Philips PHB112N06T, PHP112N06T Datasheet

1. Description

2. Features

PHP112N06T; PHB112N06T

N-channel enhancement mode field-effect transistor

Rev. 01 — 07 March 2001 Product specification

N-channel enhancement mode field-effect powertransistorina plastic package using
TrenchMOS™1 technology.

Product availability:

PHP112N06T in SOT78 (TO-220AB)
PHB112N06T in SOT404 (D2-PAK).

■ Fast switching

■ Very low on-state resistance.

3. Applications

■ General purpose switching

■ Switched mode power supplies.

c

4. Pinning information

Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol

Pin Description Simplified outline Symbol

1 gate (g)
2 drain (d)
3 source (s)
mb mounting base;

[1] It is not possible to make connection to pin 2 of the SOT404 package.

c

connected to
drain (d)

[1]

12mb3

SOT78 (TO-220AB)

MBK106

mb

2

13

SOT404 (D

2-

PAK)

MBK116

g

MBB076

d

s

1. TrenchMOS is a trademark of Royal Philips Electronics.

Philips Semiconductors

PHP112N06T; PHB112N06T

N-channel enhancement mode field-effect transistor

5. Quick reference data

Table 2: Quick reference data

Symbol Parameter Conditions Typ Max Unit

V
I
P
T
R

DS

D

tot
j
DSon

drain-source voltage (DC) Tj=25to175°C − 55 V
drain current (DC) Tmb=25°C; VGS=10V − 75 A
total power dissipation Tmb=25°C − 200 W
junction temperature − 175 °C
drain-source on-state resistance Tj=25°C; VGS=10V; ID=25A 7.2 8 mΩ

6. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

DGR

V

GS

I

D

I

DM

P

tot

T

stg

T

j

Source-drain diode

I

S

I

SM

Avalanche ruggedness

E

AS

drain-source voltage (DC) Tj=25to175°C − 55 V
drain-gate voltage (DC) Tj=25to175°C; RGS=20kΩ−55 V
gate-source voltage (DC) −±20 V
drain current (DC) Tmb=25°C; VGS=10V

− 75 A

Figure 2 and 3

T

= 100 °C; VGS=10V

mb

− 52.5 A

Figure 2 and 3

peak drain current Tmb=25°C; pulsed; tp≤ 10 µs;

− 400 A

Figure 3

total power dissipation Tmb=25°C; Figure 1 − 200 W
storage temperature −55 175 °C
operating junction temperature −55 175 °C

source (diode forward) current

Tmb=25°C − 75 A
(DC)

peak source (diode forward)

Tmb=25°C; pulsed; tp≤ 10 µs − 400 A
current

non-repetitive avalanche energy unclamped inductive load;

= 60 A; tp= 0.1 ms; VDD≤ 25 V;

I

AS

=50Ω; VGS= 5 V; starting

R

GS

=25°C; Figure 4

T

j

− 360 mJ

9397 750 08108

Product specification Rev. 01 — 07 March 2001 2 of 14

© Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

PHP112N06T; PHB112N06T

N-channel enhancement mode field-effect transistor

120

P

der

(%)

100

80

60

40

20

0

0 25 50 75 100 125 150 175 200

P

P

der

tot

----------------------

P

tot 25 C°()

100%×=

03aa16

Tmb (oC)

Fig 1. Normalized total power dissipation as a

function of mounting base temperature.

3

10

R

= VDS / I

DSon

I

D

(A)

2

10

10

P

D

t

DC

p

δ =

T

003aaa069

tp =

1 µs

10 µs

100 µs

1 ms

10 ms

0.1 s

120

I

der
(%)

100

80

60

40

20

0

0 25 50 75 100 125 150 175 200

03aa24

Tmb (oC)

VGS≥ 10 V

I

I

der

D

------------------ -

I

D25C°()

100%×=

Fig 2. Normalized continuous drain current as a

function of mounting base temperature.

2

10

I

AS

(A)

10

Tj prior to avalanche = 150 oC

003aaa080

25 oC

t

1

1

t

p

T

10

VDS (V)

2

10

1

-3

10

-2

10

-1

10

1

tp ms

10

Tmb=25°C; IDM is single pulse. Unclamped inductive load; VDD≤ 15 V; RGS=50Ω;

VGS= 5 V; starting Tj=25°C and 150 °C.

Fig 3. Safe operating area; continuous and peak drain

currents as a function of drain-source voltage.

9397 750 08108

Fig 4. Non-repetitive avalanche ruggedness current

as a function of pulse duration.

© Philips Electronics N.V. 2001. All rights reserved.

Product specification Rev. 01 — 07 March 2001 3 of 14

Philips Semiconductors

PHP112N06T; PHB112N06T

N-channel enhancement mode field-effect transistor

7. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter Conditions Value Unit

R

th(j-mb)

R

th(j-a)

thermal resistance from junction to mounting
base

thermal resistance from junction to ambient SOT78 package; vertical in still air 60 K/W

7.1 Transient thermal impedance

Figure 5 0.75 K/W

SOT404 package; mounted on

50 K/W
printed circuit board; minimum
footprint.

003aaa070

t

p

δ =

T

t

p

t

T

t

p

10110

(s)

Z

th (j-mb)

(K/W)

10

1

δ = 0.5

0.2

-1

10

10

10

0.1

0.05

0.02

-2

-3
10

-6

-7

10

Single Pulse

-5

10

-4

10

-3

10

P

-1

-2

10

Fig 5. Transient thermal impedance from junction to mounting base as a function of

pulse duration.

