Philips PHB66NQ03LT, PHD66NQ03LT, PHP66NQ03LT Datasheet

1. Description

2. Features

PHP/PHB/PHD66NQ03LT
N-channel TrenchMOS transistor
Rev. 02 — 10 December 2001 Product data
N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology.
PHP66NQ03LT in SOT78 (TO-220AB) PHB66NQ03LT in SOT404 (D2-PAK) PHD66NQ03LT in SOT428 (D-PAK).
Low on-state resistance
Fast switching.

3. Applications

High frequency computer motherboard DC to DC converters.

4. Pinning information

Table 1: Pinning - SOT78, SOT404, SOT428 simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g) 2 drain (d)
[1]
3 source (s) mb mounting base,
connected to drain (d)
MBK106
12mb3
SOT78 (TO-220AB) SOT404 (D
[1] It is not possible to make connection to pin 2 of the SOT404 and SOT428 packages.
mb
2
13
MBK116
2
-PAK) SOT428 (D-PAK)
mb
2
13
Top view
MBK091
MBB076
d
g
s
1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
Philips Semiconductors
PHP/PHB/PHD66NQ03LT
N-channel TrenchMOS transistor

5. Quick reference data

Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
V I
D
P T R
DS
tot j DSon
drain-source voltage (DC) 25 °C Tj≤ 175 °C - 25 V drain current (DC) Tmb=25°C; VGS=10V - 66 A
=25°C; VGS=5V - 57 A
T
mb
total power dissipation Tmb=25°C - 93 W junction temperature - 175 °C drain-source on-state resistance VGS= 10 V; ID= 25 A; Tj = 25 °C 9.1 12 m
=5V; ID= 25 A; Tj = 25 °C 12.3 16 m
V
GS

6. Limiting values

Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
V
DGR
V
GS
V
GSM
I
D
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
I
SM
drain-source voltage (DC) 25 °C Tj≤ 175 °C - 25 V drain-gate voltage (DC) 25 °C Tj≤ 175 °C; RGS=20k -25V gate-source voltage (DC) - ±15 V peak gate-source voltage tp≤ 50 µs; pulsed;
duty cycle 25%; T
150 °C
j
- ±20 V
drain current (DC) Tmb=25°C; VGS=5V;Figure 2 and 3 -57A
= 100 °C; VGS=5V;Figure 2 -40A
T
mb
=25°C; VGS=10V - 66 A
T
mb
= 100 °C; VGS=10V - 45 A
T
mb
peak drain current Tmb=25°C; pulsed; tp≤ 10 µs; Figure 3 - 228 A total power dissipation Tmb=25°C; Figure 1 -93W storage temperature 55 +175 °C operating junction temperature 55 +175 °C
source (diode forward) current (DC) Tmb=25°C - 57 A peak source (diode forward) current Tmb=25°C; pulsed; tp≤ 10 µs - 228 A
9397 750 09119
Product data Rev. 02 — 10 December 2001 2 of 14
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Philips Semiconductors
PHP/PHB/PHD66NQ03LT
N-channel TrenchMOS transistor
120
P
der
(%)
80
40
0
0 50 100 150 200
P
tot
P
der
-----------------------
P
tot 25 C°()
100%×= I
03aa16
T
(oC)
mb
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
3
10
120
I
der
(%)
80
40
0
0 50 100 150 200
I
D
der
-------------------
I
D25C
()
100%×=
°
03aa24
T
(oC)
mb
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
03ag19
I
D
(A)
2
10
10
1
1 10 10
R
DSon
= V
DS
/ I
D
DC
tp = 10 µs
100 µs
1 ms
10 ms 100 ms
(V)
V
DS
2
Tmb=25°C; IDM is single pulse; VGS=5V.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 09119
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data Rev. 02 — 10 December 2001 3 of 14
Philips Semiconductors
PHP/PHB/PHD66NQ03LT
N-channel TrenchMOS transistor

7. Thermal characteristics

Table 4: Thermal characteristics
Symbol Parameter Conditions Value Unit
R
th(j-mb)
R
th(j-a)
thermal resistance from junction to mounting base
thermal resistance from junction to ambient vertical in still air; SOT78 package 60 K/W

7.1 Transient thermal impedance

Figure 4 1.6 K/W
mounted on a printed circuit board; minimum
50 K/W
footprint; SOT404 and SOT428 packages
03ag18
t
p
δ =
T
t
p
t
T
(s)
t
p
Z
th(j-mb)
(K/W)
10
1
10
10
δ = 0.5
0.2
0.1
-1
0.05
0.02
single pulse
-2 10
-5
10
-4
10
-3
10
-2
10
-1
P
1 10
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 09119
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data Rev. 02 — 10 December 2001 4 of 14
Philips Semiconductors
PHP/PHB/PHD66NQ03LT
N-channel TrenchMOS transistor

8. Characteristics

Table 5: Characteristics
Tj=25°C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DSon
Dynamic characteristics
g
fs
Q
g(tot)
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Source-drain diode
V
SD
t
rr
Q
r
drain-source breakdown voltage ID= 0.25 mA; VGS=0V
=25°C 25--V
T
j
= 55 °C 22--V
T
j
gate-source threshold voltage ID= 1 mA; VDS=VGS; Figure 9
=25°C 1 1.5 2 V
T
j
= 175 °C 0.5 - - V
T
j
= 55 °C - - 2.3 V
T
j
drain-source leakage current VDS=25V; VGS=0V
=25°C - 0.05 10 µA
T
j
= 175 °C - - 500 µA
T
j
gate-source leakage current VGS= ±5 V; VDS= 0 V - 10 100 nA drain-source on-state resistance VGS=5V; ID=25A;Figure 7 and 8
=25°C - 12.3 16 mΩ
T
j
= 175 °C - 22.1 28.8 m
T
j
=10V; ID=25A
V
GS
=25°C - 9.1 12 mΩ
T
j
forward transconductance VDS=25V; ID=30A - 40 - S total gate charge ID= 50 A; VDD=15V; VGS=5V;Figure 13 - 13.5 - nC gate-source charge - 7 - nC gate-drain (Miller) charge - 3.9 - nC input capacitance VGS=0V; VDS= 25 V; f = 1 MHz; Figure 11 - 1150 - pF output capacitance - 330 - pF reverse transfer capacitance - 180 - pF turn-on delay time VDD=15V; ID= 25 A; VGS=5V;
= 5.6 ; resistive load
R
rise time - 90 135 ns
G
- 1525ns
turn-off delay time - 25 40 ns fall time - 2540ns
source-drain (diode forward) voltage IS= 25 A; VGS=0V;Figure 12 - 0.95 1.2 V reverse recovery time IS= 10 A; dIS/dt = 100 A/µs; VGS=0V - 32 - ns recovered charge - 20 - nC
9397 750 09119
Product data Rev. 02 — 10 December 2001 5 of 14
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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