Philips PHD10N10E Datasheet

Philips Semiconductors Product Specification

PowerMOS transistor PHD10N10E

GENERAL DESCRIPTION QUICK REFERENCE DATA

N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
field-effect power transistor in a
plastic envelope suuitable for V
surface mounting. The device is I
intended for use in Switched Mode P
Power Supplies (SMPS), motor T
control, welding, DC/DC and AC/DC R

DS

D

tot
j

DS(ON)

converters, and in general purpose
switching applications.

PINNING - SOT428 PIN CONFIGURATION SYMBOL

Drain-source voltage 100 V
Drain current (DC) 11 A
Total power dissipation 60 W
Junction temperature 175 ˚C
Drain-source on-state resistance 0.25 Ω

PIN DESCRIPTION

tab

d

1 gate
2 drain

g

3 source

tab drain

2

1

3

s

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
±V
I

D

I

D

I

DM

P
T
T

DS
DGR

GS

tot
stg
j

Drain-source voltage - - 100 V
Drain-gate voltage RGS = 20 kΩ - 100 V
Gate-source voltage - - 30 V
Drain current (DC) Tmb = 25 ˚C - 11 A
Drain current (DC) Tmb = 100 ˚C - 7.7 A
Drain current (pulse peak value) Tmb = 25 ˚C - 44 A
Total power dissipation Tmb = 25 ˚C - 60 W
Storage temperature - - 55 175 ˚C
Junction Temperature - - 175 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

R
R

th j-mb

th j-a

Thermal resistance junction to - 2.5 K/W
mounting base
Thermal resistance junction to pcb mounted, minimum 50 - K/W
ambient footprint

September 1997 1 Rev 1.000

Philips Semiconductors Product Specification

PowerMOS transistor PHD10N10E

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GS(TO)

I

DSS

I

DSS

I

GSS

R

DS(ON)

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

g

fs

C

iss

C

oss

C

rss

t

d on

t

r

t

d off

t

f

L

d

L

s

Drain-source breakdown VGS = 0 V; ID = 0.25 mA 100 - - V
voltage
Gate threshold voltage VDS = VGS; ID = 1 mA 2.1 3.0 4.0 V
Zero gate voltage drain current VDS = 100 V; VGS = 0 V; Tj = 25 ˚C - 1 10 µA
Zero gate voltage drain current VDS = 100 V; VGS = 0 V; Tj = 125 ˚C - 0.1 1.0 mA
Gate source leakage current VGS = ±30 V; VDS = 0 V - 10 100 nA
Drain-source on-state VGS = 10 V; ID = 5.5 A - 0.22 0.25 Ω
resistance

Forward transconductance VDS = 25 V; ID = 5.5 A 3 4.2 - S
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 400 500 pF

Output capacitance - 90 120 pF
Feedback capacitance - 35 50 pF

Turn-on delay time VDD = 30 V; ID = 3 A; - 9 14 ns
Turn-on rise time VGS = 10 V; RGS = 50 Ω; - 25 40 ns
Turn-off delay time R
Turn-off fall time - 20 40 ns

= 50 Ω - 3045ns

gen

Internal drain inductance Measured from tab to centre of die - 4.5 - nH
Internal source inductance Measured from source lead solder - 7.5 - nH

point to source bond pad

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

DR

I

DRM

V
t

rr

Q

SD

rr

Continuous reverse drain - - - 11 A
current
Pulsed reverse drain current - - - 44 A
Diode forward voltage IF = 11 A ; VGS = 0 V - 1.2 1.5 V

Reverse recovery time IF = 11 A; -dIF/dt = 100 A/µs; - 90 - ns
Reverse recovery charge VGS = 0 V; VR = 30 V - 0.35 - µC

AVALANCHE LIMITING VALUE

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

W

DSS

Drain-source non-repetitive ID = 11 A ; VDD ≤ 50 V ; - - 35 mJ
unclamped inductive turn-off VGS = 10 V ; RGS = 50 Ω
energy

September 1997 2 Rev 1.000

Philips Semiconductors Product Specification

PowerMOS transistor PHD10N10E

PD%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140 160 180

Normalised Power Derating

Tmb / C

Fig.1. Normalised power dissipation.

PD% = 100⋅PD/P

ID%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140 160 180

Tmb / C

= f(Tmb)

D 25 ˚C

Normalised Current Derating

Fig.2. Normalised continuous drain current.

ID% = 100⋅ID/I

= f(Tmb); conditions: VGS ≥ 10 V

D 25 ˚C

1E+01

1E+00

Zth j-mb / (K/W)

0.5

BUKX52

0.2

0.1

1E-01

0.05

0.02

p

D =

t

T

t

p

P

D

0

t

1E-02

1E-07 1E-05 1E-03 1E-01 1E+01

t / s

T

Fig.4. Transient thermal impedance.

Z

= f(t); parameter D = tp/T

th j-mb

ID / A

20

VGS / V =

15

10

5

0

0 2 4 6 8 10

20

15

10

VDS / V

BUK452-100A

8

7

6

5

4

Fig.5. Typical output characteristics, Tj = 25 ˚C

ID = f(VDS); parameter V

GS

.

7

VGS / V =

7.5

BUK452-100A

8

10

20

.

GS

ID / A

100

10

1

0.1

RDS(ON) = VDS/ID

DC

1 100

10

VDS / V

A

B

BUK452-100

tp = 10 us

100 us

1 ms
10 ms

100 ms

Fig.3. Safe operating area. Tmb = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter t

RDS(ON) / Ohm

1.0

4.5 5 5.5 6

0.8

0.6

0.4

0.2

0

0 2 4 6 8 10 12 14 16 18 20

6.5

ID / A

Fig.6. Typical on-state resistance, Tj = 25 ˚C

R

p

= f(ID); parameter V

DS(ON)

September 1997 3 Rev 1.000