Philips PHK4NQ20T User Manual

M3D315

1. Product proﬁle

1.1 Description

1.2 Features

1.3 Applications

PHK4NQ20T

TrenchMOS™ standard level FET

Rev. 01 — 20 January 2003 Product data

N-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™ technology.

Product availability:

PHK4NQ20T in SOT96-1 (SO8).

■ Low on-state resistance

■ Surface mount package.

■ DC-DC primary side switching

■ General purpose switch.

1.4 Quick reference data

■ VDS≤ 200 V ■ ID≤ 4A

■ P

≤ 6.25 W ■ R

tot

DSon

2. Pinning information

Table 1: Pinning - SOT96-1, simpliﬁed outline and symbol

Pin Description Simpliﬁed outline Symbol

1,2,3 source (s) 4 gate (g) 5,6,7,8 drain (d)

8

1

Top view MBK187

SOT96-1

5

4

≤ 130 mΩ

MBB076

d

g

s

Philips Semiconductors

PHK4NQ20T

TrenchMOS™ standard level FET

3. Limiting values

Table 2: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

DGR

V

GS

I

D

I

DM

P

tot

T

stg

T

j

Source-drain diode

I

S

I

SM

drain-source voltage (DC) 25 °C ≤ Tj≤ 150 °C - 200 V drain-gate voltage (DC) 25 °C ≤ Tj≤ 150 °C; RGS=20kΩ - 200 V gate-source voltage (DC) - ±20 V drain current (DC) Tsp=25°C; VGS=10V;Figure 2 and 3 -4A

= 100 °C; VGS=10V;Figure 2 - 2.58 A

T

sp

peak drain current Tsp=25°C; pulsed; tp≤ 10 µs; Figure 3 -16A total power dissipation Tsp=25°C; Figure 1 - 6.25 W storage temperature −55 +150 °C junction temperature −55 +150 °C

source (diode forward) current (DC) Tsp=25°C-4A peak source (diode forward) current Tsp=25°C; pulsed; tp≤ 10 µs - 16 A

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Product data Rev. 01 — 20 January 2003 2 of 12

Philips Semiconductors

%

PHK4NQ20T

TrenchMOS™ standard level FET

120

P

der

(%)

80

40

0

0 50 100 150 200

P

tot

P

der

-----------------------

P

tot 25 C°()

100%×=

03aa17

Tsp (°C)

Fig 1. Normalized total power dissipation as a

function of solder point temperature.

120

I

der

(%)

80

40

0

0 50 100 150 200

03aa25

Tsp (°C)

VGS≥ 10 V

I

der

D

-------------------

I

°

D25C

()

100

×=

Fig 2. Normalized continuous drain current as a

function of solder point temperature.

003aaa234

V

(V)

DS

(A)

2

10

I

D

10

1

-1

10

-2

10

-1

10

Limit R

= VDS/I

DSon

D

DC

1 10 10

tp = 10 µs

1 ms

10 ms

100 ms

1 s

2

Tsp=25°C; IDM is single pulse.

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

10

3

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Philips Semiconductors

10

-2

10

-1

1

10

2

10

-4

10

-3

10

-2

10

-1 1

10

PHK4NQ20T

TrenchMOS™ standard level FET

4. Thermal characteristics

Table 3: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-sp)

R

th(j-a)

thermal resistance from junction to solder point Figure 4 --20K/W thermal resistance from junction to ambient minimum footprint;

- 70 - K/W

mounted on printed-circuit board

4.1 Transient thermal impedance

003aaa235

Z

th(j-sp)

(K/W)

δ = 0.05

0.1

0.05

0.01

0.02

single pulse

Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.

t

tp (s)

δ =

p

T

t

P

t

p

T

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Product data Rev. 01 — 20 January 2003 4 of 12

Philips Semiconductors

PHK4NQ20T

TrenchMOS™ standard level FET

5. Characteristics

Table 4: Characteristics

Tj=25°C unless otherwise speciﬁed

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

V

GS(th)

I

DSS

I

GSS

R

DSon

Dynamic characteristics

Q

g(tot)

