Philips PHP10N60E Datasheet
Philips Semiconductors Preliminary specification
PowerMOS transistors PHP10N60E
Avalanche energy rated
FEATURES SYMBOL QUICK REFERENCE DATA
• Repetitive Avalanche Rated
• Fast switching V
d
= 600 V
DSS
• Stable off-state characteristics
• High thermal cycling performance I
• Low thermal resistance
g
s
R
DS(ON)
= 9.6 A
D
≤ 0.75 Ω
GENERAL DESCRIPTION PINNING SOT78 (TO220AB)
N-channel, enhancement mode PIN DESCRIPTION
field-effect power transistor,
intendedforuse in off-line switched 1 gate
mode power supplies, T.V. and
computer monitor power supplies, 2 drain
d.c.tod.c.converters,motorcontrol
circuits and general purpose 3 source
switching applications.
case drain
The PHP10N60E is supplied in the
SOT78 (TO220AB) conventional
leaded package.
tab
drain
123
gate source
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DSS
V
DGR
V
GS
I
D
I
DM
P
D
Tj, T
Drain-source voltage Tj = 25 ˚C to 150˚C - 600 V
Drain-gate voltage Tj = 25 ˚C to 150˚C; RGS = 20 kΩ - 600 V
Gate-source voltage - ± 30 V
Continuous drain current Tmb = 25 ˚C; VGS = 10 V - 9.6 A
Tmb = 100 ˚C; VGS = 10 V - 6.1 A
Pulsed drain current Tmb = 25 ˚C - 38 A
Total dissipation Tmb = 25 ˚C - 167 W
Operating junction and - 55 150 ˚C
stg
storage temperature range
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
E
AS
E
AR
IAS, I
1 pulse width and repetition rate limited by Tj max.
August 1998 1 Rev 1.000
Non-repetitive avalanche Unclamped inductive load, IAS = 9.6 A; - 813 mJ
energy tp = 0.2 ms; Tj prior to avalanche = 25˚C;
VDD ≤ 50 V; RGS = 50 Ω; VGS = 10 V
Repetitive avalanche energy1IAR = 9.6 A; tp = 1 µs; Tj prior to - 28 mJ
avalanche = 25˚C; RGS = 50 Ω; VGS = 10 V
Repetitive and non-repetitive - 9.6 A
AR
avalanche current
Philips Semiconductors Preliminary specification
PowerMOS transistors PHP10N60E
Avalanche energy rated
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
∆V
(BR)DSS
∆T
j
R
DS(ON)
V
GS(TO)
g
fs
I
DSS
I
GSS
Q
g(tot)
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
d
L
d
L
s
C
iss
C
oss
C
rss
Thermal resistance junction - - 0.75 K/W
to mounting base
Thermal resistance junction - 60 - K/W
to ambient
Drain-source breakdown VGS = 0 V; ID = 0.25 mA 600 - - V
voltage
/ Drain-source breakdown VDS = VGS; ID = 0.25 mA - 0.1 - %/K
voltage temperature
coefficient
Drain-source on resistance VGS = 10 V; ID = 4.4 A - 0.7 0.75 Ω
Gate threshold voltage VDS = VGS; ID = 0.25 mA 2.0 3.0 4.0 V
Forward transconductance VDS = 30 V; ID = 4.4 A 4 5.5 - S
Drain-source leakage current VDS = 600 V; VGS = 0 V - 2 100 µA
VDS = 480 V; VGS = 0 V; Tj = 125 ˚C - 80 1000 µA
Gate-source leakage current VGS = ±30 V; VDS = 0 V - 10 200 nA
Total gate charge ID = 8.7 A; V
Gate-source charge - 8 10 nC
= 480 V; VGS = 10 V - 130 150 nC
DD
Gate-drain (Miller) charge - 60 85 nC
Turn-on delay time VDD = 300 V; RD = 33 Ω; - 20 - ns
Turn-on rise time RG = 5.6 Ω -55-ns
Turn-off delay time - 160 - ns
Turn-off fall time - 70 - ns
Internal drain inductance Measured from tab to centre of die - 3.5 - nH
Internal drain inductance Measured from drain lead to centre of die - 4.5 - nH
Internal source inductance Measured from source lead to source - 7.5 - nH
bond pad
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 1500 - pF
Output capacitance - 200 - pF
Feedback capacitance - 112 - pF
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
S
I
SM
V
SD
t
rr
Q
rr
August 1998 2 Rev 1.000
Continuous source current Tmb = 25˚C - - 9.6 A
(body diode)
Pulsed source current (body Tmb = 25˚C - - 38 A
diode)
Diode forward voltage IS = 9.6 A; VGS = 0 V - - 1.2 V
Reverse recovery time IS = 9.6 A; VGS = 0 V; dI/dt = 100 A/µs - 740 - ns
Reverse recovery charge - 9 - µC
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