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PHB78NQ03LT
Datasheet
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Philips PHB78NQ03LT, PHD78NQ03LT, PHP78NQ03LT Datasheet

1. Product profile

1.1 Description

1.2 Features

PHP/PHB/PHD78NQ03LT
N-channel enhancement mode field-effect transistor
Rev. 01 — 14 November 2001 Product data
N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology.
Product availability:
■ Low on-state resistance ■ Fast switching

1.3 Applications

■ Computer motherboards ■ DC to DC converters

1.4 Quick reference data

■ VDS = 25 V ■ ID = 75 A (T
■ P
= 93 W (T
tot
=25°C) ■ R
mb
= 9 mΩ (T
DSon
mb
=25°C)
=25°C)
j

2. Pinning information

Table 1: Pinning - SOT78, SOT404, SOT428 simplified outlines and symbol
Pin Description Simplified outline Symbol
1 gate (g) 2 drain (d) 3 source (s) mb mounting base,
connected to drain (d)
[1]
MBK106
12mb3
SOT78 (TO-220AB) SOT404 (D
mb
2
13
2
-PAK)
MBK116
mb
2
13
Top view
MBK091
SOT428 (D-PAK)
MBB076
d
g
s
[1] It is not possible to make connection to pin 2 of the SOT404 or SOT428 packages.
Philips Semiconductors
PHP/PHB/PHD78NQ03LT
N-channel enhancement mode field-effect transistor

3. Limiting values

Table 2: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
V
DGR
V
GS
V
GSM
I
D
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
I
SM
drain-source voltage (DC) Tj=25to175°C - 25 V drain-gate voltage (DC) Tj=25to175°C; RGS=20kΩ -25V gate-source voltage (DC) - ±15 V gate-source voltage tp≤ 50 µs; pulsed;
duty cycle 25 %; T
≤ 150 °C
j
- ±20 V
drain current (DC) Tmb=25°C; VGS=5V;Figure 2 and 3 -61A
= 100 °C; VGS=5V;Figure 2 -43A
T
mb
=25°C; VGS=10V - 75 A
T
mb
= 100 °C; VGS=10V - 53 A
T
mb
peak drain current Tmb=25°C; pulsed; tp≤ 10 µs; Figure 3 - 228 A total power dissipation Tmb=25°C; Figure 1 -93W storage temperature −55 +175 °C operating junction temperature −55 +175 °C
source (diode forward) current (DC) Tmb=25°C - 75 A peak source (diode forward) current Tmb=25°C; pulsed; tp≤ 10 µs - 228 A
9397 750 08916
Product data Rev. 01 — 14 November 2001 2 of 14
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Philips Semiconductors
PHP/PHB/PHD78NQ03LT
N-channel enhancement mode field-effect transistor
120
P
der
(%)
80
40
0
0 50 100 150 200
P
tot
P
der
-----------------------
P
tot 25 C°()
100%×= I
03aa16
(oC)
T
mb
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
120
I
der
(%)
80
40
0
0 50 100 150 200
I
D
der
-------------------
I
D25C
()
100%×=
°
03aa24
(oC)
T
mb
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
3
10
I
D
(A)
2
10
10
1
1 10 10
R
DSon
= VDS / I
D
DC
tp = 10 µs
100 µs
1 ms
10 ms
100 ms
03aaa175
VDS (V)
Tmb=25°C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
2
9397 750 08916
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data Rev. 01 — 14 November 2001 3 of 14
Philips Semiconductors
PHP/PHB/PHD78NQ03LT
N-channel enhancement mode field-effect transistor

4. Thermal characteristics

Table 3: Thermal characteristics
Symbol Parameter Conditions Value Unit
R
th(j-mb)
R
th(j-a)
thermal resistance from junction to mounting base
thermal resistance from junction to ambient vertical in still air; SOT78 package 60 K/W

4.1 Transient thermal impedance

Figure 4 1.6 K/W
mounted on a printed circuit board; minimum
50 K/W
footprint; SOT404 and SOT428 packages
10
Z
th(j-mb)
(K/W)
1
δ = 0.5
0.2
0.1
-1
10
10
0.05
0.02
single pulse
-2 10
-5
10
-4
10
-3
10
-2
10
-1
P
1 10
δ =
t
p
T
(s)
t
p
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
03ag18
t
p
T
t
9397 750 08916
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data Rev. 01 — 14 November 2001 4 of 14
Philips Semiconductors
PHP/PHB/PHD78NQ03LT
N-channel enhancement mode field-effect transistor

5. Characteristics

Table 4: Characteristics
Tj=25°C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DSon
Dynamic characteristics
g
fs
Q
g(tot)
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Source-drain diode
V
SD
t
rr
Q
rr
drain-source breakdown voltage ID= 0.25 mA; VGS=0V
=25°C 25--V
T
j
= −55 °C 22--V
T
j
gate-source threshold voltage ID= 1 mA; VDS=VGS; Figure 9
=25°C 1 1.5 2 V
T
j
= 175 °C 0.5 - - V
T
j
= −55 °C - - 2.3 V
T
j
drain-source leakage current VDS=25V; VGS=0V
=25°C - 0.05 10 µA
T
j
= 175 °C - - 500 µA
T
j
gate-source leakage current VGS= ±15 V; VDS= 0 V - 10 100 nA drain-source on-state resistance VGS=5V; ID=25A;Figure 7 and 8
=25°C - 11.5 13.5 mΩ
T
j
= 175 °C - 20.7 24.3 mΩ
T
j
= 10 V; ID=25A;
V
GS
=25°C - 7.65 9 mΩ
T
j
forward transconductance VDS=25V; ID=50A - 34 - S total gate charge ID= 50 A; VDD=15V; VGS=5V;Figure 13 -13-nC gate-source charge - 4.8 - nC gate-drain (Miller) charge - 4.2 5.6 nC input capacitance VGS=0V; VDS= 25 V; f = 1 MHz; Figure 11 - 1074 - pF output capacitance - 389 - pF reverse transfer capacitance - 156 - pF turn-on delay time VDD=15V; ID= 25 A; VGS=10V;
= 5.6 Ω; resistive load
R
turn-on rise time - 92 130 ns
G
- 2033ns
turn-off delay time - 30 48 ns turn-off fall time - 4060ns
source-drain (diode forward) voltage IS= 25 A; VGS=0V;Figure 12 - 0.95 1.2 V reverse recovery time IS= 20 A; dIS/dt = −100 A/µs; VDS=25V - 40 - ns recovered charge - 32 - nC
9397 750 08916
Product data Rev. 01 — 14 November 2001 5 of 14
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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