D2PAK) surface mounting package.
PINNING SOT78 (TO220AB) SOT404 (D2PAK)
PIN DESCRIPTION
1 gate
2 drain
1
3 source
tab drain
tab
123
tab
2
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DSS
V
DGR
V
GS
I
D
I
DM
P
D
Tj, T
1 It is not possible to make connection to pin:2 of the SOT404 package
October 1999 1 Rev 1.000
Drain-source voltage Tj = 25 ˚C to 175˚C - 200 V
Drain-gate voltage Tj = 25 ˚C to 175˚C; RGS = 20 kΩ - 200 V
Gate-source voltage - ± 20 V
Continuous drain current Tmb = 25 ˚C; VGS = 10 V - 14 A
Tmb = 100 ˚C; VGS = 10 V - 10 A
Pulsed drain current Tmb = 25 ˚C - 56 A
Total power dissipation Tmb = 25 ˚C - 125 W
Operating junction and - 55 175 ˚C
stg
storage temperature
Philips Semiconductors Product specification
TrenchMOS transistor PHP14NQ20T, PHB14NQ20T
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
E
AS
I
AS
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
Non-repetitive avalanche Unclamped inductive load, IAS = 14 A; - 70 mJ
energy tp = 20 µs; Tj prior to avalanche = 25˚C;
VDD ≤ 25 V; RGS = 50 Ω; VGS = 10 V
Peak non-repetitive - 14 A
avalanche current
Thermal resistance junction - - 1.2 K/W
to mounting base
Thermal resistance junction SOT78 package, in free air - 60 - K/W
to ambient SOT404 package, pcb mounted, minimum - 50 - K/W
footprint
ELECTRICAL CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GS(TO)
R
DS(ON)
g
fs
I
GSS
I
DSS
Q
g(tot)
Q
gs
Q
gd
t
d on
t
r
t
d off
t
f
L
d
L
d
L
s
C
iss
C
oss
C
rss
Drain-source breakdown VGS = 0 V; ID = 0.25 mA; 200 - - V
voltage Tj = -55˚C 178 - - V
Gate threshold voltage VDS = VGS; ID = 1 mA 2 3 4 V
Tj = 175˚C 1 - - V
Tj = -55˚C - - 6 V
Drain-source on-state VGS = 10 V; ID = 7 A - 150 230 mΩ
resistance VGS = 10 V; ID = 7 A; Tj = 175˚C - - 633 mΩ
Forward transconductance VDS = 25 V; ID = 7 A 6 12.1 - S
Gate source leakage current VGS = ± 10 V; VDS = 0 V - 10 100 nA
Zero gate voltage drain VDS = 200 V; VGS = 0 V; - 0.05 10 µA
current Tj = 175˚C - - 500 µA
Total gate charge ID = 14 A; V
= 160 V; VGS = 10 V - 38 - nC
DD
Gate-source charge - 4 - nC
Gate-drain (Miller) charge - 13.3 - nC
Turn-on delay time VDD = 30 V; ID = 3 A; - 25 - ns
Turn-on rise time VGS = 10 V; RGS = 50 Ω -40-ns
Turn-off delay time R
= 50 Ω -83-ns
gen
Turn-off fall time - 31 - ns
Internal drain inductance Measured tab to centre of die - 3.5 - nH
Internal drain inductance Measured from drain lead to centre of die - 4.5 - nH
(SOT78 package only)
Internal source inductance Measured from source lead to source - 7.5 - nH
bond pad
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 1500 - pF
Output capacitance - 128 - pF
Feedback capacitance - 60 - pF
October 1999 2 Rev 1.000
Philips Semiconductors Product specification
TrenchMOS transistor PHP14NQ20T, PHB14NQ20T
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous source current - - 14 A
(body diode)
Pulsed source current (body - - 56 A
diode)
Diode forward voltage IF = 14 A; VGS = 0 V - 1.0 1.5 V
Reverse recovery time IF = 14 A; -dIF/dt = 100 A/µs; - 135 - ns
Reverse recovery charge VGS = 0 V; VR = 30 V - 690 - nC
October 1999 3 Rev 1.000
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