PHB7N60E
Philips Semiconductors Product specification
PowerMOS transistors PHP7N60E, PHB7N60E, PHW7N60E
Avalanche energy rated
FEATURES SYMBOL QUICK REFERENCE DATA
• Repetitive Avalanche Rated
• Fast switching V
DSS
= 600 V
• Stable off-state characteristics
• High thermal cycling performance I
D
= 7 A
• Low thermal resistance
R
DS(ON)
≤ 1.2 Ω
GENERAL DESCRIPTION
N-channel,enhancementmodefield-effect power transistor, intendedforusein off-line switched mode powersupplies,
T.V.andcomputer monitor powersupplies, d.c. to d.c.converters, motor controlcircuitsand general purpose switching
applications.
The PHP7N60E is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHW7N60E is supplied in the SOT429 (TO247) conventional leaded package.
The PHB7N60E is supplied in the SOT404 surface mounting package.
PINNING SOT78 (TO220AB) SOT404 SOT429 (TO247)
PIN DESCRIPTION
1 gate
2 drain
1
3 source
tab drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DSS
Drain-source voltage T
j
= 25 ˚C to 150˚C - 600 V
V
DGR
Drain-gate voltage T
j
= 25 ˚C to 150˚C; R
GS
= 20 kΩ - 600 V
V
GS
Gate-source voltage - ± 30 V
I
D
Continuous drain current T
mb
= 25 ˚C; V
GS
= 10 V - 7 A
T
mb
= 100 ˚C; V
GS
= 10 V - 4.5 A
I
DM
Pulsed drain current T
mb
= 25 ˚C - 28 A
P
D
Total dissipation T
mb
= 25 ˚C - 147 W
T
j
, T
stg
Operating junction and - 55 150 ˚C
storage temperature range
d
g
s
123
tab
13
tab
2
2
3
1
1 It is not possible to make connection to pin 2 of the SOT404 package.
December 1998 1 Rev 1.400
Philips Semiconductors Product specification
PowerMOS transistors PHP7N60E, PHB7N60E, PHW7N60E
Avalanche energy rated
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
E
AS
Non-repetitive avalanche Unclamped inductive load, I
AS
= 6.5 A; - 583 mJ
energy t
p
= 0.23 ms; T
j
prior to avalanche = 25˚C;
V
DD
≤ 50 V; R
GS
= 50 Ω; V
GS
= 10 V; refer
to fig:17
E
AR
Repetitive avalanche energy
2
I
AR
= 7 A; t
p
= 2.5 µs; T
j
prior to - 13 mJ
avalanche = 25˚C; R
GS
= 50 Ω; V
GS
= 10 V;
refer to fig:18
I
AS
, I
AR
Repetitive and non-repetitive - 7 A
avalanche current
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction - - 0.85 K/W
to mounting base
R
th j-a
Thermal resistance junction SOT78 package, in free air - 60 - K/W
to ambient SOT429 package, in free air - 45 - K/W
SOT404 package, pcb mounted, minimum - 50 - K/W
footprint
2 pulse width and repetition rate limited by T
j
max.
December 1998 2 Rev 1.400
Philips Semiconductors Product specification
PowerMOS transistors PHP7N60E, PHB7N60E, PHW7N60E
Avalanche energy rated
ELECTRICAL CHARACTERISTICS
T
j
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown V
GS
= 0 V; I
D
= 0.25 mA 600 - - V
voltage
∆V
(BR)DSS
/ Drain-source breakdown V
DS
= V
GS
; I
D
= 0.25 mA - 0.1 - %/K
∆T
j
voltage temperature
coefficient
R
DS(ON)
Drain-source on resistance V
GS
= 10 V; I
D
= 3.5 A - 0.9 1.2 Ω
V
GS(TO)
Gate threshold voltage V
DS
= V
GS
; I
D
= 0.25 mA 2.0 3.0 4.0 V
g
fs
Forward transconductance V
DS
= 30 V; I
D
= 3.5 A 3 4.5 - S
I
DSS
Drain-source leakage current V
DS
= 600 V; V
GS
= 0 V - 2 100 µA
V
DS
= 480 V; V
GS
= 0 V; T
j
= 125 ˚C - 50 500 µA
I
GSS
Gate-source leakage current V
GS
= ±30 V; V
DS
= 0 V - 10 200 nA
Q
g(tot)
Total gate charge I
D
= 7 A; V
DD
= 480 V; V
GS
= 10 V - 54 80 nC
Q
gs
Gate-source charge - 5.5 7 nC
Q
gd
Gate-drain (Miller) charge - 30 45 nC
t
d(on)
Turn-on delay time V
DD
= 300 V; R
D
= 39 Ω; - 17 - ns
t
r
Turn-on rise time R
G
= 9.1 Ω -31-ns
t
d(off)
Turn-off delay time - 88 - ns
t
f
Turn-off fall time - 34 - ns
L
d
Internal drain inductance Measured from tab to centre of die - 3.5 - nH
L
d
Internal drain inductance Measured from drain lead to centre of die - 4.5 - nH
(SOT78 and SOT429 packages only)
L
s
Internal source inductance Measured from source lead to source - 7.5 - nH
bond pad
C
iss
Input capacitance V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz - 930 - pF
C
oss
Output capacitance - 120 - pF
C
rss
Feedback capacitance - 70 - pF
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
T
j
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
S
Continuous source current T
mb
= 25˚C - - 7 A
(body diode)
I
SM
Pulsed source current (body T
mb
= 25˚C - - 28 A
diode)
V
SD
Diode forward voltage I
S
= 7 A; V
GS
= 0 V - - 1.2 V
t
rr
Reverse recovery time I
S
= 7 A; V
GS
= 0 V; dI/dt = 100 A/µs - 530 - ns
Q
rr
Reverse recovery charge - 6.7 - µC
December 1998 3 Rev 1.400
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