Philips PHN110 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
PHN110
N-channel enhancement mode
MOS transistor
Product specification
Supersedes data of 1996 Jul 16
File under Discrete Semiconductors, SC13b
1997 Jun 17
Philips Semiconductors Product specification
N-channel enhancement mode
MOS transistor
FEATURES
• High-speed switching
• No secondary breakdown
• Very low on-resistance.
APPLICATIONS
• Motor and actuator driver
• Power management
• Synchronized rectification.
PINNING - SOT96-1 (SO8)
PIN SYMBOL DESCRIPTION
1 n.c not connected
2 s source
3 s source
4 g gate
5 d drain
6 d drain
7 d drain
8 d drain
PHN110
DESCRIPTION
N-channel enhancement mode MOS transistor in an 8-pin
plastic SOT96-1 (SO8) package.
dd
d
handbook, halfpage
58
1
4
MAM116
n.c. gs
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
d
s
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
V
SD
V
GS
V
GSth
I
D
R
DSon
P
tot
drain-source voltage (DC) − 30 V
source-drain diode forward voltage IS= 1.25 A − 1.2 V
gate-source voltage (DC) −±20 V
gate-source threshold voltage ID= 1 mA; VDS=V
1 2.8 V
GS
drain current (DC) Ts=80°C − 4A
drain-source on-state resistance ID= 2.2 A; VGS=10V − 0.1 Ω
total power dissipation Ts=80°C − 2.8 W
1997 Jun 17 2
Philips Semiconductors Product specification
N-channel enhancement mode
PHN110
MOS transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
V
GS
I
D
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
I
SM
Notes
1. T
s
2. Pulse width and duty cycle limited by maximum junction temperature.
3. Value based on a printed-circuit board with a R
4. Value based on a printed-circuit board with a R
drain-source voltage (DC) − 30 V
gate-source voltage (DC) −±20 V
drain current (DC) Ts=80°C; note 1 − 4A
peak drain current note 2 − 16 A
total power dissipation Ts=80°C − 2.8 W
T
=25°C; note 3 − 2.4 W
amb
T
=25°C; note 4 − 1.1 W
amb
storage temperature −65 +150 °C
operating junction temperature −65 +150 °C
source current (DC) Ts=80°C − 3.5 A
peak pulsed source current note 2 − 14 A
is the temperature at the soldering point of the drain lead.
(ambient to tie-point) of 27.5 K/W.
th a-tp
(ambient to tie-point) of 90 K/W.
th a-tp
150
MBG848
Ts (oC)
P
(W)
6
tot
4
2
0
0
handbook, halfpage
50 100 200
Fig.2 Power derating curve.
1997 Jun 17 3
2
10
handbook, halfpage
I
D
(A)
10
1
−1
10
−2
10
−1
10
δ =0.01; TS=80°C.
(1) R
DSon limitation
MBG750
(1)
t
P
t
p
T
.
p
=
δ
T
t
1
DC
10 10
tp =
10 µs
100 µs
1 ms
10 ms
100 ms
VDS (V)
2
Fig.3 SOAR.
Philips Semiconductors Product specification
N-channel enhancement mode
PHN110
MOS transistor
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-s
handbook, full pagewidth
R
th j−s
(K/W)
thermal resistance from junction to soldering point 25 K/W
2
10
δ =
0.75
10
1
0.5
0.33
0.2
0.1
0.05
0.02
0.01
P
MBG749
=
δ
t
p
T
0
−1
10
−6
10
−5
10
−4
10
−3
10
−2
10
t
p
T
−1
10
t
1tp (s)
Fig.4 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values.
1997 Jun 17 4
Loading...