Philips PHB9NQ20T, PHD9NQ20T, PHP9NQ20T Datasheet

Philips Semiconductors Product specification

N-channel TrenchMOS™ transistor			PHP9NQ20T, PHB9NQ20T
				PHD9NQ20T
FEATURES	SYMBOL			QUICK REFERENCE DATA
• 'Trench' technology
		d		VDSS = 200 V
• Low on-state resistance
• Fast switching				ID = 8.7 A
• Low thermal resistance
	g			RDS(ON) ≤ 400 mΩ
		s

GENERAL DESCRIPTION

N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications.

The PHP9NQ20T is supplied in the SOT78 (TO220AB) conventional leaded package

The PHB9NQ20T is supplied in the SOT404 (D2PAK) surface mounting package

The PHD9NQ20T is supplied in the SOT428 (DPAK) surface mounting package

PINNING

SOT78 (TO220AB) SOT404 (D2PAK)

SOT428 (DPAK)

PIN DESCRIPTION

tab

1gate

2drain 1

3source

1 2 3

tab drain

	tab		tab
	2		2
1	3	1	3

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VDSS	Drain-source voltage	Tj = 25 ˚C to 175˚C	-	200	V
VDGR	Drain-gate voltage	Tj = 25 ˚C to 175˚C; RGS = 20 kΩ	-	200	V
VGS	Gate-source voltage		-	± 20	V
ID	Continuous drain current	Tmb = 25 ˚C; VGS = 10 V	-	8.7	A
		Tmb = 100 ˚C; VGS = 10 V	-	6.2	A
IDM	Pulsed drain current	Tmb = 25 ˚C	-	35	A
PD	Total power dissipation	Tmb = 25 ˚C	-	88	W
Tj, Tstg	Operating junction and		- 55	175	˚C
	storage temperature

1 It is not possible to make connection to pin:2 of the SOT404 or SOT428 packages.

August 1999

1

Rev 1.100

Philips Semiconductors	Product specification
TrenchMOS™ transistor	PHP9NQ20T, PHB9NQ20T

AVALANCHE ENERGY LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
EAS	Non-repetitive avalanche	Unclamped inductive load, IAS = 7.2A;	-	93	mJ
	energy	tp = 100 μs; Tj prior to avalanche = 25˚C;
		VDD ≤ 25 V; RGS = 50 Ω; VGS = 10 V; refer
IAS	Peak non-repetitive	to fig;15	-	8.7	A
	avalanche current

THERMAL RESISTANCES

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
Rth j-mb	Thermal resistance junction		-	-	1.7	K/W
	to mounting base
Rth j-a	Thermal resistance junction	SOT78 package, in free air	-	60	-	K/W
	to ambient	SOT404 & SOT428 packages, pcb	-	50	-	K/W
		mounted, minimum footprint

ELECTRICAL CHARACTERISTICS

Tj= 25˚C	unless otherwise specified
SYMBOL		PARAMETER	CONDITIONS		MIN.	TYP.	MAX.	UNIT
V(BR)DSS		Drain-source breakdown	VGS = 0 V; ID = 0.25 mA;		200	-	-	V
		voltage	Tj = -55˚C		178	-	-	V
VGS(TO)		Gate threshold voltage	VDS = VGS; ID = 1 mA		2	3	4	V
			Tj	= 175˚C	1	-	-	V
			Tj = -55˚C		-		6	V
RDS(ON)		Drain-source on-state	VGS = 10 V; ID = 4.5 A		-	300	400	mΩ
gfs		resistance	Tj	= 175˚C	-	-	1.16	Ω
		Forward transconductance	VDS = 25 V; ID = 4.5 A		3.8	6	-	S
IGSS		Gate source leakage current	VGS = ± 10 V; VDS = 0 V		-	10	100	nA
IDSS		Zero gate voltage drain	VDS = 200 V; VGS = 0 V		-	0.05	10	μA
		current	Tj	= 175˚C	-	-	500	μA
Qg(tot)		Total gate charge	ID = 9 A; VDD = 160 V; VGS = 10 V		-	24	-	nC
Qgs		Gate-source charge			-	4	-	nC
Qgd		Gate-drain (Miller) charge			-	12	-	nC
td on		Turn-on delay time	VDD = 100 V; RD = 10 Ω;		-	8	-	ns
tr		Turn-on rise time	VGS = 10 V; RG = 5.6 Ω		-	19	-	ns
td off		Turn-off delay time	Resistive load		-	25	-	ns
tf		Turn-off fall time			-	15	-	ns
Ld		Internal drain inductance	Measured tab to centre of die		-	3.5	-	nH
Ld		Internal drain inductance	Measured from drain lead to centre of die		-	4.5	-	nH
			(SOT78 package only)
Ls		Internal source inductance	Measured from source lead to source		-	7.5	-	nH
			bond pad
Ciss		Input capacitance	VGS = 0 V; VDS = 25 V; f = 1 MHz		-	959	-	pF
Coss		Output capacitance			-	93	-	pF
Crss		Feedback capacitance			-	54	-	pF

