Philips PHE13003AU Datasheet
Philips Semiconductors Product specification
Silicon Diffused Power Transistor PHE13003AU
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for
use in high frequency electronic lighting ballast applications, converters and inverters, etc.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CBO
V
CEO
I
C
I
CM
P
tot
V
CEsat
h
FE
t
fi
PINNING - SOT533 PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 V - 700 V
Collector-Base voltage (open emitter) - 700 V
Collector-emitter voltage (open base) - 400 V
Collector current (DC) - 1.5 A
Collector current peak value - 3 A
Total power dissipation Tmb ≤ 25 ˚C - 50 W
Collector-emitter saturation voltage IC = 1.0 A;IB = 0.25 A - 1.0 V
IC = 1.0 A; VCE = 5 V - 25
Fall time (Inductive) IC = 1.0 A; I
= 0.2 A - 150 ns
BON
PIN DESCRIPTION
c
1 base
2 collector
b
3 emitter
1
tab collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
C
I
CM
I
B
I
BM
P
T
T
CESM
CEO
CBO
tot
stg
j
Collector to emitter voltage VBE = 0 V - 700 V
Collector to emitter voltage (open base) - 400 V
Collector to base voltage (open emitter) - 700 V
Collector current (DC) - 1.5 A
Collector current peak value - 3 A
Base current (DC) - 0.75 A
Base current peak value - 1.5 A
Total power dissipation Tmb ≤ 25 ˚C - 50 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C
THERMAL RESISTANCES
Top view
23
MBK915
e
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
R
th j-mb
th j-a
Junction to mounting base - 2.5 K/W
Junction to ambient in free air 70 - K/W
September 1999 1 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor PHE13003AU
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES,ICBO
I
CES
I
CEO
I
EBO
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
Collector cut-off current
Collector cut-off current
Emitter cut-off current VEB = 9 V; IC = 0 A - - 1 mA
Collector-emitter sustaining voltage IB = 0 A; IC = 10 mA; 400 - - V
Collector-emitter saturation voltage IC = 1.0 A;IB = 0.25 A - - 1.0 V
Base-emitter saturation voltage IC = 1.0 A;IB = 0.25 A - - 1.2 V
DC current gain IC = 100mA; VCE = 5 V 8 - 40
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times (resistive load) I
t
on
t
s
t
f
t
s
t
f
t
s
t
f
Turn-on time - 0.9 µs
Turn-off storage time - 4.0 µs
Turn-off fall time - 0.7 µs
Switching times (inductive load) I
Turn-off storage time - 2 µs
Turn-off fall time - 100 ns
Switching times (inductive load) I
Turn-off storage time - 4 µs
Turn-off fall time - 150 ns
1
1
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
V
CEO
= V
(400V) - - 0.1 mA
CEOMmax
CESMmax
; - - 5.0 mA
CESMmax
- - 1.0 mA
L = 25 mH
IC = 1.0 A; VCE = 5 V 5 - 25
= 1.0 A; I
Con
RL = 75 ohms; V
= 1.0 A; I
Con
= -I
Bon
Bon
= 0.2 A;
Boff
= 4V;
BB2
= 0.2 A; LB = 1 µH;
-VBB = 5 V
= 1.0 A; I
Con
= 0.2 A; LB = 1 µH;
Bon
-VBB = 5 V; Tj = 100 ˚C
1 Measured with half sine-wave voltage (curve tracer).
September 1999 2 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor PHE13003AU
30-60 Hz
IC / mA
250
100
6V
300R
Fig.1. Test circuit for V
100-200R
Horizontal
Oscilloscope
Vertical
1R
.
CEOsust
+ 50v
!
Zth j-mb / (K/W)
10
D=
0.5
1
0.2
0.1
0.05
0.1
0.01
0.02
0
10us 1ms 0.1s 10ms
t / s
t
p
P
D
T
Fig.4. Transient thermal impedance.
Zth
HFE
30
125 C
20
15
10
25 C
5
= f(t); parameter D = tp/T
j-lead
-40 C
VCE = 1V
D =
p
t
T
t
10
0
VCE / V
VCEOsust
Fig.2. Oscilloscope display for V
PD%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Normalised Power Derating
Tmb / C
Fig.3. Normalised power dissipation.
PD% = 100⋅PD/PD
= f (Tmb)
25˚C
min
CEOsust
1
.
0.001 0.01 0.1 1 2 3 5
IC/A
Fig.5. Typical DC current gain. hFE = f(IC)
parameter V
HFE
30
10
0.001 0.01 0.1 1 2 3 5
25 C
VCE = 5V
1
CE
125 C
-40 C
IC/A
Fig.6. Typical DC current gain. hFE = f(IC)
parameter V
CE
September 1999 3 Rev 1.000
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