Q

gs

Q

gd

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Source-drain diode

V

SD

t

rr

Q

r

drain-source breakdown voltage ID= 250 µA; VGS=0V

=25°C 200 - - V

T

j

= −55 °C 178 - - V

T

j

gate-source threshold voltage ID= 1 mA; VDS=V

=25°C 234V

T

j

= 150 °C 1.2 - - V

T

j

= −55 °C - - 4.5 V

T

j

GS;

Figure 9

drain-source leakage current VDS= 160 V; VGS=0V

=25°C --1µA

T

j

= 150 °C - - 100 µA

T

j

gate-source leakage current VGS= ±10 V; VDS= 0 V - 10 100 nA drain-source on-state resistance VGS= 10 V; ID=4A;Figure 7 and 8

=25°C - 108 130 mΩ

T

j

= 150 °C - 260 312 mΩ

T

j

=5V; ID= 3 A - 110 150 mΩ

V

GS

total gate charge ID= 4 A; VDD= 100 V; VGS=10V;Figure 13 -26-nC gate-source charge - 4 - nC gate-drain (Miller) charge - 8.7 - nC input capacitance VGS=0V; VDS= 25 V; f = 1 MHz; Figure 12 - 1230 - pF output capacitance - 155 - pF reverse transfer capacitance - 48 - pF turn-on delay time VDD= 100 V; ID= 4 A; VGS= 10 V; RG=6Ω -13-ns rise time -10-ns turn-off delay time - 35 - ns fall time -14-ns

source-drain (diode forward) voltage IS= 4 A; VGS=0V;Figure 11 - 0.81 1.2 V reverse recovery time IS= 4 A; dIS/dt = −100 A/µs; VR= 120 V;

=0V

V

recovered charge - 245 - nC

GS

- 104 - ns

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Product data Rev. 01 — 20 January 2003 5 of 12

Philips Semiconductors

4.5 V

3.8 V

PHK4NQ20T

TrenchMOS™ standard level FET

4

10 V

I

D

(A)

3

2

1

0

00.5

1

003aaa236

3.8 V

VGS = 3.6 V

1.5 V

DS

4 V

2

(V)

Tj=25°CT

Fig 5. Output characteristics: drain current as a

Fig 6. Transfer characteristics: drain current as a

function of drain-source voltage; typical values.

003aaa238

R

(mΩ)

400

DSon

300

VGS = 4 V

8

I

D

(A)

6

4

2

0

012345

=25°C and 150 °C; VDS> ID× R

j

Tj = 150 °C

function of gate-source voltage; typical values.

3

a

2

003aaa237

25 °C

VGS (V)

DSon

03al52

200

4.5 V

100

0

02468

5 V

10 V

ID (A)

Tj=25°C

Fig 7. Drain-source on-state resistance as a function

9397 750 10773

of drain current; typical values.

Fig 8. Normalized drain-source on-state resistance

1

0

-60 0 60 120 180

R

DSon

=

a

---------------------------- -

R

DSon 25 C°()

Tj (°C)

factor as a function of junction temperature.

Product data Rev. 01 — 20 January 2003 6 of 12

Philips Semiconductors

PHK4NQ20T

TrenchMOS™ standard level FET

5

V

GS(th)

(V)

4

3

2

1

0

-60 0 60 120 180

ID= 1 mA; VDS=V

GS

max

typ

min

03aa32

Tj (°C)

Fig 9. Gate-source threshold voltage as a function of

junction temperature.

003aaa240

25 °C

(A)

4

I

S

Tj = 150 °C

3

-1

10 I

D

(A)

-2

10

-3

10

-4

10

-5

10

-6

10

0246

03aa35

maxtypmin

VGS (V)

Tj=25°C; VDS=5V

Fig 10. Sub-threshold drain current as a function of

gate-source voltage.

10

C

(pF)

10

4

3

003aaa239

C

iss

2

C

oss

C

rss

VDS (V)

10

2

1

0

0 0.2 0.4 0.6 0.8 1

VSD (V)

10

2

10

-1

1

10

Tj=25°C and 150 °C; VGS=0V VGS= 0 V; f = 1 MHz.

