Philips PHP1025 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
PHP1025
P-channel enhancement mode
MOS transistor
Objective specification
File under Discrete Semiconductors, SC13b
1998 Feb 18
Philips Semiconductors Objective specification
P-channel enhancement mode
MOS transistor
FEATURES
• Very low R
• High-speed switching
• No secondary breakdown
• Direct interface to C-MOS, TTL, etc.
APPLICATIONS
• Power management
• DC-DC converters
• General purpose switch.
DESCRIPTION
P-channel enhancement mode MOS transistor in an 8-pin
SOT96-1 (SO8) SMD plastic package.
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
at low threshold
DSon
CAUTION
PINNING - SOT96-1 (SO8)
PIN SYMBOL DESCRIPTION
1 s source
2 s source
3 s source
4 g gate
5 d drain
6 d drain
7 d drain
8 d drain
handbook, halfpage
8
1
Top view
5
g
4
MAM398
PHP1025
d
s
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
V
SD
V
GSO
V
GSth
I
D
R
DSon
P
tot
drain-source voltage (DC) −−12 V
source-drain diode forward voltage IS= −1.25 A; VGD=0 −−1.3 V
gate-source voltage (DC) open drain −±8V
gate-source threshold voltage ID= −1 mA; VDS=V
GS
−0.4 − V
drain current (DC) Ts=80°C −−10 A
drain-source on-state resistance ID= −5 A; VGS= −2.5 V − 25 mΩ
total power dissipation Ts=80°C − 4W
1998 Feb 18 2
Philips Semiconductors Objective specification
P-channel enhancement mode
PHP1025
MOS transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
V
GSO
I
D
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
I
SM
Notes
1. T
s
2. Pulse width and duty cycle limited by maximum junction temperature.
3. Device mounted on a printed-circuit board with a R
4. Device mounted on a printed-circuit board with a R
drain-source voltage (DC) −−12 V
gate-source voltage (DC) open drain −±8V
drain current (DC) Ts=80°C; note 1 −−10 A
peak drain current note 2 −−40 A
total power dissipation Ts=80°C − 4W
T
=25°C; note 3 − 2.78 W
amb
T
=25°C; note 4 − 1.16 W
amb
storage temperature −55 +150 °C
operating junction temperature −55 +150 °C
source current (DC) Ts=80°C −−3A
peak pulsed source current note 2 −−12 A
is the temperature at the soldering point of the drain lead.
(ambient to tie-point) of 27.5 K/W.
th a-tp
(ambient to tie-point) of 90 K/W.
th a-tp
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point 17.5 K/W
1998 Feb 18 3
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