9397 750 08108

© Philips Electronics N.V. 2001. All rights reserved.

Product specification Rev. 01 — 07 March 2001 4 of 14

Philips Semiconductors

PHP112N06T; PHB112N06T

N-channel enhancement mode field-effect transistor

8. Characteristics

Table 5: Characteristics

Tj=25°C unless otherwise specified

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

drain-source breakdown
voltage

V

I

DSS

I

GSS

R

GS(th)

DSon

gate-source threshold voltage ID= 1 mA; VDS=VGS;

drain-source leakage current VGS=0V; VDS=55V

gate-source leakage current VDS=0V; VGS= ±20 V − 2 100 nA
drain-source on-state

resistance

Dynamic characteristics

Q
Q
Q
C
C
C
t

d(on)

t

r

t

d(off)

t

f

g(tot)
gs

gd
iss
oss
rss

total gate charge ID= 50 A; VDD=44V;
gate-source charge − 24 − nC
gate-drain (Miller) charge − 29 nC
input capacitance VGS=0V; VDS=25V;
output capacitance − 720 863 pF
reverse transfer capacitance − 389 533 pF
turn-on delay time VDD= 30 V; RD= 1.2 Ω;
rise time − 94 141 ns
turn-off delay time − 100 140 ns
fall time − 80 112 ns

Source-drain diode

V

SD

source-drain (diode forward)
voltage

t

rr

Q

r

reverse recovery time IS=75A;
recovered charge − 0.17 −µC

ID= 250 µA; VGS=0V 55 −−V

Figure 10

=25°C 2.0 3.0 4.0 V

T

j

= 175 °C 1.0 −−V

T

j

=25°C − 0.05 10 µA

T

j

= 175 °C −−500 µA

T

j

VGS=10V; ID=25A;

Figure 8 and 9

=25oC − 7.2 8.0 mΩ

T

j

= 175 °C −−16 mΩ

T

j

− 87 − nC

=10V;Figure 15

V

GS

− 3264 4352 pF

f = 1 MHz; Figure 13

− 24 36 ns

=5V; RG=10Ω

V

GS

IS= 25 A; VGS=0V;

− 0.85 1.2 V

Figure 14

− 65 − ns

/dt = −100 A/µs;

dI

S

= -10 V; VR=30V

V

GS

9397 750 08108

Product specification Rev. 01 — 07 March 2001 5 of 14

© Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

PHP112N06T; PHB112N06T

N-channel enhancement mode field-effect transistor

003aaa074

Tj = 25 oC

VGS (V)

DSon

003aaa076

Tj (oC)

V

GS

003aaa071

6.5 V

6.0 V

5.5 V

5.0 V

= 4.5 V

VDS (V)

003aaa072

6.5 V

7.0 V

ID (A)

7.0 V

7.5 V

8.0 V

9.0 V

10.0 V
125

100

90

I

D

(A)

80
70
60
50

40
30
20
10

0

10 234567

=25°C and 175 °C; VDS> ID× R

j

Tj = 175 oC

Fig 7. Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

2.0

1.8

a

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2
0

0-40-80 40 80 120 160 200

160

18 V

I

D

(A)

140

120

100

80

60

40

20

0

0246810

10 V

8.0 V

Tj=25°CT

Fig 6. Output characteristics: drain current as a

function of drain-source voltage; typical values.

25

VGS = 5.5 V

23

R

DSon

(mΩ)

21
19
17

15
13

11

9
7

5

5

25 45 65 85 105

6.0 V

Tj=25°C

Fig 8. Drain-source on-state resistance as a function

of drain current; typical values.

9397 750 08108

Fig 9. Normalized drain-source on-state resistance

R

DSon

a

=

----------------------------

R

DSon 25 C°()

factor as a function of junction temperature.

© Philips Electronics N.V. 2001. All rights reserved.

Product specification Rev. 01 — 07 March 2001 6 of 14

Philips Semiconductors

PHP112N06T; PHB112N06T

N-channel enhancement mode field-effect transistor

5

V

GS(th)

(V)

4

3

2

1

0

ID= 1 mA; VDS=V

max.

typ

min

0 40 80 120 160 200-40-80

GS

003aaa077

Tj (oC)

Fig 10. Gate-source threshold voltage as a function of

junction temperature.

60

g

fs

(S)

50

40

003aaa075

98%

003aaa078

V

GS

(V)

-1

10

I

D

(A)

-2

10

2%

-3

10

-4

10

-5

10

-6

10

012345

typ

Tj=25°C

Fig 11. Sub-threshold drain current as a function of

gate-source voltage.

