Philips PHD3055E, PHP3055E Datasheet
Philips Semiconductors Product specification
N-channel TrenchMOS transistor PHP3055E, PHD3055E
FEATURES SYMBOL QUICK REFERENCE DATA
• ’Trench’ technology
• Low on-state resistance V
d
= 55 V
DSS
• Fast switching
ID = 10.3 A
g
R
s
≤ 150 mΩ (VGS = 10 V)
DS(ON)
GENERAL DESCRIPTION
N-channel enhancement mode, field-effect power transistor in a plastic envelope using ’trench’ technology.
Applications:-
• d.c. to d.c. converters
• switched mode power supplies
The PHP3055E is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHD3055E is supplied in the SOT428 (DPAK) surface mounting package.
PINNING SOT78 (TO220AB) SOT428 (DPAK)
PIN DESCRIPTION
1 gate
2 drain
1
tab
tab
3 source
tab drain
123
2
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DSS
V
DGR
V
GS
I
D
I
DM
P
D
Tj, T
1 It is not possible to make connection to pin:2 of the SOT428 package
Drain-source voltage Tj = 25 ˚C to 175˚C - 55 V
Drain-gate voltage Tj = 25 ˚C to 175˚C; RGS = 20 kΩ -55V
Gate-source voltage - ± 20 V
Continuous drain current Tmb = 25 ˚C - 10.3 A
Tmb = 100 ˚C - 7.3 A
Pulsed drain current Tmb = 25 ˚C - 41 A
Total power dissipation Tmb = 25 ˚C - 33 W
Operating junction and - 55 175 ˚C
stg
storage temperature
August 1999 1 Rev 1.200
Philips Semiconductors Product specification
N-channel TrenchMOS transistor PHP3055E PHD3055E
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
E
AS
I
AS
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-mb
R
th j-a
Non-repetitive avalanche Unclamped inductive load, IAS = 3.3 A; - 25 mJ
energy tp = 220 µs; Tj prior to avalanche = 25˚C;
VDD ≤ 25 V; RGS = 50 Ω; VGS = 10 V; refer
to fig:15
Peak non-repetitive - 10.3 A
avalanche current
Thermal resistance junction - 4.5 K/W
to mounting base
Thermal resistance junction SOT78 package, in free air 60 - K/W
to ambient SOT428 package, pcb mounted, minimum 50 - K/W
footprint
ELECTRICAL CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GS(TO)
R
DS(ON)
g
fs
I
GSS
I
DSS
Q
g(tot)
Q
gs
Q
gd
t
d on
t
r
t
d off
t
f
L
d
L
d
L
s
C
iss
C
oss
C
rss
Drain-source breakdown VGS = 0 V; ID = 0.25 mA; 55 - - V
voltage Tj = -55˚C 50 - - V
Gate threshold voltage VDS = VGS; ID = 1 mA 2.0 3.0 4.0 V
Tj = 175˚C 1.0 - - V
Tj = -55˚C - - 6 V
Drain-source on-state VGS = 10 V; ID = 5.5 A - 120 150 mΩ
resistance Tj = 175˚C - 250 315 mΩ
Forward transconductance VDS = 25 V; ID = 5.5 A 1.5 3.2 - S
Gate source leakage current VGS = ±10 V; VDS = 0 V - 10 100 nA
Zero gate voltage drain VDS = 55 V; VGS = 0 V; - 0.05 10 µA
current Tj = 175˚C - - 500 µA
Total gate charge ID = 10 A; V
= 44 V; VGS = 10 V - 5.8 - nC
DD
Gate-source charge - 1.5 - nC
Gate-drain (Miller) charge - 3.2 - nC
Turn-on delay time VDD = 30 V; RD = 2.7 Ω;-310ns
Turn-on rise time RG = 5.6 Ω; VGS = 10 V - 26 35 ns
Turn-off delay time Resistive load - 8 15 ns
Turn-off fall time - 10 20 ns
Internal drain inductance Measured from tab to centre of die - 3.5 - nH
Internal drain inductance Measured from drain lead to centre of die - 4.5 - nH
(SOT78 package only)
Internal source inductance Measured from source lead to source - 7.5 - nH
bond pad
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 190 250 pF
Output capacitance - 55 80 pF
Feedback capacitance - 40 50 pF
August 1999 2 Rev 1.200
Philips Semiconductors Product specification
N-channel TrenchMOS transistor PHP3055E PHD3055E
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous source current - - 10.3 A
(body diode)
Pulsed source current (body - - 41 A
diode)
Diode forward voltage IF = 10 A; VGS = 0 V - 1.1 1.5 V
Reverse recovery time IF = 10 A; -dIF/dt = 100 A/µs; - 32 - ns
Reverse recovery charge VGS = 0 V; VR = 30 V - 50 - nC
August 1999 3 Rev 1.200
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