Fig 11. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical values.

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Fig 12. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical values.

Product data Rev. 01 — 20 January 2003 7 of 12

Philips Semiconductors

PHK4NQ20T

TrenchMOS™ standard level FET

10

V

GS

(V)

8

6

4

2

0

0102030

003aaa241

QG (nC)

ID= 4 A; VDD= 100 V

Fig 13. Gate-source voltage as a function of gate charge; typical values.

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Product data Rev. 01 — 20 January 2003 8 of 12

Philips Semiconductors

6. Package outline

PHK4NQ20T

TrenchMOS™ standard level FET

SO8: plastic small outline package; 8 leads; body width 3.9 mm

D

c

y

Z

8

pin 1 index

1

e

5

A

2

A

4

w M

b

p

SOT96-1

E

H

E

1

L

detail X

A

X

v M

A

Q

(A )

L

p

A

3

θ

0 2.5 5 mm

scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

mm

OUTLINE VERSION

SOT96-1

A

max.

1.75

0.069

A1A2A

0.25

1.45

0.10

1.25

0.010

0.057

0.004

0.049

IEC JEDEC EIAJ

076E03 MS-012

0.25

0.01

b

3

p

0.49

0.36

0.019

0.0100

0.014

0.0075

UNIT

inches

Notes

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

cD

0.25

5.0

0.19

4.8

0.20

0.19

REFERENCES

(1)E(2)

4.0

3.8

0.16

0.15

eHELLpQZywv θ

1.27

0.050

6.2

5.8

0.244

0.228

1.05

1.0

0.4

0.039

0.016

0.7

0.6

0.028

0.024

0.25 0.10.25

0.010.010.041 0.004

EUROPEAN

PROJECTION

(1)

0.7

0.3

0.028

0.012

ISSUE DATE

97-05-22 99-12-27

o

8

o

0

Fig 14. SOT96-1 (SO8).

9397 750 10773

Product data Rev. 01 — 20 January 2003 9 of 12

Philips Semiconductors

7. Revision history

Table 5: Revision history

Rev Date CPCN Description

01 20030120 - Product data (9397 750 10773)

PHK4NQ20T

TrenchMOS™ standard level FET

9397 750 10773

Product data Rev. 01 — 20 January 2003 10 of 12

Philips Semiconductors

8. Data sheet status

PHK4NQ20T

TrenchMOS™ standard level FET

Level Data sheet status

I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips

II Preliminary data Qualiﬁcation This datasheet contains data from thepreliminary speciﬁcation. Supplementary datawill be published

III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

[1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

[1]

Product status

9. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation.

[2][3]

Deﬁnition

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

at a later date.PhilipsSemiconductors reserves the right to change the speciﬁcation without notice,in order to improve the design and supply the best possible product.

right to make changes at anytimeinorder to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, andmakes no representationsor warranties thattheseproducts are free frompatent,copyright, or mask workrightinfringement, unless otherwise speciﬁed.

11. Trademarks

10. Disclaimers

TrenchMOS —is a trademark of Koninklijke Philips Electronics N.V

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors

Contact information

For additional information, please visit http://www.semiconductors.philips.com. For sales ofﬁce addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com. Fax: +31 40 27 24825

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Product data Rev. 01 — 20 January 2003 11 of 12

Philips Semiconductors

Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

4 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

4.1 Transient thermal impedance . . . . . . . . . . . . . . 4

5 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

7 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

8 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11

9 Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

10 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

PHK4NQ20T

TrenchMOS™ standard level FET

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Date of release: 20 January 2003 Document order number: 9397 750 10773

Philips PHK4NQ20T User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual

1.1 Description

1.2 Features

1.3 Applications

1.4 Quick reference data

2. Pinning information

3. Limiting values

4. Thermal characteristics

4.1 Transient thermal impedance

5. Characteristics

6. Package outline

SOT96-1

7. Revision history

8. Data sheet status

11. Trademarks

10. Disclaimers