Philips PHP109 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

PHP109

P-channel enhancement mode
MOS transistor

Product specification
Supersedes data of 1996 Jun 11
File under Discrete Semiconductors, SC13b

1997 Jun 18

Philips Semiconductors Product specification

P-channel enhancement mode
MOS transistor

FEATURES

• High-speed switching

• No secondary breakdown

• Very low on-resistance.

APPLICATIONS

• Motor and actuator driver

• Power management

• Synchronized rectification.

DESCRIPTION

P-channel enhancement mode MOS transistor in an 8-pin
plastic SO8 (SOT96-1) package.

CAUTION

The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.

PINNING - SO8 (SOT96-1)

PIN SYMBOL DESCRIPTION

1 n.c. not connected
2 s source
3 s source
4 g gate
5 d drain
6 d drain
7 d drain
8 d drain

handbook, halfpage

1

58

4

MAM115

PHP109

dd

d

d

sn.c. gs

Fig.1 Simplified outline and symbol.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

SD

V

GS

V

GSth

I

D

R

DSon

P

tot

drain-source voltage (DC) −−30 V
source-drain diode forward voltage IS= −1.25 A −−1.3 V
gate-source voltage (DC) −±20 V
gate-source threshold voltage ID= −1 mA; VDS=V

GS

−1 −2.8 V
drain current (DC) Ts=80°C −−5A
drain-source on-state resistance ID= −2.5 A; VGS= −10 V − 0.09 Ω
total power dissipation Ts=80°C − 4W

1997 Jun 18 2

Philips Semiconductors Product specification

P-channel enhancement mode

PHP109

MOS transistor

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

GS

I

D

I

DM

P

tot

T

stg

T

j

Source-drain diode

I

S

I

SM

Notes

1. T

s

2. Pulse width and duty cycle limited by maximum junction temperature.

3. Value based on a printed-circuit board with a R

4. Value based on a printed-circuit board with a R

drain-source voltage (DC) −−30 V
gate-source voltage (DC) −±20 V
drain current (DC) Ts=80°C; note 1 −−5A
peak drain current note 2 −−20 A
total power dissipation Ts=80°C − 4W

T

=25°C; note 3 − 2.7 W

amb

T

=25°C; note 4 − 1.15 W

amb

storage temperature −65 +150 °C
operating junction temperature −65 +150 °C

source current (DC) Ts=80°C −−3A
peak pulsed source current note 2 −−12 A

is the temperature at the soldering point of the drain lead.

(ambient to tie-point) of 27.5 K/W.

th a-tp

(ambient to tie-point) of 90 K/W.

th a-tp

10

handbook, halfpage

P

tot

(W)

8

6

4

2

0

0 200

50 100 150

MGD381

Ts (oC)

Fig.2 Power derating curve.

1997 Jun 18 3

2

−10

handbook, halfpage

I

D

(A)

−10

−1

−1

−10

−1

−10

δ = 0.01; TS=80°C.

(1) R

DSon limitation

MGD382

t

p =

(1)

DC

t

P

t

p

T

.

p

δ =

T

t

−1

−10 −10

10 µs

100 µs

1 ms

10 ms

100 ms

2

VDS (V)

Fig.3 SOAR.

Philips Semiconductors Product specification

P-channel enhancement mode

PHP109

MOS transistor

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th j-s

R

10

th j-s

(K/W)

10

10

thermal resistance from junction to soldering point 17.5 K/W

2

δ =

10

1

−1

−2

−6

10

0.75

0.5

0.33

0.2

0.1

0.05

0.02

0.01
P

0

t

p

−5

10

−4

10

−3

10

−2

10

−1

10

MGD392

t

p

δ =

T

t

T

tp (s)

1

Fig.4 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values.

1997 Jun 18 4