August 1999

2

Rev 1.100

Philips Semiconductors	Product specification
TrenchMOS™ transistor	PHP9NQ20T, PHB9NQ20T

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tj = 25˚C unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS		MIN.	TYP.	MAX.	UNIT
IS	Continuous source current			-	-	9	A
	(body diode)
ISM	Pulsed source current (body			-	-	36	A
	diode)
VSD	Diode forward voltage	IF = 9	A; VGS = 0 V	-	0.85	1.2	V
trr	Reverse recovery time	IF = 9	A; -dIF/dt = 100 A/μs;	-	92	-	ns
Qrr	Reverse recovery charge	VGS = -10 V; VR = 25 V		-	0.5	-	μC

August 1999

3

Rev 1.100

Philips Semiconductors	Product specification
TrenchMOS™ transistor	PHP9NQ20T, PHB9NQ20T

100	Normalised Power Derating, PD (%)
90
80
70
60
50
40
30
20
10
0
0	25	50	75	100	125	150	175
		Mounting Base temperature, Tmb (C)
	Fig.1.	Normalised power dissipation.
	PD% = 100×PD/PD 25 ˚C = f(Tmb)

Transient thermal impedance, Zth j-mb (K/W)

10

1	D = 0.5
	0.2
	0.1
0.1	0.05				P	tp	D = tp/T
					D
	0.02
	single pulse					T
0.01
1E-06		1E-05	1E-04	1E-03	1E-02	1E-01		1E+00
			Pulse width, tp (s)

Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T

Normalised Current Derating, ID (%)

100

90

80

70

60

50

40

30

20

10

0

0	25	50	75	100	125	150	175
		Mounting Base temperature, Tmb (C)

Fig.2. Normalised continuous drain current.
	ID% = 100×ID/ID 25 ˚C = f(Tmb); VGS ³ 10 V
100	Peak Pulsed Drain Current, IDM (A)
	RDS(on) = VDS/ ID
10		tp = 10 us
		100 us
1	D.C.	1 ms
		10 ms
		100 ms
0.1

1	10	100	1000
Drain-Source Voltage, VDS (V)
Fig.3.	Safe operating area

ID & IDM = f(VDS); IDM single pulse; parameter tp

Drain Current, ID (A)

10

Tj = 25 C						VGS = 10V			6 V
9						8 V
8
									5.5 V
7
6
5
4									5 V
3
2									4.5 V
1
0
0	0.2	0.4	0.6	0.8	1	1.2	1.4	1.6	1.8	2
			Drain-Source Voltage, VDS (V)
Fig.5. Typical output characteristics, Tj = 25 ˚C.
				ID = f(VDS)
Drain-Source On Resistance, RDS(on) (Ohms)
0.5				5 V
0.45		4.5 V						Tj = 25 C
0.4
0.35
0.3							5.5 V
0.25									6 V
0.2
0.15							8 V	VGS = 10V
0.1
0.05
0
0	1	2	3	4	5	6	7	8	9	10
			Drain Current, ID (A)
Fig.6.		Typical on-state resistance, Tj							= 25 ˚C.
				RDS(ON) = f(ID)

August 1999

4

Rev 1.100