Philips PHP10N60E Datasheet

Philips Semiconductors Preliminary specification

PowerMOS transistors PHP10N60E
Avalanche energy rated

FEATURES SYMBOL QUICK REFERENCE DATA

• Repetitive Avalanche Rated

• Fast switching V

d

= 600 V

DSS

• Stable off-state characteristics

• High thermal cycling performance I

• Low thermal resistance

g

s

R

DS(ON)

= 9.6 A

D

≤ 0.75 Ω

GENERAL DESCRIPTION PINNING SOT78 (TO220AB)

N-channel, enhancement mode PIN DESCRIPTION
field-effect power transistor,
intendedforuse in off-line switched 1 gate
mode power supplies, T.V. and
computer monitor power supplies, 2 drain
d.c.tod.c.converters,motorcontrol
circuits and general purpose 3 source
switching applications.

case drain
The PHP10N60E is supplied in the
SOT78 (TO220AB) conventional
leaded package.

tab

drain

123

gate source

drain

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DSS

V

DGR

V

GS

I

D

I

DM

P

D

Tj, T

Drain-source voltage Tj = 25 ˚C to 150˚C - 600 V
Drain-gate voltage Tj = 25 ˚C to 150˚C; RGS = 20 kΩ - 600 V
Gate-source voltage - ± 30 V
Continuous drain current Tmb = 25 ˚C; VGS = 10 V - 9.6 A

Tmb = 100 ˚C; VGS = 10 V - 6.1 A
Pulsed drain current Tmb = 25 ˚C - 38 A
Total dissipation Tmb = 25 ˚C - 167 W
Operating junction and - 55 150 ˚C

stg

storage temperature range

AVALANCHE ENERGY LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

E

AS

E

AR

IAS, I

1 pulse width and repetition rate limited by Tj max.

August 1998 1 Rev 1.000

Non-repetitive avalanche Unclamped inductive load, IAS = 9.6 A; - 813 mJ
energy tp = 0.2 ms; Tj prior to avalanche = 25˚C;

VDD ≤ 50 V; RGS = 50 Ω; VGS = 10 V
Repetitive avalanche energy1IAR = 9.6 A; tp = 1 µs; Tj prior to - 28 mJ

avalanche = 25˚C; RGS = 50 Ω; VGS = 10 V
Repetitive and non-repetitive - 9.6 A

AR

avalanche current

Philips Semiconductors Preliminary specification

PowerMOS transistors PHP10N60E
Avalanche energy rated

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R

th j-mb

R

th j-a

ELECTRICAL CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

∆V

(BR)DSS

∆T

j

R

DS(ON)

V

GS(TO)

g

fs

I

DSS

I

GSS

Q

g(tot)

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

d

L

d

L

s

C

iss

C

oss

C

rss

Thermal resistance junction - - 0.75 K/W
to mounting base
Thermal resistance junction - 60 - K/W
to ambient

Drain-source breakdown VGS = 0 V; ID = 0.25 mA 600 - - V
voltage

/ Drain-source breakdown VDS = VGS; ID = 0.25 mA - 0.1 - %/K

voltage temperature
coefficient
Drain-source on resistance VGS = 10 V; ID = 4.4 A - 0.7 0.75 Ω
Gate threshold voltage VDS = VGS; ID = 0.25 mA 2.0 3.0 4.0 V
Forward transconductance VDS = 30 V; ID = 4.4 A 4 5.5 - S
Drain-source leakage current VDS = 600 V; VGS = 0 V - 2 100 µA

VDS = 480 V; VGS = 0 V; Tj = 125 ˚C - 80 1000 µA
Gate-source leakage current VGS = ±30 V; VDS = 0 V - 10 200 nA

Total gate charge ID = 8.7 A; V
Gate-source charge - 8 10 nC

= 480 V; VGS = 10 V - 130 150 nC

DD

Gate-drain (Miller) charge - 60 85 nC
Turn-on delay time VDD = 300 V; RD = 33 Ω; - 20 - ns

Turn-on rise time RG = 5.6 Ω -55-ns
Turn-off delay time - 160 - ns
Turn-off fall time - 70 - ns

Internal drain inductance Measured from tab to centre of die - 3.5 - nH
Internal drain inductance Measured from drain lead to centre of die - 4.5 - nH
Internal source inductance Measured from source lead to source - 7.5 - nH

bond pad
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 1500 - pF

Output capacitance - 200 - pF
Feedback capacitance - 112 - pF

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

S

I

SM

V

SD

t

rr

Q

rr

August 1998 2 Rev 1.000

Continuous source current Tmb = 25˚C - - 9.6 A
(body diode)
Pulsed source current (body Tmb = 25˚C - - 38 A
diode)
Diode forward voltage IS = 9.6 A; VGS = 0 V - - 1.2 V

Reverse recovery time IS = 9.6 A; VGS = 0 V; dI/dt = 100 A/µs - 740 - ns
Reverse recovery charge - 9 - µC

Philips Semiconductors Preliminary specification

PowerMOS transistors PHP10N60E
Avalanche energy rated

MECHANICAL DATA

Dimensions in mm
Net Mass: 2 g

10,3
max

1,3

3,7

4,5
max

3,0 max

not tinned

1,3

max

(2x)

123

2,54 2,54

2,8

3,0

13,5

min

0,9 max (3x)

5,9

min

15,8

max

0,6

2,4

Fig.1. SOT78 (TO220AB); pin 2 connected to mounting base.

Notes

1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.

2. Refer to mounting instructions for SOT78 (TO220) envelopes.

3. Epoxy meets UL94 V0 at 1/8".

August 1998 3 Rev 1.000

Philips Semiconductors Preliminary specification

PowerMOS transistors PHP10N60E
Avalanche energy rated

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 1998

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

August 1998 4 Rev 1.000