Philips PHN603S Datasheet

Philips Semiconductors Product specification

TrenchMOS/ Schottky diode array PHN603S
Three phase brushless d.c. motor driver

FEATURES SYMBOL QUICK REFERENCE DATA

• Schottky diode across each

D4

MOSFET VDS = 25 V

• Low on-state resistance

• Fast switching ID = 5.5 A

• Logic level compatible

• Surface mount package R

G6

D1

G1 G2

S1

G5
D2

S2

G4
D3

G3

S3

≤ 35 mΩ (VGS = 10 V)

DS(ON)

R

≤ 55 mΩ (VGS = 4.5 V)

DS(ON)

GENERAL DESCRIPTION PINNING SOT137-1 (SO24)

Six n-channel, enhancement PIN DESCRIPTION
mode, logic level, field-effect
power transistors and six schottky 1,4 drain 1
diodes configured as three 2 source 1
half-bridges. This device has low 3 gate 1
on-state resistance and fast 5,8 drain 2
switching. The intended 6 source 2
applicationisincomputerdisk and 7 gate 2
tape drives as a three phase 9,12 drain 3
brushless d.c. motor driver. 10 source 3

11 gate 3
The PHN603S is supplied in the 13 gate 4
SOT137-1 (SO24) surface 14-16, 18-20, 22-24 drain 4
mounting package. 17 gate 5

21 gate 6

1

12 13

Top view

24

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

DS

V

DGR

V

GS

I

D

I

DM

P

tot

P

tot

T

, T

stg

j

1 The maximum permissible junction temperature prior to application of continuous drain-source voltage is limited
by thermal runaway.

October 1998 1 Rev 1.000

Repetitive peak drain-source Tj = 25 ˚C to 150˚C - 25 V
voltage
Continuous drain-source voltage Tj ≤ 80 ˚C

1

-25V
Drain-gate voltage RGS = 20 kΩ -25V
Gate-source voltage - ± 20 V
Drain current per device (DC) Ta = 25 ˚C - 5.5 A

Ta = 100 ˚C - 3.5 A
Drain current per device (pulse Ta = 25 ˚C - 22 A
peak value)
Total power dissipation per device Ta = 25 ˚C - 1.67 W

Ta = 100 ˚C - 0.67 W
Total power dissipation all devices Ta = 25 ˚C - 2.78 W
conducting Ta = 100 ˚C - 1.11 W
Storage & operating temperature - 55 150 ˚C

Philips Semiconductors Product specification

TrenchMOS/ Schottky diode array PHN603S

Three phase brushless d.c. motor driver

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

R

th j-a

ELECTRICAL CHARACTERISTICS

Tj= 25˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GS(TO)

R

DS(ON)

I

GSS

I

DSS

Q

g(tot)

Q

gs

Q

gd

t

d on

t

r

t

d off

t

f

C

iss

C

oss

C

rss

Thermal resistance junction to FR4 board, minimum
ambient footprint

Per device 75 - K/W

All devices conducting 42 - K/W

Drain-source breakdown VGS = 0 V; ID = 1 mA 25 - - V
voltage
Gate threshold voltage VDS = VGS; ID = 1 mA 1.0 1.8 - V

Tj = 150˚C 0.4 - - V
Drain-source on-state VGS = 10 V; ID = 5 A - 30 35 mΩ
resistance VGS = 4.5 V; ID = 2.5 A - 50 55 mΩ

VGS = 10 V; ID = 5 A; Tj = 150˚C - 50 60 mΩ
Gate source leakage current VGS = ±20 V; VDS = 0 V - 10 100 nA
Zero gate voltage drain VDS = 25 V; VGS = 0 V; - 0.2 1.0 mA
current Tj = 100˚C - 5 10 mA

Total gate charge ID = 1 A; V

= 20 V; VGS = 10 V - 17 - nC

DD

Gate-source charge - 1.7 - nC
Gate-drain (Miller) charge - 5.2 - nC

Turn-on delay time VDD = 20 V; ID = 1 A; - 8 - ns
Turn-on rise time VGS = 10 V; RG = 6 Ω -11-ns
Turn-off delay time Resistive load - 31 - ns
Turn-off fall time - 17 - ns

Input capacitance VGS = 0 V; VDS = 20 V; f = 1 MHz - 650 - pF
Output capacitance - 320 - pF
Feedback capacitance - 130 - pF

SCHOTTKY DIODE LIMITING VALUES AND CHARACTERISTICS

Tj = 25˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

F

I

FRM

V

F

t

rr

October 1998 2 Rev 1.000

Continuous forward diode Ta = 25 ˚C - - 5.5 A
current
Repetitive peak forward diode - - 22 A
current
Diode forward voltage IF = 2.5 A; VGS = 0 V - 0.4 0.6 V

IF = 2.5 A; VGS = 0 V, Tj = 100 ˚C - 0.3 0.55 V

Reverse recovery time IF = 0.5 A to IR = 0.5 A - 20 - ns

Philips Semiconductors Product specification

TrenchMOS/ Schottky diode array PHN603S
Three phase brushless d.c. motor driver

Normalised Power Dissipation, PD (%)

120

100

80

60

40

20

0

0 25 50 75 100 125 150

Ambient Temperature, Ta (C)

Fig.1. Normalised power dissipation.

PD% = 100⋅PD/P

Normalised Drain Current, ID (%)

120

100

80

60

40

20

0

0 25 50 75 100 125 150

Ambient Temperature, Ta (C)

D 25 ˚C

= f(Ta)

Fig.2. Normalised continuous drain current.

ID% = 100⋅ID/I

= f(Ta); conditions: VGS ≥ 4.5 V

D 25 ˚C

tp

T

MOSFET

D = tp/T

t

Transient Thermal Impedance, Zth j-a (K/W)

100

D = 0.5

10

0.2

0.1

0.05

1

0.02

0.1

0.01
1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01

Single pulse

pulse width, tp (s)

P

D

Fig.4. Transient thermal impedance; MOSFET.

Z

= f(t); parameter D = tp/T

th j-a

Transient Thermal Impedance, Zth j-a (K/W)

100

10

Single pulse

1

0.1

0.01
1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01

pulse width, tp (s)

SCHOTTKY

P

D

tp

t

Fig.5. Transient thermal impedance; Schottky Diode.

Z

= f(t)

th j-a

junctions

Peak Pulsed Drain Current, IDM (A)

100

RDS(on) = VDS/ ID

10

1

0.1

0.01

0.1 1 10 100
Drain-Source Voltage, VDS (V)

d.c.

Fig.3. Safe operating area. Ta = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter t

PHN603S

tp = 100 us

1 ms
10 ms

100 ms

Rth j-b

40K/W

40K/W

MOSFET SCHOTTKY

6 PAIRS

MOSFET SCHOTTKY

40K/W

40K/W

board

Rth b-a

35K/W

ambient

Fig.6. Thermal model; typical values.

R

p

th j-b

and R

th b-a

October 1998 3 Rev 1.000