Philips PHN110 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

PHN110

N-channel enhancement mode
MOS transistor

Product specification
Supersedes data of 1996 Jul 16
File under Discrete Semiconductors, SC13b

1997 Jun 17

Philips Semiconductors Product specification

N-channel enhancement mode
MOS transistor

FEATURES

• High-speed switching

• No secondary breakdown

• Very low on-resistance.

APPLICATIONS

• Motor and actuator driver

• Power management

• Synchronized rectification.

PINNING - SOT96-1 (SO8)

PIN SYMBOL DESCRIPTION

1 n.c not connected
2 s source
3 s source
4 g gate
5 d drain
6 d drain
7 d drain
8 d drain

PHN110

DESCRIPTION

N-channel enhancement mode MOS transistor in an 8-pin
plastic SOT96-1 (SO8) package.

dd

d

handbook, halfpage

58

1

4

MAM116

n.c. gs

Fig.1 Simplified outline and symbol.

CAUTION

The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.

d

s

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

SD

V

GS

V

GSth

I

D

R

DSon

P

tot

drain-source voltage (DC) − 30 V
source-drain diode forward voltage IS= 1.25 A − 1.2 V
gate-source voltage (DC) −±20 V
gate-source threshold voltage ID= 1 mA; VDS=V

1 2.8 V

GS

drain current (DC) Ts=80°C − 4A
drain-source on-state resistance ID= 2.2 A; VGS=10V − 0.1 Ω
total power dissipation Ts=80°C − 2.8 W

1997 Jun 17 2

Philips Semiconductors Product specification

N-channel enhancement mode

PHN110

MOS transistor

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

GS

I

D

I

DM

P

tot

T

stg

T

j

Source-drain diode

I

S

I

SM

Notes

1. T

s

2. Pulse width and duty cycle limited by maximum junction temperature.

3. Value based on a printed-circuit board with a R

4. Value based on a printed-circuit board with a R

drain-source voltage (DC) − 30 V
gate-source voltage (DC) −±20 V
drain current (DC) Ts=80°C; note 1 − 4A
peak drain current note 2 − 16 A
total power dissipation Ts=80°C − 2.8 W

T

=25°C; note 3 − 2.4 W

amb

T

=25°C; note 4 − 1.1 W

amb

storage temperature −65 +150 °C
operating junction temperature −65 +150 °C

source current (DC) Ts=80°C − 3.5 A
peak pulsed source current note 2 − 14 A

is the temperature at the soldering point of the drain lead.

(ambient to tie-point) of 27.5 K/W.

th a-tp

(ambient to tie-point) of 90 K/W.

th a-tp

150

MBG848

Ts (oC)

P
(W)

6

tot

4

2

0

0

handbook, halfpage

50 100 200

Fig.2 Power derating curve.

1997 Jun 17 3

2

10

handbook, halfpage

I

D

(A)

10

1

−1

10

−2

10

−1

10

δ =0.01; TS=80°C.
(1) R

DSon limitation

MBG750

(1)

t

P

t

p

T

.

p

=

δ

T

t

1

DC

10 10

tp =

10 µs
100 µs
1 ms

10 ms
100 ms

VDS (V)

2

Fig.3 SOAR.

Philips Semiconductors Product specification

N-channel enhancement mode

PHN110

MOS transistor

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th j-s

handbook, full pagewidth

R

th j−s

(K/W)

thermal resistance from junction to soldering point 25 K/W

2

10

δ =

0.75

10

1

0.5

0.33

0.2

0.1

0.05

0.02

0.01

P

MBG749

=

δ

t

p

T

0

−1

10

−6

10

−5

10

−4

10

−3

10

−2

10

t

p

T

−1

10

t

1tp (s)

Fig.4 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values.

1997 Jun 17 4