Philips PHD3055E, PHP3055E Datasheet

Philips Semiconductors	Product specification
N-channel TrenchMOS™ transistor	PHP3055E, PHD3055E

FEATURES	SYMBOL			QUICK REFERENCE DATA
• 'Trench' technology		d		VDSS = 55 V
• Low on-state resistance
• Fast switching				ID = 10.3 A
		g		RDS(ON) ≤ 150 mΩ (VGS = 10 V)
		s

GENERAL DESCRIPTION

N-channel enhancement mode, field-effect power transistor in a plastic envelope using 'trench' technology.

Applications:-

•d.c. to d.c. converters

•switched mode power supplies

The PHP3055E is supplied in the SOT78 (TO220AB) conventional leaded package.

The PHD3055E is supplied in the SOT428 (DPAK) surface mounting package.

PINNING							SOT78 (TO220AB)		SOT428 (DPAK)
	PIN			DESCRIPTION					tab
							tab

1gate

2drain1

3source

			2
tab	drain	1	3
	1 2 3

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VDSS	Drain-source voltage	Tj = 25 ˚C to 175˚C	-	55	V
VDGR	Drain-gate voltage	Tj = 25 ˚C to 175˚C; RGS = 20 kΩ	-	55	V
VGS	Gate-source voltage		-	± 20	V
ID	Continuous drain current	Tmb = 25 ˚C	-	10.3	A
		Tmb = 100 ˚C	-	7.3	A
IDM	Pulsed drain current	Tmb = 25 ˚C	-	41	A
PD	Total power dissipation	Tmb = 25 ˚C	-	33	W
Tj, Tstg	Operating junction and		- 55	175	˚C
	storage temperature

1 It is not possible to make connection to pin:2 of the SOT428 package

August 1999

1

Rev 1.200

Philips Semiconductors	Product specification
N-channel TrenchMOS™ transistor	PHP3055E PHD3055E

AVALANCHE ENERGY LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
EAS	Non-repetitive avalanche	Unclamped inductive load, IAS = 3.3 A;	-	25	mJ
	energy	tp = 220 μs; Tj prior to avalanche = 25˚C;
		VDD ≤ 25 V; RGS = 50 Ω; VGS = 10 V; refer
IAS	Peak non-repetitive	to fig:15	-	10.3	A
	avalanche current

THERMAL RESISTANCES

SYMBOL	PARAMETER	CONDITIONS	TYP.	MAX.	UNIT
Rth j-mb	Thermal resistance junction		-	4.5	K/W
	to mounting base
Rth j-a	Thermal resistance junction	SOT78 package, in free air	60	-	K/W
	to ambient	SOT428 package, pcb mounted, minimum	50	-	K/W
		footprint

ELECTRICAL CHARACTERISTICS

Tj= 25˚C	unless otherwise specified
SYMBOL		PARAMETER	CONDITIONS		MIN.	TYP.	MAX.	UNIT
V(BR)DSS		Drain-source breakdown	VGS = 0 V; ID = 0.25 mA;		55	-	-	V
		voltage	Tj = -55˚C		50	-	-	V
VGS(TO)		Gate threshold voltage	VDS = VGS; ID = 1 mA		2.0	3.0	4.0	V
			Tj	= 175˚C	1.0	-	-	V
			Tj = -55˚C		-	-	6	V
RDS(ON)		Drain-source on-state	VGS = 10 V; ID = 5.5 A		-	120	150	mΩ
gfs		resistance	Tj	= 175˚C	-	250	315	mΩ
		Forward transconductance	VDS = 25 V; ID = 5.5 A		1.5	3.2	-	S
IGSS		Gate source leakage current	VGS = ±10 V; VDS = 0 V		-	10	100	nA
IDSS		Zero gate voltage drain	VDS = 55 V; VGS = 0 V;		-	0.05	10	μA
		current	Tj	= 175˚C	-	-	500	μA
Qg(tot)		Total gate charge	ID = 10 A; VDD = 44 V; VGS = 10 V		-	5.8	-	nC
Qgs		Gate-source charge			-	1.5	-	nC
Qgd		Gate-drain (Miller) charge			-	3.2	-	nC
td on		Turn-on delay time	VDD = 30 V; RD = 2.7 Ω;		-	3	10	ns
tr		Turn-on rise time	RG = 5.6 Ω; VGS = 10 V		-	26	35	ns
td off		Turn-off delay time	Resistive load		-	8	15	ns
tf		Turn-off fall time			-	10	20	ns
Ld		Internal drain inductance	Measured from tab to centre of die		-	3.5	-	nH
Ld		Internal drain inductance	Measured from drain lead to centre of die		-	4.5	-	nH
			(SOT78 package only)
Ls		Internal source inductance	Measured from source lead to source		-	7.5	-	nH
			bond pad
Ciss		Input capacitance	VGS = 0 V; VDS = 25 V; f = 1 MHz		-	190	250	pF
Coss		Output capacitance			-	55	80	pF
Crss		Feedback capacitance			-	40	50	pF

August 1999

2

Rev 1.200

Philips Semiconductors	Product specification
N-channel TrenchMOS™ transistor	PHP3055E PHD3055E

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tj = 25˚C unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS		MIN.	TYP.	MAX.	UNIT
IS	Continuous source current			-	-	10.3	A
	(body diode)
ISM	Pulsed source current (body			-	-	41	A
	diode)
VSD	Diode forward voltage	IF = 10	A; VGS = 0 V	-	1.1	1.5	V
trr	Reverse recovery time	IF = 10	A; -dIF/dt = 100 A/μs;	-	32	-	ns
Qrr	Reverse recovery charge	VGS = 0 V; VR = 30 V		-	50	-	nC

August 1999

3

Rev 1.200