Philips PHK12NQ10T User Manual

M3D315

1. Product profile

1.1 Description

1.2 Features

1.3 Applications

1.4 Quick reference data

PHK12NQ10T

TrenchMOS™ standard level FET

Rev. 01 — 15 September 2003 Product data

N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.

■ Surface mounting package ■ Low on-state resistance.

■ DC-to-DC converter primary side ■ Portable equipment applications.

■ VDS≤ 100 V ■ ID≤ 11.6 A

■ P

≤ 8.9 W ■ R

tot

DSon

2. Pinning information

Table 1: Pinning - SOT96-1 (SO8), simplified outline and symbol

Pin Description Simplified outline Symbol

1,2,3 source (s)
4 gate (g)
5,6,7,8 drain (d)

8

1

Top view MBK187

SOT96-1 (SO8)

5

4

≤ 28 mΩ

MBB076

d

g

s

Philips Semiconductors

PHK12NQ10T

TrenchMOS™ standard level FET

3. Ordering information

Table 2: Ordering information

Type number Package

Name Description Version

PHK12NQ10T SO8 Plastic small outline package; 8 leads. SOT96-1

4. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

DGR

V

GS

I

D

I

DM

P

tot

T

stg

T

j

Source-drain diode

I

S

I

SM

Avalanche ruggedness

E

DS(AL)S

drain-source voltage (DC) 25 °C ≤ Tj≤ 150 °C - 100 V
drain-gate voltage (DC) 25 °C ≤ Tj≤ 150 °C; RGS=20kΩ - 100 V
gate-source voltage (DC) - ±20 V
drain current (DC) Tsp=25°C; VGS=10V;Figure 2 and 3 - 11.6 A

= 100 °C; VGS=10V;Figure 2 - 7.4 A

T

sp

peak drain current Tsp=25°C; pulsed; tp≤ 10 µs; Figure 3 -48A
total power dissipation Tsp=25°C; Figure 1 - 8.9 W
storage temperature −55 +150 °C
junction temperature −55 +150 °C

source (diode forward) current (DC) Tsp=25°C - 12 A
peak source (diode forward) current Tsp=25°C; pulsed; tp≤ 10 µs - 48 A

non-repetitive drain-source
avalanche energy

unclamped inductive load; ID= 11.5 A;

= 0.1 ms; VDD≤ 100 V; VGS=10V;

t

p

starting T

=25°C

j

-65mJ

9397 750 11949

Product data Rev. 01 — 15 September 2003 2 of 12

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

Philips Semiconductors

PHK12NQ10T

TrenchMOS™ standard level FET

120

P

der

(%)

80

40

0

0 50 100 150 200

P

tot

P

der

-----------------------

P

tot 25 C°()

100%×= I

03aa17

Tsp (°C)

Fig 1. Normalized total power dissipation as a

function of solder point temperature.

2

10

I

D

(A)
10

Limit R

DSon

= V

DS

/ I

D

120

I

der

(%)

80

40

0

0 50 100 150 200

I

D

der

-------------------

I

D25C

()

100%×=

°

03aa25

Tsp (°C)

Fig 2. Normalized continuous drain current as a

function of solder point temperature.

003aaa509

tp = 10 µs

100 µs

1 ms

1

10

10

DC

-1

-2

-1

10

1 10 10

10 ms

100 ms

2

VDS (V)

10

3

Tsp=25°C; IDM is single pulse

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

9397 750 11949

Product data Rev. 01 — 15 September 2003 3 of 12

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

Philips Semiconductors

PHK12NQ10T

TrenchMOS™ standard level FET

5. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-sp)

thermal resistance from junction to solder point Figure 4 --15K/W

5.1 Transient thermal impedance

2

10

Z

th(j-sp)

(K/W)

10

1

10

-1

single pulse

-5

10

δ =

0.5

0.2

0.1

0.05

0.02

P

t

p

T

-4

10

-3

10

-2

10

-1

10

1 10

tp (s)

Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.

003aaa510

t

p

δ =

T

t

9397 750 11949

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

Product data Rev. 01 — 15 September 2003 4 of 12