Philips PHB11N06LT, PHD11N06LT Datasheet
Philips Semiconductors Product specification
TrenchMOS transistor PHB11N06LT, PHD11N06LT
Logic level FET
FEATURES SYMBOL QUICK REFERENCE DATA
• ’Trench’ technology V
d
= 55 V
DSS
• Very low on-state resistance
• Fast switching I
= 11 A
D
• Stable off-state characteristics
• High thermal cycling performance R
• Low thermal resistance
g
R
s
≤ 150 mΩ (VGS = 5 V)
DS(ON)
≤ 130 mΩ (VGS = 10 V)
DS(ON)
GENERAL DESCRIPTION
N-channelenhancementmode,logic level, field-effect power transistor in a plastic envelopeusing’trench’technology.
Thedevicehas very low on-stateresistance. It is intended foruse in dc to dc converters and general purpose switching
applications.
The PHB11N06LT is supplied in the SOT404 surface mounting package.
The PHD11N06LT is supplied in the SOT428 surface mounting package.
PINNING SOT428 SOT404
PIN DESCRIPTION
1 gate
2 drain
1
3 source
tab drain
tab
2
1
3
tab
2
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DSS
V
DGR
V
GS
I
D
I
DM
P
D
Tj, T
1 It is not possible to make contact to pin 2 of the SOT404 or SOT428 package
September 1998 1 Rev 1.000
Drain-source voltage Tj = 25 ˚C to 175˚C - 55 V
Drain-gate voltage Tj = 25 ˚C to 175˚C; RGS = 20 kΩ -55V
Gate-source voltage - ± 13 V
Continuous drain current Tmb = 25 ˚C - 11 A
Tmb = 100 ˚C - 7.6 A
Pulsed drain current Tmb = 25 ˚C - 44 A
Total power dissipation Tmb = 25 ˚C - 36 W
Operating junction and - 55 175 ˚C
stg
storage temperature
Philips Semiconductors Product specification
TrenchMOS transistor PHB11N06LT, PHD11N06LT
Logic level FET
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-mb
R
th j-a
ELECTRICAL CHARACTERISTICS
Tj= 25˚C unless otherwise specified
Electrostatic discharge Human body model (100 pF, 1.5 kΩ)-2kV
capacitor voltage, all pins
Thermal resistance junction - 4.17 K/W
to mounting base
Thermal resistance junction SOT78 package, in free air 60 - K/W
to ambient SOT428 and SOT404 package, pcb 50 - K/W
mounted, minimum footprint
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown VGS = 0 V; ID = 0.25 mA; 55 - - V
voltage Tj = -55˚C 50 - - V
V
(BR)GSS
Gate-source breakdown IG = ±1 mA; 10 - - V
voltage
V
GS(TO)
Gate threshold voltage VDS = VGS; ID = 1 mA 1.0 1.5 2.0 V
Tj = 175˚C 0.5 - - V
Tj = -55˚C - - 2.3 V
R
DS(ON)
Drain-source on-state VGS = 10 V; ID = 5.5 A - 100 130 mΩ
resistance VGS = 5 V; ID = 5.5 A - 120 150 mΩ
Tj = 175˚C - 250 315 mΩ
g
I
fs
GSS
Forward transconductance VDS = 25 V; ID = 5.5 A 4 10 - S
Gate source leakage current VGS = ±5 V; VDS = 0 V - 0.02 1 µA
Tj = 175˚C - - 20 µA
I
DSS
Zero gate voltage drain VDS = 55 V; VGS = 0 V; - 0.05 10 µA
current Tj = 175˚C - - 500 µA
Q
Q
Q
t
t
t
t
L
L
g(tot)
gs
gd
d on
r
d off
f
d
s
Total gate charge ID = 11 A; V
= 44 V; VGS = 5 V - 6.1 - nC
DD
Gate-source charge - 1.3 - nC
Gate-drain (Miller) charge - 3.2 - nC
Turn-on delay time VDD = 30 V; ID = 5 A; - 6 16 ns
Turn-on rise time VGS = 5 V; RG = 10 Ω -2335ns
Turn-off delay time Resistive load - 18 30 ns
Turn-off fall time - 18 30 ns
Internal drain inductance Measured from tab to centre of die - 3.5 - nH
Internal source inductance Measured from source lead to source - 7.5 - nH
bond pad
C
iss
C
oss
C
rss
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 250 330 pF
Output capacitance - 34 50 pF
Feedback capacitance - 35 50 pF
September 1998 2 Rev 1.000
Philips Semiconductors Product specification
TrenchMOS transistor PHB11N06LT, PHD11N06LT
Logic level FET
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
S
I
SM
V
SD
t
rr
Q
rr
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
W
DSS
Continuous source current - - 11 A
(body diode)
Pulsed source current (body - - 44 A
diode)
Diode forward voltage IF = 11 A; VGS = 0 V - 0.95 1.2 V
Reverse recovery time IF = 11 A; -dIF/dt = 100 A/µs; - 34 - ns
Reverse recovery charge VGS = 0 V; VR = 30 V - 57 - nC
Drain-source non-repetitive ID ≤ 10 A; VDD ≤ 25 V; VGS = 5 V; - 10 mJ
unclamped inductive turn-off RGS = 50 Ω; Tmb = 25 ˚C
energy
September 1998 3 Rev 1.000
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