Philips PHE13005 Datasheet
Philips Semiconductors Product specification
Silicon Diffused Power Transistor PHE13005
GENERAL DESCRIPTION
The PHE13005 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high
frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,
etc.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
V
CEsat
t
f
PINNING - TO220AB PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0V - 700 V
Collector-Base voltage (open emitter) - 700 V
Collector-emitter voltage (open base) - 400 V
Emitter-Base voltage (IB = 0) - 9 V
Collector current (DC) - 4 A
Collector current peak value - 8 A
Total power dissipation Tmb ≤ 25˚C - 75 W
Collector-emitter saturation voltage IC = 2A; IB = 0.5A 0.2 0.6 V
Fall time IC = 2A; IB1 = 0.4A; V
= 5V 0.1 0.5 µs
BE(OFF)
PIN DESCRIPTION
tab
c
1 base
2 collector
b
3 emitter
tab collector
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
V
I
C
I
CM
I
B
I
BM
P
T
T
CESM
CEO
CBO
EBO
tot
stg
j
Collector to emitter voltage VBE = 0V - 700 V
Collector to emitter voltage (open base) - 400 V
Collector to base voltage (open emitter) - 700 V
Emitter-Base voltage (IB = 0) - 9 V
Collector current (DC) - 4 A
Collector current peak value - 8 A
Base current (DC) - 2 A
Base current peak value - 4 A
Total power dissipation Tmb ≤ 25˚C - 75 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C
THERMAL RESISTANCES8
e
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
R
th j-mb
th j-a
Junction to mounting base - 1.67 K/W
Junction to ambient in free air 60 - K/W
February 1999 1 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor PHE13005
STATIC CHARACTERISTICS
Tmb = 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CEV
I
CEV
I
EBO
V
CEOsust
V
CEsat
V
CEsat
V
CEsat
V
BEsat
V
BEsat
h
FE
h
FEsat
Collector cut-off current
Emitter cut-off current VEB = 9V; IC = 0A - - 1 mA
Collector-emitter sustaining voltage IB = 0A; IC = 10mA 400 - - V
Collector-emitter saturation voltage IC = 1.0A; IB = 0.2A - 0.1 0.5 V
Base-emitter saturation voltage IC = 1.0A; IB = 0.2A - 0.85 1.2 V
DC current gain IC = 1.0A; VCE = 5V 10 20 60
DYNAMIC CHARACTERISTICS
Tmb = 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times (resistive load) I
t
s
t
f
t
s
t
f
t
s
t
f
Turn-off storage time 2.7 4 µs
Turn-off fall time 0.3 0.9 µs
Switching times (inductive load) I
Turn-off storage time 1.2 2 µs
Turn-off fall time 0.1 0.5 µs
Switching times (inductive load) I
Turn-off storage time 1.4 4 µs
Turn-off fall time 0.16 0.9 µs
1
V
= -1.5V; VCE = V
BE(off)
V
= -1.5V; VCE = V
BE(off)
Tj = 100˚C
CESMmax
CESMmax
- - 1.0 mA
; - - 5.0 mA
IC = 2.0A; IB = 0.5A - 0.2 0.6 V
IC = 4.0A; IB = 1.0A - 0.3 1.0 V
IC = 2.0A; IB = 0.5A - 0.92 1.6 V
IC = 2.0A; VCE = 5V 8 17 40
= 2.0A; I
Con
RL = 75Ω; V
= 2.0A; I
Con
-V
= 5V
BE(off)
= 2.0A; I
Con
-V
= 5V; Tj = 100˚C
BE(off)
= -I
Bon
CC
Bon
Bon
= 0.4A;
Boff
= 250V
= 0.4A; LB = 1µH;
= 0.4A; LB = 1µH;
1 Measured with half sine-wave voltage (curve tracer).
February 1999 2 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor PHE13005
30-60 Hz
6V
Fig.1. Test circuit for V
IC / mA
250
100
10
0
Fig.2. Oscilloscope display for V
300R
VCE / V
100-200R
Horizontal
Oscilloscope
Vertical
1R
.
CEOsust
min
VCEOsust
CEOsust
+ 50v
.
LC
ts
toff
ICon
tf
IBon
VCC
Fig.
IC
IB
4.
Switching times waveforms with resistive load.
IBon
-VBB
Fig.
90 %
ton
10 %
tr
30ns
-IBoff
LB
5.
Test circuit inductive load.
VCC = 300 V; -VBE = 5 V, LC = 200 uH; LB = 1 uH
90 %
10 %
T.U.T.
tf
ICon
90 %
10 %
t
t
-IBoff
Fig
VIM
0
tp
T
.3.
Test circuit resistive load. VIM = -6 to +8 V
R
B
VCC
R
L
T.U.T.
IC
ts
toff
IB
Fig.
6.
Switching times waveforms with inductive load.
IBon
VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01.
RB and RL calculated from I
Con
and I
requirements.
Bon
February 1999 3 Rev 1.000
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