Philips PHD95N03LT Datasheet
M3D300
1. Description
2. Features
PHD95N03LT
N-channel enhancement mode field-effect transistor
Rev. 01 — 18 July 2001 Product data
N-channel logic level field-effect power transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
PHD95N03LT in SOT428 (D-PAK).
■ Low on-state resistance
■ Fast switching.
3. Applications
■ High frequency computer motherboard DC to DC converters
4. Pinning information
c
Table 1: Pinning - SOT428, simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
2 drain (d)
3 source (s)
mb mounting base,
[1] It is not possible to make connection to pin 2 of the SOT428 package.
c
connected to drain (d)
[1]
mb
2
13
Top view
MBK091
SOT428 (D-Pak)
g
MBB076
d
s
1. TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors
PHD95N03LT
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
V
I
P
T
R
DS
D
tot
j
DSon
drain-source voltage (DC) Tj=25to175°C − 25 V
drain current (DC) Tmb=25°C; VGS=5V − 75 A
total power dissipation Tmb=25°C − 115 W
junction temperature − 175 °C
drain-source on-state resistance VGS= 10 V; ID=25A 5 7 mΩ
=5V; ID=25A 7.5 9 mΩ
V
GS
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
V
DGR
V
GS
V
GSM
I
D
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
I
SM
Avalanche ruggedness
E
AS
I
AS
drain-source voltage (DC) Tj=25to175°C − 25 V
drain-gate voltage (DC) Tj=25to175°C; RGS=20kΩ−25 V
gate-source voltage (DC) −±15 V
gate-source voltage tp≤ 50 µs; pulsed;
duty cycle 25 %; T
≤ 150 °C
j
−±20 V
drain current (DC) Tmb=25°C; VGS=5V;Figure 2 and 3 − 75 A
= 100 °C; VGS=5V;Figure 2 − 61 A
T
mb
peak drain current Tmb=25°C; pulsed; tp≤ 10 µs; Figure 3 − 240 A
total power dissipation Tmb=25°C; Figure 1 − 115 W
storage temperature −55 +175 °C
operating junction temperature −55 +175 °C
source (diode forward) current (DC) Tmb=25°C − 75 A
peak source (diode forward) current Tmb=25°C; pulsed; tp≤ 10 µs − 240 A
non-repetitive avalanche energy unclamped inductive load;
=75A;tp= 0.1 ms; VDD=15V;
I
D
=50Ω; VGS= 5V; starting Tj=25°C;
R
GS
non-repetitive avalanche current unclamped inductive load;
=15V;RGS=50Ω; VGS=5V;
V
DD
starting T
=25°C
j
− 120 mJ
− 75 A
9397 750 08216
Product data Rev. 01 — 18 July 2001 2 of 13
© Philips Electronics N.V. 2001. All rights reserved.
Philips Semiconductors
PHD95N03LT
N-channel enhancement mode field-effect transistor
150
Tmb (oC)
03aa16
200
120
P
der
(%)
100
80
60
40
20
0
0 50 100
P
P
der
tot
----------------------
P
tot 25 C°()
100%×= I
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
3
10
120
I
der
(%)
100
80
60
40
20
0
0 50 100 150 200
I
D
der
------------------ -
I
D25C°()
100%×=
03ae86
T
(ºC)
mb
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
03ae87
I
D
(A)
2
10
10
1
1 10 10
R
= V
/ I
δ =
DS
D
t
p
T
t
D.C.
tp = 10 µs
100 µs
1 ms
10 ms
100 ms
(V)
V
DS
2
DSon
P
t
p
T
Tmb=25°C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 08216
© Philips Electronics N.V. 2001. All rights reserved.
Product data Rev. 01 — 18 July 2001 3 of 13
Philips Semiconductors
PHD95N03LT
N-channel enhancement mode field-effect transistor
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter Conditions Value Unit
R
th(j-mb)
R
th(j-a)
thermal resistance from junction to mounting
base
thermal resistance from junction to ambient mounted on a printed circuit board;
7.1 Transient thermal impedance
Figure 4 1.3 K/W
50 K/W
minimum footprint
03ae85
t
p
δ =
T
t
(s)
t
p
Z
th(j-mb)
(K/W)
10
1
10
10
10
δ = 0.5
0.2
0.1
-1
0.05
0.02
-2
-3
10
single pulse
-5
10 10
-3
10
-2
10
-1
P
t
p
T
1 10
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 08216
© Philips Electronics N.V. 2001. All rights reserved.
Product data Rev. 01 — 18 July 2001 4 of 13
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