Philips PHD5N20E Datasheet
Philips Semiconductors Product specification
PowerMOS transistor PHD5N20E
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
field-effect power transistor in a
plastic envelope suitable for surface V
mounting featuring high avalanche I
energy capability, stable blocking P
voltage, fast switching and high R
thermalcyclingperformancewith low
DS
D
tot
DS(ON)
thermal resistance. Intended for use
in Switched Mode Power Supplies
(SMPS), motor control circuits and
general purpose switching
applications.
PINNING - SOT428 PIN CONFIGURATION SYMBOL
Drain-source voltage 200 V
Drain current (DC) 5.0 A
Total power dissipation 60 W
Drain-source on-state resistance 0.9 Ω
PIN DESCRIPTION
tab
d
1 gate
2 drain
g
3 source
tab drain
2
1
3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
D
I
DM
P
D
∆PD/∆TmbLinear derating factor Tmb > 25 ˚C - 0.4 W/K
V
GS
E
AS
I
AS
Tj, T
Continuous drain current Tmb = 25 ˚C; VGS = 10 V - 5 A
Tmb = 100 ˚C; VGS = 10 V - 3.5 A
Pulsed drain current Tmb = 25 ˚C - 20 A
Total dissipation Tmb = 25 ˚C - 60 W
Gate-source voltage - ± 30 V
Single pulse avalanche VDD ≤ 50 V; starting Tj = 25˚C; RGS = 50 Ω; - 40 mJ
energy VGS = 10 V
Peak avalanche current VDD ≤ 50 V; starting Tj = 25˚C; RGS = 50 Ω;- 5 A
VGS = 10 V
Operating junction and - 55 175 ˚C
stg
storage temperature range
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-mb
R
th j-a
October 1997 1 Rev 1.100
Thermal resistance junction to - 2.5 K/W
mounting base
Thermal resistance junction to pcb mounted, minimum 50 - K/W
ambient footprint
Philips Semiconductors Product specification
PowerMOS transistor PHD5N20E
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
∆V
(BR)DSS
∆T
j
R
DS(ON)
V
GS(TO)
g
fs
I
DSS
I
GSS
Q
g(tot)
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
d
L
s
C
iss
C
oss
C
rss
Drain-source breakdown VGS = 0 V; ID = 0.25 mA 200 - - V
voltage
/ Drain-source breakdown VDS = VGS; ID = 0.25 mA - 0.25 - V/K
voltage temperature coefficient
Drain-source on resistance VGS = 10 V; ID = 2.5 A - 0.68 0.9 Ω
Gate threshold voltage VDS = VGS; ID = 0.25 mA 2.0 3.0 4.0 V
Forward transconductance VDS = 50 V; ID = 2.5 A 1.5 3.5 - S
Drain-source leakage current VDS = 200 V; VGS = 0 V - 0.1 25 µA
VDS = 160 V; VGS = 0 V; Tj = 150 ˚C - 1 250 µA
Gate-source leakage current VGS = ±30 V; VDS = 0 V - 10 100 nA
Total gate charge ID = 4.8 A; V
Gate-source charge - 2 3 nC
= 160 V; VGS = 10 V - 11 15 nC
DD
Gate-drain (Miller) charge - 5.3 7 nC
Turn-on delay time VDD = 100 V; ID = 4.8 A; - 7 - ns
Turn-on rise time RG = 18 Ω; RD = 20 Ω -29-ns
Turn-off delay time - 27 - ns
Turn-off fall time - 22 - ns
Internal drain inductance Measured from tab to centre of die - 3.5 - nH
Internal source inductance Measured from source lead solder - 7.5 - nH
point to source bond pad
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 300 - pF
Output capacitance - 60 - pF
Feedback capacitance - 20 - pF
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous source current Tmb = 25˚C - - 5 A
(body diode)
Pulsed source current (body Tmb = 25˚C - - 20 A
diode)
Diode forward voltage IS = 5.2 A; VGS = 0 V - - 1.5 V
Reverse recovery time IS = 4.8 A; VGS = 0 V; - 114 - ns
dI/dt = 100 A/µs
Reverse recovery charge - 0.8 - µC
October 1997 2 Rev 1.100
Philips Semiconductors Product specification
PowerMOS transistor PHD5N20E
PD%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Normalised Power Derating
Tmb / C
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/P
ID%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Tmb / C
= f(Tmb)
D 25 ˚C
Normalised Current Derating
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/I
= f(Tmb); conditions: VGS ≥ 10 V
D 25 ˚C
1E+01
1E+00
Zth j-mb / (K/W)
0.5
BUKX52
0.2
0.1
1E-01
0.05
0.02
t
p
P
D
D =
0
1E-02
1E-07 1E-05 1E-03 1E-01 1E+01
t / s
T
Fig.4. Transient thermal impedance.
Z
= f(t); parameter D = tp/T
th j-mb
ID, Drain current (Amps)
10
Tj = 25 C
8
6
4
2
0
0 5 10 15 20 25 30
VDS, Drain-Source voltage (Volts)
10 V
7 V
VGS = 4.5 V
Fig.5. Typical output characteristics
ID = f(VDS); parameter V
GS
p
t
T
t
PHP5N20
6 V
5.5 V
5 V
.
ID, Drain current (Amps)
100
10
RDS(ON) = VDS/ID
1
0.1
1 10 100 1000
VDS, Drain-source voltage (Volts)
DC
Fig.3. Safe operating area. Tmb = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter t
PHP5N20E
tp = 10 us
100 us
1 ms
10 ms
100 ms
RDS(on), Drain-Source on resistance (Ohms)
3
2.5
2
1.5
1
0.5
Tj = 25 C
0
0246810
4.5 V
5 V
ID, Drain current (Amps)
5.5 V
Fig.6. Typical on-state resistance
R
p
= f(ID); parameter V
DS(ON)
PHP5N20
6 V
7 V
VGS = 10 V
.
GS
October 1997 3 Rev 1.100
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