Philips PHE13003AU Datasheet

Philips Semiconductors Product specification

Silicon Diffused Power Transistor PHE13003AU

GENERAL DESCRIPTION

High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

CESM

V

CBO

V

CEO

I

C

I

CM

P

tot

V

CEsat

h

FE

t

fi

PINNING - SOT533 PIN CONFIGURATION SYMBOL

Collector-emitter voltage peak value VBE = 0 V - 700 V Collector-Base voltage (open emitter) - 700 V Collector-emitter voltage (open base) - 400 V Collector current (DC) - 1.5 A Collector current peak value - 3 A Total power dissipation Tmb ≤ 25 ˚C - 50 W Collector-emitter saturation voltage IC = 1.0 A;IB = 0.25 A - 1.0 V

IC = 1.0 A; VCE = 5 V - 25

Fall time (Inductive) IC = 1.0 A; I

= 0.2 A - 150 ns

BON

PIN DESCRIPTION

c

1 base 2 collector

b

3 emitter

1

tab collector

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V V V I

C

I

CM

I

B

I

BM

P T T

CESM CEO CBO

tot stg j

Collector to emitter voltage VBE = 0 V - 700 V Collector to emitter voltage (open base) - 400 V Collector to base voltage (open emitter) - 700 V Collector current (DC) - 1.5 A Collector current peak value - 3 A Base current (DC) - 0.75 A Base current peak value - 1.5 A Total power dissipation Tmb ≤ 25 ˚C - 50 W Storage temperature -65 150 ˚C Junction temperature - 150 ˚C

THERMAL RESISTANCES

Top view

23

MBK915

e

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

R R

th j-mb

th j-a

Junction to mounting base - 2.5 K/W Junction to ambient in free air 70 - K/W

September 1999 1 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor PHE13003AU

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CES,ICBO

I

CES

I

CEO

I

EBO

V

CEOsust

V

CEsat

V

BEsat

h

FE

h

FE

Collector cut-off current

Collector cut-off current Emitter cut-off current VEB = 9 V; IC = 0 A - - 1 mA Collector-emitter sustaining voltage IB = 0 A; IC = 10 mA; 400 - - V

Collector-emitter saturation voltage IC = 1.0 A;IB = 0.25 A - - 1.0 V Base-emitter saturation voltage IC = 1.0 A;IB = 0.25 A - - 1.2 V DC current gain IC = 100mA; VCE = 5 V 8 - 40

DYNAMIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

Switching times (resistive load) I

t

on

t

s

t

f

t

s

t

f

t

s

t

f

Turn-on time - 0.9 µs Turn-off storage time - 4.0 µs Turn-off fall time - 0.7 µs

Switching times (inductive load) I Turn-off storage time - 2 µs

Turn-off fall time - 100 ns Switching times (inductive load) I

Turn-off storage time - 4 µs Turn-off fall time - 150 ns

1

VBE = 0 V; VCE = V VBE = 0 V; VCE = V Tj = 125 ˚C

V

CEO

= V

(400V) - - 0.1 mA

CEOMmax

CESMmax

; - - 5.0 mA

CESMmax

- - 1.0 mA

L = 25 mH

IC = 1.0 A; VCE = 5 V 5 - 25

= 1.0 A; I

Con

RL = 75 ohms; V

= 1.0 A; I

Con

= -I

Bon

= 0.2 A;

Boff

= 4V;

BB2

= 0.2 A; LB = 1 µH;

-VBB = 5 V

= 1.0 A; I

Con

= 0.2 A; LB = 1 µH;

Bon

-VBB = 5 V; Tj = 100 ˚C

1 Measured with half sine-wave voltage (curve tracer).

September 1999 2 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor PHE13003AU

30-60 Hz

IC / mA

250

100

6V

300R

Fig.1. Test circuit for V

100-200R

Horizontal

Oscilloscope

Vertical

1R

.

CEOsust

+ 50v

!

Zth j-mb / (K/W)

10

D=

0.5

1

0.2

0.1

0.05

0.1

0.01

0.02

0

10us 1ms 0.1s 10ms

t / s

t

p

P

D

T

Fig.4. Transient thermal impedance.

Zth

HFE

30

125 C

20

15

10

25 C

5

= f(t); parameter D = tp/T

j-lead

-40 C

VCE = 1V

D =

p

t T

t

10

0

VCE / V

VCEOsust

Fig.2. Oscilloscope display for V

PD%

120 110 100

90 80 70 60 50 40 30 20 10

0

0 20 40 60 80 100 120 140

Normalised Power Derating

Tmb / C

Fig.3. Normalised power dissipation.

PD% = 100⋅PD/PD

= f (Tmb)

25˚C

min

CEOsust

1

.

0.001 0.01 0.1 1 2 3 5 IC/A

Fig.5. Typical DC current gain. hFE = f(IC)

parameter V

HFE

30

10

0.001 0.01 0.1 1 2 3 5

25 C

VCE = 5V

1

CE

125 C

-40 C

IC/A

Fig.6. Typical DC current gain. hFE = f(IC)

parameter V

CE

September 1999 3 Rev 1.000