Philips PHB78NQ03LT, PHD78NQ03LT, PHP78NQ03LT Datasheet

1. Product proﬁle

1.1 Description

1.2 Features

PHP/PHB/PHD78NQ03LT

N-channel enhancement mode ﬁeld-effect transistor

Rev. 01 — 14 November 2001 Product data

N-channel logic level ﬁeld-effect power transistor in a plastic package using TrenchMOS™ technology.

Product availability:

PHP78NQ03LT in SOT78 (TO-220AB) PHB78NQ03LT in SOT404 (D2-PAK) PHD78NQ03LT in SOT428 (D-PAK).

■ Low on-state resistance ■ Fast switching

1.3 Applications

■ Computer motherboards ■ DC to DC converters

1.4 Quick reference data

■ VDS = 25 V ■ ID = 75 A (T

■ P

= 93 W (T

tot

=25°C) ■ R

mb

= 9 mΩ (T

DSon

mb

=25°C)

j

2. Pinning information

Table 1: Pinning - SOT78, SOT404, SOT428 simpliﬁed outlines and symbol

Pin Description Simpliﬁed outline Symbol

1 gate (g) 2 drain (d) 3 source (s) mb mounting base,

connected to drain (d)

[1]

MBK106

12mb3

SOT78 (TO-220AB) SOT404 (D

mb

2

13

2

-PAK)

MBK116

mb

2

13

Top view

MBK091

SOT428 (D-PAK)

MBB076

d

g

s

[1] It is not possible to make connection to pin 2 of the SOT404 or SOT428 packages.

Philips Semiconductors

PHP/PHB/PHD78NQ03LT

N-channel enhancement mode ﬁeld-effect transistor

3. Limiting values

Table 2: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

DGR

V

GS

V

GSM

I

D

I

DM

P

tot

T

stg

T

j

Source-drain diode

I

S

I

SM

drain-source voltage (DC) Tj=25to175°C - 25 V drain-gate voltage (DC) Tj=25to175°C; RGS=20kΩ -25V gate-source voltage (DC) - ±15 V gate-source voltage tp≤ 50 µs; pulsed;

duty cycle 25 %; T

≤ 150 °C

j

- ±20 V

drain current (DC) Tmb=25°C; VGS=5V;Figure 2 and 3 -61A

= 100 °C; VGS=5V;Figure 2 -43A

T

mb

=25°C; VGS=10V - 75 A

T

mb

= 100 °C; VGS=10V - 53 A

T

mb

peak drain current Tmb=25°C; pulsed; tp≤ 10 µs; Figure 3 - 228 A total power dissipation Tmb=25°C; Figure 1 -93W storage temperature −55 +175 °C operating junction temperature −55 +175 °C

source (diode forward) current (DC) Tmb=25°C - 75 A peak source (diode forward) current Tmb=25°C; pulsed; tp≤ 10 µs - 228 A

9397 750 08916

Product data Rev. 01 — 14 November 2001 2 of 14

Philips Semiconductors

PHP/PHB/PHD78NQ03LT

N-channel enhancement mode ﬁeld-effect transistor

120

P

der

(%)

80

40

0

0 50 100 150 200

P

tot

P

der

-----------------------

P

tot 25 C°()

100%×= I

03aa16

(oC)

T

mb

Fig 1. Normalized total power dissipation as a

function of mounting base temperature.

120

I

der

(%)

80

40

0

0 50 100 150 200

I

D

der

-------------------

I

D25C

()

100%×=

°

03aa24

(oC)

T

mb

Fig 2. Normalized continuous drain current as a

function of mounting base temperature.

3

10

I

D

(A)

2

10

1

1 10 10

R

DSon

= VDS / I

D

DC

tp = 10 µs

100 µs

1 ms

10 ms

100 ms

03aaa175

VDS (V)

Tmb=25°C; IDM is single pulse.

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

2

9397 750 08916

Product data Rev. 01 — 14 November 2001 3 of 14

Philips Semiconductors

PHP/PHB/PHD78NQ03LT

N-channel enhancement mode ﬁeld-effect transistor

4. Thermal characteristics

Table 3: Thermal characteristics

Symbol Parameter Conditions Value Unit

R

th(j-mb)

R

th(j-a)

thermal resistance from junction to mounting base

thermal resistance from junction to ambient vertical in still air; SOT78 package 60 K/W

4.1 Transient thermal impedance

Figure 4 1.6 K/W

mounted on a printed circuit board; minimum

50 K/W

footprint; SOT404 and SOT428 packages

10

Z

th(j-mb)

(K/W)

1

δ = 0.5

0.2

0.1

-1

10

0.05

0.02

single pulse

-2 10

-5

10

-4

10

-3

10

-2

10

-1

P

1 10

δ =

t

p

T

(s)

t

p

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.

03ag18

t

p

T

t

9397 750 08916

Product data Rev. 01 — 14 November 2001 4 of 14

Philips Semiconductors

PHP/PHB/PHD78NQ03LT

N-channel enhancement mode ﬁeld-effect transistor

5. Characteristics

Table 4: Characteristics

Tj=25°C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

V

GS(th)

I

DSS

I

GSS

R

DSon

Dynamic characteristics

g

fs

Q

g(tot)

Q

gs

Q

gd

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Source-drain diode

V

SD

t

rr

Q

rr

drain-source breakdown voltage ID= 0.25 mA; VGS=0V

=25°C 25--V

T

j

= −55 °C 22--V

T

j

gate-source threshold voltage ID= 1 mA; VDS=VGS; Figure 9

=25°C 1 1.5 2 V

T

j

= 175 °C 0.5 - - V

T

j

= −55 °C - - 2.3 V

T

j

drain-source leakage current VDS=25V; VGS=0V

=25°C - 0.05 10 µA

T

j

= 175 °C - - 500 µA

T

j

gate-source leakage current VGS= ±15 V; VDS= 0 V - 10 100 nA drain-source on-state resistance VGS=5V; ID=25A;Figure 7 and 8

=25°C - 11.5 13.5 mΩ

T

j

= 175 °C - 20.7 24.3 mΩ

T

j

= 10 V; ID=25A;

V

GS

=25°C - 7.65 9 mΩ

T

j

forward transconductance VDS=25V; ID=50A - 34 - S total gate charge ID= 50 A; VDD=15V; VGS=5V;Figure 13 -13-nC gate-source charge - 4.8 - nC gate-drain (Miller) charge - 4.2 5.6 nC input capacitance VGS=0V; VDS= 25 V; f = 1 MHz; Figure 11 - 1074 - pF output capacitance - 389 - pF reverse transfer capacitance - 156 - pF turn-on delay time VDD=15V; ID= 25 A; VGS=10V;

= 5.6 Ω; resistive load

R

turn-on rise time - 92 130 ns

G

- 2033ns

turn-off delay time - 30 48 ns turn-off fall time - 4060ns

source-drain (diode forward) voltage IS= 25 A; VGS=0V;Figure 12 - 0.95 1.2 V reverse recovery time IS= 20 A; dIS/dt = −100 A/µs; VDS=25V - 40 - ns recovered charge - 32 - nC

9397 750 08916

Product data Rev. 01 — 14 November 2001 5 of 14