003aaa079

C
C
C

(nF)

iss
oss
rss

7

,

,

C

6

5

iss

Coss

30

20

10

0

100806040200

ID (A)

Tj=25°C; VDS= 25 V VGS= 0 V; f = 1 MHz

Fig 12. Forward transconductance as a function of

drain current; typical values.

Fig 13. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical
values.

4

C

3

2

1

0

rss

-2

10

-1

10

1

10 10

2

V

(V)

DS

9397 750 08108

© Philips Electronics N.V. 2001. All rights reserved.

Product specification Rev. 01 — 07 March 2001 7 of 14

Philips Semiconductors

PHP112N06T; PHB112N06T

N-channel enhancement mode field-effect transistor

100

I

S

90

(A)

80
70
60
50
40
30
20
10

0

0 0.2 1.0 1.20.4 0.6 0.8

003aaa082

Tj = 150 oC

Tj = 25 oC

VSD (V)

10

ID = 50 A

V

GS

Tj = 25 oC

(V)

8

6

4

2

0

0 20 40 60 80 100

Tj=25°C and 150 °C; VGS=0V ID= 50 A; VDD= 14 V and 44 V

Fig 14. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical

Fig 15. Gate-source voltage as a function of gate

charge; typical values.

values.

003aaa081

VDD = 14 V

VDD = 44 V

QG (nC)

9397 750 08108

© Philips Electronics N.V. 2001. All rights reserved.

Product specification Rev. 01 — 07 March 2001 8 of 14

Philips Semiconductors

PHP112N06T; PHB112N06T

N-channel enhancement mode field-effect transistor

9. Package outline

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78

AE

p

A

1

q

D

1

D

(1)

L

1

b

L

1

L

2

mounting

base

Q

123

b

e

e

0 5 10 mm

scale

c

DIMENSIONS (mm are the original dimensions)

L

(1)

b

A

4.5

4.1

A

1.39

1.27

1

UNIT

mm

Note

1. Terminals in this zone are not tinned.

OUTLINE
VERSION

SOT78 SC-463-lead TO-220AB

b

c

1

1.3

1.0

0.7

0.4

0.9

0.7

IEC JEDEC EIAJ

D

D

15.8

6.4

15.2

5.9

REFERENCES

e

E

1

10.3

9.7

2.54

L

15.0

13.5

L

3.30

2.79

2

1

max.

3.0

qQ

p

3.8

3.0

3.6

2.7

EUROPEAN

PROJECTION

2.6

2.2

ISSUE DATE

00-09-07
01-02-16

Fig 16. SOT78

9397 750 08108

Product specification Rev. 01 — 07 March 2001 9 of 14

© Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

PHP112N06T; PHB112N06T

N-channel enhancement mode field-effect transistor

Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads
(one lead cropped)

A

E

D

1

D

H

D

mounting

base

2

A

1

SOT404

13

e e

DIMENSIONS (mm are the original dimensions)

0.64

0.46

D

max.

11

UNIT

mm

A

4.50

4.10

OUTLINE
VERSION

SOT404

A

1.40

1.27

b

1

0.85

0.60

IEC JEDEC EIAJ

D

1

1.60

10.30

1.20

9.70

REFERENCES

b

0 2.5 5 mm

scale

E

eLpH

2.90

2.54

2.10

D

15.80

14.80

Qc

2.60

2.20

L

p

c

Q

EUROPEAN

PROJECTION

ISSUE DATE

99-06-25
01-02-12

Fig 17. SOT404 (D2-PAK).

9397 750 08108

Product specification Rev. 01 — 07 March 2001 10 of 14

© Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

PHP112N06T; PHB112N06T

N-channel enhancement mode field-effect transistor

10. Revision history

Table 6: Revision history

Rev Date CPCN Description

01 20010307 - Product specification. Initial version.

9397 750 08108

Product specification Rev. 01 — 07 March 2001 11 of 14

© Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

11. Data sheet status

PHP112N06T; PHB112N06T

N-channel enhancement mode field-effect transistor

Datasheet status Product status Definition

Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may

change in any manner without notice.

Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips

Semiconductors reserves the right to make changes at any time without notice in order to improve design and
supply the best possible product.

Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any

time without notice in order to improve design and supply the best possible product.

[1] Please consult the most recently issued data sheet before initiating or completing a design.

12. Definitions

Short-form specification — The data in a short-form specification is

extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.

Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.

Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.

[1]

13. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specified.

9397 750 08108

© Philips Electronics N.V. 2001 All rights reserved.

Product specification Rev. 01 — 07 March 2001 12 of 14

Philips Semiconductors

PHP112N06T; PHB112N06T

N-channel enhancement mode field-effect transistor

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(SCA71)

9397 750 08108

Product specification Rev. 01 — 07 March 2001 13 of 14

© Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

Contents

1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

4 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

5 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2

6 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

7 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

7.1 Transient thermal impedance. . . . . . . . . . . . . . 4

8 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12

12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

PHP112N06T; PHB112N06T

N-channel enhancement mode field-effect transistor

© Philips Electronics N.V. 2001. Printed in The Netherlands

All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.

The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.

Date of release: 07 March 2001 Document order number: 9397 750 08108